RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6P21190HR6 Rev. 2, 8/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 2 x 950 mA, Pout = 44 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 15.5 dB Drain Efficiency — 26.5% IM3 @ 10 MHz Offset — - 37 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 40 dBc @ 3.84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 190 Watts CW Output Power • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • Low Gold Plating Thickness on Leads, 40µ″ Nominal. • Pb - Free and RoHS Compliant • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. MRF6P21190HR6 2170 MHz, 44 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFET CASE 375D - 05, STYLE 1 NI - 1230 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature CW Operation Symbol VDSS VGS PD Tstg TJ CW Value - 0.5, +68 - 0.5, +12 700 4 - 65 to +150 200 190 Unit Vdc Vdc W W/°C °C °C W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 190 W CW Case Temperature 72°C, 44 W CW Symbol RθJC Value (1,2) 0.25 0.27 Unit °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.  Freescale Semiconductor, Inc., 2005. All rights reserved. MRF6P21190HR6 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) III (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics (1) Symbol IDSS IDSS IGSS Min — — — Typ — — — Max 10 1 1 Unit µAdc µAdc µAdc Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 250 µAdc) Gate Quiescent Voltage (3) (VDS = 28 Vdc, ID = 1900 mAdc) Drain - Source On - Voltage (1) (VGS = 10 Vdc, ID = 2.2 Adc) Forward Transconductance (1) (VDS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics (1,2) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) VGS(th) VGS(Q) VDS(on) gfs 1 2 0.1 — 2 2.8 0.21 5.3 3 4 0.3 — Vdc Vdc Vdc S Crss — 1.5 — pF Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 2 x 950 mA, Pout = 44 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Each side of device measured separately. 2. Part is internally matched both on input and output. 3. Measurements made with device in push - pull configuration. Gps ηD IM3 ACPR IRL 14.5 25 — — — 15.5 26.5 - 37 - 40 - 15 17.5 — - 35 - 38 -9 dB % dBc dBc dB MRF6P21190HR6 2 RF Device Data Freescale Semiconductor B1 VBIAS + C6 R1 C5 + C4 C3 B2 R2 Z4 RF INPUT Z1 Z2 Z3 C7 B3 VBIAS + C12 R3 C11 + C10 C9 B4 R4 Z1 Z2 Z3 Z4 Z5, Z6 Z7, Z8 Z9, Z10 Z11, Z12 Z13, Z14 0.850″ x 0.067″ Microstrip 1.140″ x 0.114″ Microstrip 1.830″ x 0.067″ Microstrip 0.088″ x 0.067″ Microstrip 0.250″ x 0.067″ Microstrip 0.324″ x 0.178″ Microstrip 0.143″ x 0.655″ Microstrip 0.111″ x 0.655″ Microstrip 0.124″ x 0.712″ Microstrip Z15, Z16 Z17, Z18 Z19, Z20 Z21 Z22 Z23 Z24 PCB C8 C1 DUT Z5 Z7 Z9 Z11 Z13 Z6 Z8 Z10 Z12 C2 Z14 + C14 C15 + C19 C16 C17 C18 + C20 + VSUPPLY C21 Z16 Z18 Z20 C13 Z22 Z23 RF Z24 OUTPUT Z15 Z17 Z19 C22 Z21 + C23 C24 + C28 C25 C26 C27 + C29 + VSUPPLY C30 0.289″ x 0.712″ Microstrip 0.127″ x 0.200″ Microstrip 0.288″ x 0.067″ Microstrip 0.088″ x 0.067″ Microstrip 1.830″ x 0.067″ Microstrip 1.140″ x 0.114″ Microstrip 0.850″ x 0.066″ Microstrip Taconic RF - 35, 0.030″, εr = 3.5 Figure 1. MRF6P21190HR6 Test Circuit Schematic Table 5. MRF6P21190HR6 Test Circuit Component Designations and Values Part B1, B2, B3, B4 C1, C7 C2, C8, C15, C24 C3, C9, C18, C27 C4, C10 C5, C11, C17, C26 C6, C12 C13, C22 C14, C19, C20, C23, C28, C29 C16, C25 C21, C30 R1, R3 R2, R4 RF Beads 30 pF Chip Capacitors 6.8 pF Chip Capacitors 1k pF Chip Capacitors 1 µF, 50 V Tantalum Chip Capacitors 0.1 µF Chip Capacitors 100 µF, 50 V Electrolytic Capacitors, Radial 43 pF Chip Capacitors 22 µF, 35 V Tantalum Chip Capacitors 0.56 µF Chip Capacitors (1825) 470 µF, 63 V Electrolytic Capacitors, Radial 1 kW, 1/4 W Chip Resistors (1206) 12 W, 1/4 W Chip Resistors (1206) Description Part Number 2743019447 100B300JP500X 100B6R8CP500X 100B102JP50X T491C105K050AS CDR33BX104AKWS MCR50V107M8X11 100B430JP500X T491X226K035AS C1825C564J5RAC MCR63V477M13X26 CRCW12061001F100 CRCW120612R0F100 Manufacturer Fair - Rite ATC ATC ATC Kemet Kemet Multicomp ATC Kemet Kemet Multicomp Vishay Vishay MRF6P21190HR6 RF Device Data Freescale Semiconductor 3 + C6 R1 C5 C4 C3 MRF6P21190 Rev 2 C14 C15 C16 C17 C18 - C21 C2 R2 B1 B2 C1 C19 C20 C13 + CUT OUT AREA C7 R4 B3 B4 C22 C28 C29 + + C12 R3 C11 C10 C9 C8 C23 C24 C25 C26 C27 - - C30 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF6P21190HR6 Test Circuit Component Layout MRF6P21190HR6 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 20 18 16 Gps, POWER GAIN (dB) 14 12 10 8 6 ACPR 4 2080 2100 2120 2140 2160 2180 2200 −50 2220 IRL −20 IM3 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) −30 −40 Gps VDD = 28 Vdc, Pout = 44 W (Avg.), IDQ = 1900 mA 2−Carrier W−CDMA, 10 MHz Carrier Spacing ηD 40 30 20 10 −10 ηD, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) −10 −15 −20 −25 −30 ηD, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) −10 −15 −20 −25 −30 IDQ = 2500 mA 10 IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) f, FREQUENCY (MHz) Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 44 Watts Avg. 20 18 16 Gps, POWER GAIN (dB) 14 12 10 8 6 4 2080 ACPR 2100 2120 2140 2160 2180 2200 IRL ηD Gps VDD = 28 Vdc, Pout = 87 W (Avg.), IDQ = 1900 mA 2−Carrier W−CDMA, 10 MHz Carrier Spacing 50 40 30 20 0 −10 IM3 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) −20 −30 −40 2220 f, FREQUENCY (MHz) Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 87 Watts Avg. 17 16.5 Gps, POWER GAIN (dB) 2200 mA 16 1900 mA 15.5 1600 mA 15 14.5 14 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP 1300 mA VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two−Tone Measurements, 10 MHz Tone Spacing IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 2500 mA −30 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two−Tone Measurements, 10 MHz Tone Spacing 2200 mA −35 1900 mA 1600 mA −45 −40 −50 1300 mA −55 1 100 400 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6P21190HR6 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) −15 −20 −25 −30 −35 −40 −45 −50 −55 0.1 7th Order 5th Order 3rd Order VDD = 28 Vdc, Pout = 190 W (PEP), IDQ = 1900 mA Two−Tone Measurements, Center Frequency = 2140 MHz Pout, OUTPUT POWER (dBm) 58 57 56 55 54 53 52 51 50 49 48 47 1 10 100 32 33 34 35 36 37 38 39 40 41 42 43 44 TWO−TONE SPACING (MHz) Pin, INPUT POWER (dBm) VDD = 28 Vdc, IDQ = 1900 mA Pulsed CW, 8 µsec(on), 1 msec(off) f = 2140 MHz P1dB = 53.7 dBm (233 W) Actual P3dB = 54.45 dBm (279 W) Ideal Figure 7. Intermodulation Distortion Products versus Tone Spacing ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 30 25 20 15 10 5 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. VDD = 28 Vdc, IDQ = 1900 mA f1 = 2135 MHz, f2 = 2145 MHz 2−Carrier W−CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) −30 IM3 −35 −40 Gps −45 −50 −55 −60 100 IM3 (dBc), ACPR (dBc) ACPR 15 Gps, POWER GAIN (dB) 12 9 6 3 0 3 ηD 18 Gps Figure 8. Pulse CW Output Power versus Input Power 60 ηD, DRAIN EFFICIENCY (%) 50 40 30 20 VDD = 28 Vdc IDQ = 190