RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 2, 3/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C for WLL applications. • Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1900 mA, Pout = 40 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 14 dB Drain Efficiency — 23.5% IM3 @ 10 MHz Offset — - 37.5 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 41 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2340 MHz, 190 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • RoHS Compliant • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. MRF6P23190HR6 2300 - 2400 MHz, 40 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFET CASE 375D - 05, STYLE 1 NI - 1230 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature CW Operation @ TC = 25°C Derate above 25°C www.DataSheet4U.com Symbol VDSS VGS Tstg TC TJ CW Value - 0.5, +68 - 0.5, +12 - 65 to +150 150 200 250 1.3 Unit Vdc Vdc °C °C °C W W/°C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 100°C, 160 W CW Case Temperature 83°C, 40 W CW Symbol RθJC Value (1,2) 0.22 0.24 Unit °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007. All rights reserved. MRF6P23190HR6 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) III (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics(1) IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage(1) (VDS = 10 Vdc, ID = 200 μAdc) Gate Quiescent Voltage(3) (VDD = 28 Vdc, ID = 1900 mAdc, Measured in Functional Test) Drain - Source On - Voltage(1) (VGS = 10 Vdc, ID = 2.2 Adc) Dynamic Characteristics (1,2) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.5 — pF VGS(th) VGS(Q) VDS(on) 1 2 0.1 2 2.8 0.21 3 4 0.3 Vdc Vdc Vdc Symbol Min Typ Max Unit Functional Tests(3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1900 mA, Pout = 40 W Avg., f1 = 2300 MHz, f2 = 2310 MHz and f1 = 2390 MHz, f2 = 2400 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Each side of device measured separately. 2. Part internally matched both on input and output. 3. Measurement made with device in push - pull configuration. Gps ηD IM3 ACPR IRL 13 22 — — — 14 23.5 - 37.5 - 41 - 13 16 — - 35 - 38 — dB % dBc dBc dB MRF6P23190HR6 2 RF Device Data Freescale Semiconductor + R1 VBIAS + C12 + C11 C10 C9 B2 Z3 RF INPUT Z1 Z2 Z4 C2 Z16 Z14 C4 R2 VBIAS + C16 + C15 C14 C13 B4 C8 C22 C23 C24 C25 C26 C6 + C28 B3 Z20 Z18 Z22 Z24 C1 DUT Z6 Z8 Z10 Z12 Z5 Z7 Z9 C5 Z13 Z11 C3 Z15 B1 Z19 Z17 Z21 Z23 C7 C17 C18 C19 C20 C21 C27 VSUPPLY Z25 Z26 Z27 RF OUTPUT Z28 VSUPPLY Z1, Z28 Z2 Z3 Z4 Z5, Z6 Z7, Z8 Z9, Z10 Z11, Z12 Z13, Z14 Z15, Z16 0.380″ 0.850″ 2.244″ 0.186″ 0.614″ 0.570″ 0.072″ 0.078″ 0.861″ 0.187″ x 0.081″ x 0.135″ x 0.081″ x 0.074″ x 0.081″ x 0.282″ x 0.500″ x 0.500″ x 0.050″ x 0.782″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z17, Z18 Z19, Z20 Z21, Z22 Z23 Z24 Z25 Z26 Z27 PCB 0.321″ x 0.782″ Microstrip 0.404″ x 0.074″ Microstrip 0.918″ x 0.081″ Microstrip 0.346″ x 0.081″ Microstrip 2.103″ x 0.081″ Microstrip 0.037″ x 0.135″ Microstrip 0.250″ x 0.300″ Microstrip 0.563″ x 0.135″ Microstrip Arlon GX - 0300 - 5022, 0.030″, εr = 2.55 Figure 1. MRF6P23190HR6 Test Circuit Schematic Table 5. MRF6P23190HR6 Test Circuit Component Designations and Values Part B1, B2, B3, B4 C1, C2, C3, C4 C5, C6, C7, C8 C9, C13 C10, C14, C17, C22 C11, C15 C12, C16 C18, C19, C20, C21, C23, C24, C25, C26 C27, C28 R1, R2 Ferrite Beads 5.1 pF Chip Capacitors 5.6 pF Chip Capacitors 0.01 μF, 100 V Chip Capacitors 2.2 μF, 50 V Chip Capacitors 22 μF, 25 V Tantalum Capacitors 47 μF, 16 V Tantalum Capacitors 10 μF, 50 V Chip Capacitors 330 μF, 63 V Electrolytic Capacitors 240 Ω, 1/4 W Chip Resistors Description Part Number 2508051107Y0 ATC100B5R1CT500XT ATC100B5R6CT500XT C1825C103J1RAC C1825C225J5RAC ECS - T1ED226R T491D476K016AT GRM55DR61H106KA88B NACZF331M63V CRCW12062400FKTA Manufacturer Fair - Rite ATC ATC Kemet Kemet Panasonic TE series Kemet Murata Nippon Vishay MRF6P23190HR6 RF Device Data Freescale Semiconductor 3 R1 C12 C11 C10* C9* C20 C21 B1 B2 C5 C7 C17 C18 C19 C27 C3 C1 CUT OUT AREA C2 C4 MRF6P23190H Rev. 3 C6 B3 B4 C8 C22 R2 C16 C15 C14* C13* C23 C24 C25 C26 C28 *Stacked. Figure 2. MRF6P23190HR6 Test Circuit Component Layout MRF6P23190HR6 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 14.4 14.2 Gps, POWER GAIN (dB) 14 13.8 13.6 13.4 13.2 13 ACPR IRL Gps IM3 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) VDD = 28 Vdc, Pout = 40 W (Avg.), IDQ = 1900 mA 2−Carrier W−CDMA, 10 MHz Carrier Spacing ηD 25 24 23 22 −36 −38 −40 −42 −44 2430 ηD, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) −13 −15 −16 −18 −19 −21 ηD, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) −12 −13 −15 −16 −18 −19 2850 mA IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) 12.8 2270 2290 2310 2330 2350 2370 2390 2410 f, FREQUENCY (MHz) Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 40 Watts Avg. 14 13.8 Gps, POWER GAIN (dB) 13.6 13.4 13.2 13 12.8 12.6 ACPR IRL Gps IM3 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) VDD = 28 Vdc, Pout = 80 W (Avg.), IDQ = 1900 mA 2−Carrier W−CDMA, 10 MHz Carrier Spacing ηD 35 34 32 31 −26 −28 −30 −32 −34 2430 12.4 2270 2290 2310 2330 2350 2370 2390 2410 f, FREQUENCY (MHz) Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 80 Watts Avg. 16 15 Gps, POWER GAIN (dB) 14 13 12 11 10 0.5 IDQ = 2850 mA 2375 mA 1900 mA 1425 mA 950 mA VDD = 28 Vdc, f1 = 2345 MHz, f2 = 2355 MHz Two −Tone Measurements, 10 MHz Tone Spacing 1 10 100 500 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) −10 −20 −30 −40 −50 −60 −70 0.5 1425 mA 2375 mA IDQ = 950 mA 1900 mA VDD = 28 Vdc, f1 = 2345 MHz, f2 = 2355 MHz Two −Tone Measurements, 10 MHz Tone Spacing 1 10 100 500 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6P23190HR6 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) 0 −10 −20 −30 −40 −50 −60 0.1 3rd Order 5th Order VDD = 28 Vdc, Pout = 190 W (PEP) IDQ = 1900 mA, Two −Tone Measurements (f1 + f2)/2 = Center Frequency of 2350 MHz 65 63 Pout, OUTPUT POWER (dBm) 61 59 57 55 53 51 49 1 10 100 35 37 39 41 43 45 47 49 TWO −TONE SPACING (MHz) Pin, INPUT POWER (dBm) VDD = 28 Vdc, IDQ = 1900 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 2350 MHz P1dB = 54.5 dBm (283.85 W) Actual P6dB = 55.73 dBm (374.11 W) P3dB = 55.1 dBm (325.54 W) Ideal 7th Order Figure 7. Intermodulation Distortion Products versus Tone Spacing ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 36 30 24 18 12 IM3 6 0 1 ACPR Figure 8. Pulsed CW Output Power versus Input Power −25 85_C 25_C −30_C −30 85_C ηD −30_C 25_C −35 −40 −45 −50 −55 10 100 200 TC = −30_C Gps 85_C 25_C Pout, OUTPUT POWER (WATTS) AVG. Figure 9. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power 17 16 Gps, POWER GAIN (dB) 15 14 85_C 13 12 11 1 10 100 400 Pout, OUTPUT POWER (WATTS) CW ηD VDD = 28 Vdc IDQ = 1900 mA f = 2350 MHz TC = −30_C 25_C Gps −30_C 60 50 ηD, DRAIN EFFICIENCY (%) 85_C 40 30 20 10 0 Gps, POWER GAIN (dB) 15 IDQ = 1900 mA f = 2350 MHz 14 13 12 VDD = 24 V 11 10 0 50 100 150 200 250 300 Pout, OUTPUT POWER (WATTS) CW 28 V 32 V Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6P23190HR6 6 Figure 11. Power Gain versus Output Power IM3 (dBc), ACPR (dBc) VDD = 28 Vdc, IDQ = 1900 mA f1 = 2345 MHz, f2 = 2355 MHz 2−Carrier W−CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 108 MTTF (HOURS) 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE