RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6P9220H Rev. 2, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. • Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1600 mA, Pout = 47 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 20 dB Drain Efficiency — 30% ACPR @ 750 kHz Offset — - 47.1 dBc in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 220 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Device Designed for Push - Pull Operation Only • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF6P9220HR3 880 MHz, 47 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFET CASE 375G - 04, STYLE 1 NI - 860C3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +68 - 0.5, +12 700 4 - 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 220 W CW Case Temperature 76°C, 47 W CW Symbol RθJC Value(1,2) 0.25 0.28 Unit °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF6P9220HR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 3B (Minimum) C (Minimum) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics (1) Symbol IDSS IDSS IGSS Min — — — Typ — — — Max 10 1 1 Unit μAdc μAdc μAdc Zero Gate Voltage Drain Leakage Current (4) (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (4) (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 350 μAdc) Gate Quiescent Voltage (3) (VDS = 28 Vdc, ID = 1600 mAdc, Measured in Functional Test) Drain- Source On - Voltage (1) (VGS = 10 Vdc, ID = 2.4 Adc) Forward Transconductance (1) (VDS = 10 Vdc, ID = 2.4 Adc) Dynamic Characteristics (1,2) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) VGS(th) VGS(Q) VDS(on) gfs 1 2 0.1 — 2.2 2.8 0.22 7.4 3 4 0.3 — Vdc Vdc Vdc S Crss — 2.1 — pF Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, Pout = 47 W Avg. N - CDMA, f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss 1. 2. 3. 4. Each side of device measured separately. Part internally matched both on input and output. Measurement made with device in push - pull configuration. Drains are tied together internally as this is a total device value. Gps ηD ACPR IRL 18.5 28.5 — — 20 30 - 47.1 - 14 23 — - 45 -9 dB % dBc dB MRF6P9220HR3 2 RF Device Data Freescale Semiconductor R1 VBIAS B1 + R3 COAX1 C1 C2 C3 Z19 Z8 Z10 Z12 Z14 Z16 C14 C10 Z3 C5 R2 COAX2 VBIAS + C9 C7 C8 C24 Z1, Z18 Z2, Z3 Z4, Z5 Z6, Z7 Z8, Z9 0.401″ x 0.081″ Microstrip 0.563″ x 0.081″ Microstrip 0.416″ x 0.727″ Microstrip 0.058″ x 1.01″ Microstrip 0.191″ x 0.507″ Microstrip Z10, Z11 Z12, Z13 Z14, Z15 Z16, Z17 Z19, Z20 PCB + C19 C20 + C22 C21 B2 Z7 Z20 C6 Z5 DUT C11 C12 RF Z18 OUTPUT C23 + C15 C16 + C18 C17 VSUPPLY COAX3 Z6 Z2 RF INPUT Z1 C4 Z4 Z9 Z13 Z15 Z17 C13 Z11 COAX4 VSUPPLY 1.054″ x 0.150″ Microstrip 0.225″ x 0.507″ Microstrip 0.440″ x 0.335″ Microstrip 0.123″ x 0.140″ Microstrip 0.165″ x 0.339″ Microstrip GX - 0300, 0.030″, εr = 2.55 Figure 1. MRF6P9220HR3 Test Circuit Schematic Table 5. MRF6P9220HR3 Test Circuit Component Designations and Values Part B1, B2 C1, C9 C2, C7, C17, C21 C3, C8, C16, C20 C4, C5, C13, C14 C6, C12 C10 C11 C15, C19 C18, C22 C23, C24 Coax1, 2, 3, 4 R1, R2 R3 Description Ferrite Beads, Short 1.0 μF, 50 V Tantalum Chip Capacitors 0.1 μF Chip Capacitors 1000 pF 100B Chip Capacitors 100 pF 100B Chip Capacitors 8.2 pF 600B Chip Capacitors 9.1 pF 600B Chip Capacitor 1.8 pF 600B Chip Capacitor 47 μF, 50 V Electrolytic Capacitors 470 μF, 63 V Electrolytic Capacitors 22 pF 600B Chip Capacitors 50 Ω, Semi Rigid Coax, 2.40″ Long 10 Ω, 1/8 W Chip Resistors (1206) 1.0 kΩ, 1/8 W Chip Resistor (1206) Part Number 2743019447 T491C105K050AS CDR33BX104AKWS 100B102JP50X 100B101JP500X 600B8R2BT250XT 600B9R1BT250XT 600B1R8BT250XT MVK50VC47RM8X10TP SME63V471M12X25LL 600B220FT250XT UT - 141A- TP Kemet Kemet ATC ATC ATC ATC ATC Nippon United Chemi - Con ATC Micro - Coax Manufacturer Fair- Rite MRF6P9220HR3 RF Device Data Freescale Semiconductor 3 C1 B1 C3 C15 C18 VDD C16 C17 VGG R3 C2 R1 C23 COAX1 COAX3 MRF6P9220, Rev. 1 C4 CUT OUT AREA C11 C10 C12 C14 C6 C5 C13 COAX2 COAX4 C20 VGG C7 C8 B2 C24 VDD C21 C9 R2 C19 C22 Figure 2. MRF6P9220HR3 Test Circuit Component Layout MRF6P9220HR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS ηD, DRAIN EFFICIENCY (%) ACPR (dBc), ALT1 (dBc) −7 −9 −11 −13 −15 −17 ηD, DRAIN EFFICIENCY (%) ACPR (dBc), ALT1 (dBc) −7 −9 −11 −13 −15 −17 2400 mA −50 2000 mA 1600 mA −60 3 10 100 500 5 10 100 Pout, OUTPUT POWER (WATTS) PEP 500 Pout, OUTPUT POWER (WATTS) PEP IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) 21 20.7 20.4 Gps, POWER GAIN (dB) 20.1 19.8 19.5 19.2 18.9 18.6 18.3 18 850 860 870 880 890 900 f, FREQUENCY (MHz) ALT1 IRL ACPR VDD = 28 Vdc, Pout = 47 W (Avg.) IDQ = 1600 mA, N−CDMA IS−95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Gps ηD 31 30 29 28 27 −45 −50 −55 −60 −65 −70 910 Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 47 Watts Avg. 20 19.8 V = 28 Vdc, Pout = 94 W (Avg.) 19.6 DD IDQ = 1600 mA, N−CDMA IS−95 19.4 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 19.2 19 18.8 18.6 18.4 18.2 18 850 860 870 880 890 900 f, FREQUENCY (MHz) ALT1 IRL ACPR ηD 42 41 40 39 Gps 38 −35 −40 −45 −50 −55 −60 910 20.5 20 Gps, POWER GAIN (dB) 19.5 19 18.5 800 mA 18 17.5 17 VDD = 28 Vdc, f1 = 879.95 MHz, f2 = 880.05 MHz Two−Tone Measurements, 100 kHz Tone Spacing 2000 mA 1600 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 2400 mA Gps, POWER GAIN (dB) Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 94 Watts Avg. −10 VDD = 28 Vdc, f1 = 879.95 MHz, f2 = 880.05 MHz Two−Tone Measurements, 100 kHz Tone Spacing −20 −30 1200 mA IDQ = 800 mA −40 1200 mA Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6P9220HR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS −10 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) −20 −30 −40 −50 −60 −70 −80 −90 7 10 100 Pout, OUTPUT POWER (WATTS) PEP 500 7th Order 3rd Order 5th Order VDD = 28 Vdc, IDQ = 1600 mA, f1 = 879.95 MHz f2 = 880.05 MHz, Two−Tone Measurements −20 −25 −30 −35 −40 −45 −50 −55 −60 0.1 1 TWO−TONE SPACING (MHz) 10 50 7th Order 3rd Order 5th Order VDD = 28 Vdc, Pout = 220 W (PEP) IDQ = 1600 mA, Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz Figure 7. Intermodulation Distortion Products versus Output Power Figure 8. Intermodulation Distortion Products versus Tone Spacing 61 Pout, OUTPUT POWER (dBm) 59 57 P6dB = 54.95 dBm (312.77 W) Ideal P3dB = 54.60 dBm (288.76 W) P1dB = 54.05 dBm (255.09 W) 55 53 51 49 29 31 33 35 37 39 41 Pin, INPUT POWER (dBm) VDD = 28 Vdc, IDQ = 1600 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 880 MHz Actual Figure 9. Pulse CW Output Power versus Input Power ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 50 VDD = 28 Vdc, IDQ = 1600 mA f = 880 MHz, N−CDMA IS−95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 25_C ηD −30_C −30 40 −35 25_C 85_C −40 30 TC = −30_C 20 25_C 10 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. 100 85_C ACPR Gps −45 −50 −55 300 Figure 10. Single - Carrier N - CDMA ACPR, Power Gain and Drain Efficiency versus Output Power MRF6P9220HR3 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 21 TC = −30_C 20.5 Gps, POWER GAIN (dB) 20 19.5 19 18.5 18 17.5 17 7 10 VDD = 28 Vdc IDQ = 1600 mA f = 880 MHz 100 Pout, OUTPUT POWER (WATTS) CW 85_C ηD 25_C Gps 25_C 85_C 48 40 32 24 16 8 500 −30_C 64 56 ηD, DRAIN EFFICIENCY (%) 72 Figure 11. Power Gain and Drain Efficiency versus CW Output Power 20.5 19.5 Gps, POWER GAI