RF LDMOS Wideband Integrated Power Amplifiers

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MW6IC2015N Rev. 2, 2/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage (26 to 32 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband on - chip design makes it usable from 1805 to 1990 MHz. The linearity performances cover all modulation formats for cellular applications: GSM, GSM EDGE, PHS, TDMA, CDMA, W - CDMA and TD - SCDMA. Final Application • Typical Two - Tone Performance: VDD = 26 Volts, IDQ1 = 100 mA, IDQ2 = 170 mA, Pout = 15 Watts PEP, Full Frequency Band (1805 - 1880 MHz or 1930 - 1990 MHz) Power Gain — 26 dB Power Added Efficiency — 28% IMD — - 30 dBc Driver Application • Typical GSM EDGE Performance: VDD = 26 Volts, IDQ1 = 130 mA, IDQ2 = 170 mA, Pout = 3 Watts Avg., Full Frequency Band (1805 - 1880 MHz or 1930 - 1990 MHz) Power Gain — 27 dB Power Added Efficiency — 19% Spectral Regrowth @ 400 kHz Offset = - 69 dBc Spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM — 0.8% rms • Capable of Handling 3:1 VSWR, @ 26 Vdc, 1990 MHz, 15 Watts CW Output Power • Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 8 W CW Pout. Features • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source Scattering Parameters • On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • 200°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel MW6IC2015NBR1 MW6IC2015GNBR1 1805 - 1990 MHz, 15 W, 26 V GSM/GSM EDGE, CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MW6IC2015NBR1 CASE 1329A - 03 TO - 272 WB - 16 GULL PLASTIC MW6IC2015GNBR1 VDS1 RFin RFout/VDS2 GND VDS1 NC NC NC RFin NC VGS1 VGS2 NC GND 1 2 3 4 5 6 7 8 9 10 11 16 15 GND NC 14 RFout / VDS2 VGS1 VGS2 Quiescent Current Temperature Compensation 13 12 NC GND (Top View) Note: Exposed backside flag is source terminal for transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections © Freescale Semiconductor, Inc., 2007. All rights reserved. MW6IC2015NBR1 MW6IC2015GNBR1 1 RF Device Data Freescale Semiconductor Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Operating Junction Temperature Input Power Symbol VDSS VGS Tstg TJ Pin Value - 0.5, +68 - 0.5, +6 - 65 to +200 200 20 Unit Vdc Vdc °C °C dBm Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Final Application (Pout = 15 W CW) Driver Application (Pout = 3 W CW) Stage 1, 26 Vdc, IDQ1 = 100 mA Stage 2, 26 Vdc, IDQ2 = 170 mA Stage 1, 26 Vdc, IDQ1 = 130 mA Stage 2, 26 Vdc, IDQ2 = 170 mA Symbol RθJC 4.3 1.2 4.3 1.3 Value (1) Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1A (Minimum) A (Minimum) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale 1930 - 1990 MHz Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 100 mA, IDQ2 = 170 mA, Pout = 15 W PEP, f1 = 1930 MHz, f2 = 1930.1 MHz and f1 = 1990 MHz, f2 = 1990.1 MHz, Two - Tone CW Power Gain Power Added Efficiency Intermodulation Distortion Input Return Loss Gps PAE IMD IRL 24 26 — — 26 28 - 30 — — — - 27 - 10 dB % dBc dB Typical Two - Tone Performances (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 100 mA, IDQ2 = 170 mA, Pout = 15 W PEP, 1805 - 1880 MHz, Two - Tone CW, 100 kHz Tone Spacing Power Gain Power Added Efficiency Intermodulation Distortion Input Return Loss Gps PAE IMD IRL — — — — 26 28 - 30 - 10 — — — — dB % dBc dB 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (continued) MW6IC2015NBR1 MW6IC2015GNBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 100 mA, IDQ2 = 170 mA, 1805 - 1880 MHz and 1930 - 1990 MHz Saturated Pulsed Output Power, CW (8 μsec(on), 1 msec(off)) Quiescent Current Accuracy over Temperature with 1.8 kΩ Gate Feed Resistors ( - 10 to 85°C) (1) Gain Flatness in 30 MHz Bandwidth @ Pout = 3 W CW Average Deviation from Linear Phase in 30 MHz Bandwidth @ Pout = 3 W CW Average Group Delay @ Pout = 3 W CW Including Output Matching Part - to - Part Insertion Phase Variation @ Pout = 3 W CW, Six Sigma Window Psat ΔIQT GF Φ Delay ΔΦ — — — — — — 35 ±3 0.3 ±1 2.7 ±15 — — — — — — W % dB ° ns ° Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 130 mA, IDQ2 = 170 mA, Pout = 3 W Avg., 1805 - 1990 MHz and 1930 - 1990 MHz EDGE Modulation Power Gain Power Added Efficiency Error Vector Magnitude Spectral Regrowth at 400 kHz Offset Spectral Regrowth at 600 kHz Offset Gps PAE EVM SR1 SR2 — — — — — 27 19 0.8 - 69 - 78 — — — — — dB % % dBc dBc 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977. MW6IC2015NBR1 MW6IC2015GNBR1 RF Device Data Freescale Semiconductor 3 VDD2 VDD1 C1 RF INPUT 1 2 3 NC 4 NC 5 NC 6 C11 C6 VGG1 R1 C14 VGG2 R2 C4 C15 C5 7 NC 8 Quiescent Current Temperature Compensation 9 NC 13 10 NC 11 12 C8 Z9 C10 C12 C13 DUT 16 NC 15 C2 Z8 RF OUTPUT C3 Z1 Z2 Z3 14 Z4 Z5 C7 C9 Z6 Z7 Z1* Z2 Z3 Z4 Z5 1.68″ 0.50″ 0.15″ 0.13″ 0.10″ x 0.08″ Microstrip x 0.08″ Microstrip x 0.04″ Microstrip x 0.35″ Microstrip x 0.35″ Microstrip Z6* Z7 Z8, Z9 PCB 0.61″ x 0.04″ Microstrip 1.30″ x 0.04″ Microstrip 1.18″ x 0.08″ Microstrip Taconic TLX8 - 0300, 0.030″, εr = 2.55 * Variable for tuning. Figure 3. MW6IC2015NBR1(GNBR1) Test Circuit Schematic — 1930 - 1990 MHz Table 6. MW6IC2015NBR1(GNBR1) Test Circuit Component Designations and Values — 1930 - 1990 MHz Part C1, C14, C15 C2, C4, C11 C3, C5 C6 C7, C8 C9, C10 C12 C13 R1 R2 Description 2.2 μF Chip Capacitors 5.6 pF Chip Capacitors 10 μF Chip Capacitors 1 pF Chip Capacitor 2.2 pF Chip Capacitors 0.5 pF Chip Capacitors 0.2 pF Chip Capacitor 0.1 pF Chip Capacitor 10 kΩ, 1/4 W Chip Resistor 18 Ω, 1/4 W Chip Resistor Part Number C3225X5R1H225MT ATC100B5R6CT500XT C5750X5R1H106MT ATC100B1R0BT500XT ATC100B2R2BT500XT ATC100B0R5BT500XT ATC100B0R2BT500XT ATC100B0R1BT500XT CRCW12061001FKTA CRCW120618R0FKTA Manufacturer TDK ATC TDK ATC ATC ATC ATC ATC Vishay Vishay MW6IC2015NBR1 MW6IC2015GNBR1 4 RF Device Data Freescale Semiconductor VDD1 C2 C3 VDD2 MW6IC2015, Rev. 0 C1 CUT OUT AREA C7 C8 C9 C11 C10 C12 C13 C6 C14 R1 R2 C4 VGG2 C5 VGG1 C15 Figure 4. MW6IC2015NBR1(GNBR1) Test Circuit Component Layout — 1930 - 1990 MHz MW6IC2015NBR1 MW6IC2015GNBR1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS — 1930 - 1990 MHz IMD, INTERMODULATION DISTORTION (dBc) IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) IRL, INPUT RETURN LOSS (dB) 40 PAE, POWER ADDED EFFICIENCY (%) Gps, POWER GAIN (dB) 35 PAE 30 Gps 25 20 IMD 15 10 1900 VDD = 26 Vdc, Pout = 7.5 W (Avg.) IDQ1 = 100 mA, IDQ2 = 170 mA 100 kHz Tone Spacing 1920 1940 1960 1980 −50 −60 2000 IRL −30 −40 −20 0 −10 f, FREQUENCY (MHz) Figure 5. Two - Tone Wideband Performance @ Pout = 7.5 Watts Avg. 30 Gps PAE, POWER ADDED EFFICIENCY (%) Gps, POWER GAIN (dB) 25 20 15 10 5 IMD PAE IRL −10 −20 −30 −40 VDD = 26 Vdc, Pout = 1.5 W (Avg.) IDQ1 = 100 mA, IDQ2 = 170 mA 100 kHz Tone Spacing 1920 1940 1960 1980 −50 −60 2000 0 0 1900 f, FREQUENCY (MHz) Figure 6. Two - Tone Wideband Performance @ Pout = 1.5 Watts Avg. IDQ1 = 130 mA IDQ2 = 170 mA IDQ1 = 100 mA IDQ2 = 170 mA IDQ1 = 100 mA IDQ2 = 130 mA IDQ1 = 70 mA IDQ2 = 170 mA IMD, INTERMODULATION DISTORTION (dBc) 31 30 Gps, POWER GAIN (dB) 29 28 27 26 25 24 23 0.1 −10 −20 −30 −40 −50 7th Order −60 −70 −80 0.1 1 Pout, OUTPUT POWER (WATTS) PEP 10 30 5th Order VDD = 26 Vdc IDQ1 = 100 mA, IDQ2 = 170 mA f = 1960 MHz, 100 kHz Tone Spacing 3rd Order IDQ1 = 100 mA IDQ2 = 210 mA VDD = 26 Vdc Center Frequency = 1960 MHz 100 kHz Tone Spacing 1 Pout, OUTPUT POWER (WATTS) AVG. 10 30 Figure 7. Two - Tone Power Gain versus Output Power Figure 8. Intermodulation Distortion Products versus Output Power MW6IC2015NBR1 MW6IC2015GNBR1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — 1930 - 1990 MHz IMD, INTERMODULATION DISTORTION (dBc) −30 3rd Order Pout, OUTPUT POWER (dBm) 48 P3dB = 44.8 dBm (30 W) P1dB = 44 dBm (25 W) 44 Actual Ideal −40 46 −50 5th Order −60 7th Order VDD = 26 Vdc, Pout = 75 W (PEP) IDQ1 = 100 mA, IDQ2 = 170 mA Two −Tone Measurements (f1 + f2)/2 = Center Frequency of 1960 MHz 1 10 100 42 VDD = 26 Vdc IDQ1 = 100 mA, IDQ2 = 170 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 1960 MHz 10 15 20 Pin, INPUT POWER (dBm) 25 30 −70 40 −80 0.1 38 TWO −TONE SPACING (MHz) Figure 9. Intermodulation Distortion Products versus Tone Spacing PAE, POWER ADDED EFFICIENCY (%), Gps, POWER GAIN (dB) 35 30 25 20 15 10 5 0 0.1 PAE ACPR Figure 10. Pulsed CW Output Power versus Input Powe