InGaP HBT Gain Block

C O N F I D E N T I A L MWS11-GB11-xx InGaP HBT Gain Block A M I C R O S E M I C O M P A N Y P REVIEW
 This general purpose amplifier is a low cost, broadband RFIC manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process (MOCVD). This RFIC amplifier was designed as an easily cascadable 50 ohm gain block. The device is self-contained with 50 ohm input and output impedance. Applications include IF and RF amplification in wireless/ wired voice and data communication products and broadband test equipment operating up to 6 GHz. This RFIC amplifier is initially available in a plastic SOT-89 3-Pin package to handle P1dB output power up to 19dBm (5V). The same RFIC will be available later in an advanced Microsemi Gigamite™ package, with significantly smaller footprint for applications where board space is at a premium.




  Advanced InGaP HBT DC to 6GHz Single +5V Supply Small Signal Gain = 16dB P1dB = 19dBm (5V), f=1GHz
SOT-89 3-Pin, & Gigamite Packages W W W . Microsemi . COM       
Broadband Gain Blocks
IF or RF buffer Amplifiers
Driver Stage for Power Amps
Final Power Amp for Low to IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Medium Power Applications
Broadband Test Equipment 
  45 Gain (dB), Pout (dBm), Current (A)00 40 35 30 25 20 15 10 5 0 -5 -1 0 -2 0 -1 5 -1 0 -5 0 5 P in (d B m ) 10 15 P out G a in C u rre n t f = 5 .7 G H z Vcc = 5 V N o m in a l C u r r e n t 20 m A MWS11-GB11 MWS11-GB11
     PK Plastic SOT-89 3 Pin Gigamite MWS11GB11-G1 MWS11GB11-S1 Note: Available in Tape & Reel. Append the letter “T” to the part number. (i.e. MSW11GB11-S89T) Copyright © 2000 Rev. 0.2,2000-12-15 Microsemi 11861 Western Avenue, Garden Grove, CA. 92841. Tel: (714) 898-8121 Page 1 C O N F I D E N T I A L MWS11-GB11-xx InGaP HBT Gain Block A M I C R O S E M I C O M P A N Y P REVIEW       DC Supply Voltage..................................................................................................5.0 Vdc Absolute Max. Limit...................................................................................................60mA RF Input Power (Pin)...............................................................................................10 dBm Operating Case Temperature ..........................................................................-40º to +85ºC Storage Temperature.....................................................................................-60º to +150ºC Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal.    T a b is GND W W W . Microsemi . COM 1 2 3 R F IN GND RF OUT/ B IA S 
 Plastic SOT-89 3-Pin THERMAL RESISTANCE-JUNCTION TO AMBIENT, θJA THERMAL RESISTANCE-JUNCTION TO CASE, θJC THERMAL RESISTANCE-JUNCTION TO LEAD, θJT Gigamite θJA THERMAL RESISTANCE-JUNCTION TO CASE, θJC THERMAL RESISTANCE-JUNCTION TO LEAD, θJT THERMAL RESISTANCE-JUNCTION TO AMBIENT, XX°C/W XX°C/W XX°C/W PK PACKAGE (Top View) PK XX°C/W 149°C/W XX°C/W Junction Temperature Calculation: TJ = TA + (PD x θJA). The θJA numbers are guidelines for the thermal performance of the device/pc-board system. All of the above assume no ambient airflow. 
     
 


 RF IN GND RF Input pin. A DC blocking capacitor should be used in most applications. Ground connection. Traces should be minimized and connect immediately to ground. RF output and bias pin. In the bias network, a resistor is selected to set the DC current into this pin as: RF OUT / BIAS R= (VCC − VD ) ICC PACKAGE DATA PACKAGE DATA Note that maximum current limit ICC must not be exceeded and a resistor should always be used. A DC blocking capacitor should also be used. Copyright © 2000 Rev. 0.2,2000-12-15 Microsemi 11861 Western Avenue, Garden Grove, CA. 92841. Tel: (714) 898-8121 Page 2 C O N F I D E N T I A L MWS11-GB11-xx InGaP HBT Gain Block A M I C R O S E M I C O M P A N Y P REVIEW Unless otherwise specified, the following specifications apply over the operating ambient temperature -40°C ≤ TA ≤ +85°C except where otherwise noted. Test conditions: [Enter Test Conditions Here] Parameter Symbol Test Conditions MWS11-GB11-xx Min Typ Max DC 16 34 f=1 GHz f=1.5 GHz 13 3.3 16 4 5 60 6 19 Units    W W W . Microsemi . COM
POWER SUPPLY Application Frequency Range Linear Output Power rd Output 3 Order Intermod Product* Small-Signal Gain Noise Figure Supply Voltage Supply Current f P1dB IP3 G NF VCC f=2GHz GHz dBm dBm dB dB V mA 3.5 4.6 20 DC to >6000 5.5 11.3 11.3 11.4 11.5 11.5 9.9 0.05 7.6 <1.8:1 <2.5:1 <1.8:1 <2.5:1 34.5 18.5 16.5
OVERALL Frequency Range 1dB Bandwidth T=25°C, VD=5.5V, ICC=70mA Freq = 100MHz Freq = 1000MHz Freq = 2000MHz Freq = 3000MHz Freq = 4000MHz Freq = 6000MHz 100MHz to 2000MHz Freq = 1000MHz
        
        
        
         MHz GHz dB dB dB dB dB dB dB dB Gain 10.2 Gain Flatness Noise Figure Input VSWR Output VSWR Output IP3 Output P1dB Reverse Isolation Freq = 1000MHz Freq = 1000MHz Freq = 1000MHz dBm dBm dB
THERMAL Maximum Measured Junction Temp at DC Bias Conditions TA = +85°C 142 1.4x10 5 3.4x10 9 1.8x10 3 °C Years † Years † Years † TA = +85°C Mean Time Between Failures TA = +25°C TA = -40°C * Output power at 1dB gain compression point, f=1 GHz † ELECTRICALS ELECTRICALS In accordance with Manufacturer design Copyright © 2000 Rev. 0.2,2000-12-15 Microsemi 11861 Western Avenue, Garden Grove, CA. 92841. Tel: (714) 898-8121 Page 3 C O N F I D E N T I A L MWS11-GB11-xx InGaP HBT Gain Block A M I C R O S E M I C O M P A N Y P REVIEW   
     W W W . Microsemi . COM  
   Vcc 20 Ω 0.01 pF 1.0 µ F 1 2 3 220 nH 150 pF RF IN 50 Ω µ strip 150 pF RF OUT 50 Ω µ strip Vd      Vcc 1.0 µ F 0.01µ F 20 Ω 100 pF 1 2 3 TL,
/4 150 pF RF IN 50 Ω µ strip 150 pF RF OUT APPLICATION APPLICATION Vd 50 Ω µ strip Copyright © 2000 Rev. 0.2,2000-12-15 Microsemi 11861 Western Avenue, Garden Grove, CA. 92841. Tel: (714) 898-8121 Page 4 C O N F I D E N T I A L MWS11-GB11-xx InGaP HBT Gain Block A M I C R O S E M I C O M P A N Y P REVIEW
   W W W . Microsemi . COM PK A K I 3-Pin Plastic TO-89 D Dim A B C D E F G H I J K Note: B J H F E G C MILLIMETERS MIN MAX 4.30 4.70 2.30 2.70 1.30 1.70 0.35 0.45 0.35 0.50 0.30 0.50 1.50 BSC 0.40 0.60 0.50 0.50 3.90 4.30 1.55 1.75 INCHES MIN MAX 0.169 0.185 0.090 0.106 0.051 0.066 0.013 0.017 0.013 0.019 0.011 0.019 0.059 BSC 0.015 0.023 0.019 0.019 0.153 0.169 0.061 0.068 1. Dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006”) on any side. Lead dimension shall not include solder coverage. MECHANICALS MECHANICALS Copyright © 2000 Rev. 0.2,2000-12-15 Microsemi 11861 Western Avenue, Garden Grove, CA. 92841. Tel: (714) 898-8121 Page 5 C O N F I D E N T I A L MWS11-GB11-xx InGaP HBT Gain Block A M I C R O S E M I C O M P A N Y P REVIEW  W W W . Microsemi . COM NOTES NOTES PRODUCT PREVIEW DATA – Information contained in this document is pre-production data, and is proprietary to Microsemi. It may not be modified in any way without the express written consent of Microsemi. Product referred to herein is not guaranteed to achieve preliminary or production status and product specifications, configurations, and availability may change at any time. Copyright © 2000 Rev. 0.2,2000-12-15 Microsemi 11861 Western Avenue, Garden Grove, CA. 92841. Tel: (714) 898-8121 Page 6