NPN SILICON HI FREQUNCY TRANSISTOR

www.DataSheet4U.com NE56787 NPN SILICON HI FREQUNCY TRANSISTOR DESCRIPTION: The ASI NE56787 is Designed for general purpose and ultra linear small signal amplifier applications up to 4.0 GHz. PACKAGE STYLE .100 2L FEATURES INCLUDE: • Ideal for linear Class-A amplifiers MAXIMUM RATINGS: IC VCBO VCEO VEBO PDISS TJ TSTG θJC 60 mA 25 V 12 V 2.0 V 600 mW @ TA ≤ 75 °C -65 °C to +200 °C -65 °C to +200 °C 40 °C/W CHARACTERISTICS SYMBOL ICBO IEBO hFE COB fs VCB = 10 V TC = 25 °C TEST CONDITIONS VEB = 1.0 V VCE = 10 V VCB = 10 V S21  = 0 dB 2 MINIMUM TYPICAL MAXIMUM 1.0 1.0 UNITS µA µA --pF GHz IC = 30 mA f = 1.0 MHz 30 100 0.44 200 0.80 7.5 8.0 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1