RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6P18190H Rev. 0, 4/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W - CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. • Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 2000 mA, Pout = 44 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 15.9 dB Drain Efficiency — 27.5% IM3 @ 10 MHz Offset — - 37 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 41 dBc @ 3.84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 1880 MHz, 190 Watts CW Output Power • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched, Controlled Q, for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • Low Gold Plating Thickness on Leads, 40µ″ Nominal. • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. MRF6P18190HR6 1805 - 1880 MHz, 44 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFET CASE 375D - 05, STYLE 1 NI - 1230 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature CW Operation Symbol VDSS VGS PD Tstg TJ CW Value - 0.5, +68 - 0.5, +12 648 3.7 - 65 to +150 200 190 Unit Vdc Vdc W W/°C °C °C W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 190 W CW Case Temperature 76°C, 44 W CW Symbol RθJC Value (1,2) 0.27 0.30 Unit °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.  Freescale Semiconductor, Inc., 2005. All rights reserved. MRF6P18190HR6 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) III (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 250 µAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1000 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics (1,2) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.5 — pF VGS(th) VGS(Q) VDS(on) gfs 1 2 — — 2 2.8 0.21 5.3 3 4 — — Vdc Vdc Vdc S IDSS IDSS IGSS — — — — — — 10 1 1 µAdc µAdc µAdc Symbol Min Typ Max Unit Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 2000 mA, Pout = 44 W Avg., f1 = 1807.5 MHz, f2 = 1817.5 MHz and f1 = 1867.5 MHz, f2 = 1877.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Each side of device measured separately. 2. Part is internally matched both on input and output. 3. Measurements made with device in push - pull configuration. Gps ηD IM3 ACPR IRL 14.5 25.5 — — — 15.9 27.5 - 37 - 41 - 12 17.5 — - 35 - 38 -9 dB % dBc dBc dB MRF6P18190HR6 2 RF Device Data Freescale Semiconductor B1 VBIAS + C7 R1 C6 + C5 C4 B2 R2 Z2 RF INPUT Z1 Z3 C8 Z13 B3 VBIAS + C13 R3 + C12 C11 C10 B4 R4 Z1 Z2 Z3 Z4, Z5 Z6, Z7 Z8, Z9 Z10, Z11 Z12, Z13 Z14, Z15 Z16, Z17 0.700″ x 0.067″ Microstrip 1.140″ x 0.114″ Microstrip 2.112″ x 0.067″ Microstrip 0.174″ x 0.067″ Microstrip 0.382″ x 0.250″ Microstrip 0.036″ x 0.764″ Microstrip 0.178″ x 0.764″ Microstrip 0.689″ x 0.073″ Microstrip 0.111″ x 0.764″ Microstrip 0.124″ x 0.856″ Microstrip Z18, Z19 Z20, Z21 Z22, Z23 Z24, Z25 Z26, Z27 Z28 Z29 Z30 Z31 PCB C9 C23 C24 C25 C26 C22 Z19 + C27 C2 R5 C1 Z5 Z7 Z9 Z11 Z15 Z17 Z21 Z23 Z25 Z27 Z29 DUT Z4 Z6 Z8 Z10 Z14 C14 C3 Z12 Z16 Z20 Z22 Z24 Z26 Z28 C15 Z18 C16 C17 C18 + C19 + C20 + VSUPPLY C21 Z30 RF Z31 OUTPUT C30 + C28 + C29 VSUPPLY 0.477″ x 0.136″ Microstrip 0.289″ x 0.856″ Microstrip 0.215″ x 0.385″ Microstrip 0.118″ x 0.259″ Microstrip 0.108″ x 0.067″ Microstrip 2.163″ x 0.067″ Microstrip 1.397″ x 0.114″ Microstrip 0.492″ x 0.067″ Microstrip 0.207″ x 0.067″ Microstrip Taconic RF - 35, 0.030″, εr = 3.5 Figure 1. MRF6P18190H Test Circuit Schematic Table 5. MRF6P18190H Test Circuit Component Designations and Values Part B1, B2, B3, B4 C1 C2, C8, C14, C22 C3, C9 C4, C10, C18, C26 C5, C11 C6, C12, C17, C25 C7, C13 C15, C23 C16, C24 C19, C20, C27, C28 C21, C29 C30 R1, R3 R2, R4 R5 Description Short RF Beads 0.6 - 4.5 pF Variable Capacitor 5.6 pF Chip Capacitors 7.5 pF Chip Capacitors 1K pF Chip Capacitors 1 µF, 50 V Tantalum Capacitors 0.1 µF Chip Capacitors 100 µF, 50 V Electrolytic Capacitors, Radial 6.8 pF Chip Capacitors 0.56 µF Chip Capacitors (1825) 22 µF, 35 V Tantalum Capacitors 470 µF, 63 V Electrolytic Capacitors, Radial 0.4 - 2.5 pF Variable Capacitor 1 kW, 1/4 W Chip Resistors (1206) 12 W, 1/4 W Chip Resistors (1206) 560 W Resistor Part Number 2743019447 27271SL 100B5R6CP500X 100B7R5CP500X 100B102JP50X T491C105K050AS CDR33BX104AKWS MCR50V107M8X11 600B6R8BT250XT C1825C564J5RAC T491X226K035AS MCR63V477M13X26 27283PC CRCW12061001F100 CRCW120612R0F100 D55342M07B560 Manufacturer Fair - Rite Johanson Components ATC ATC ATC Kemet Kemet Multicomp ATC Kemet Kemet Multicomp Johanson Components Vishay Vishay Vishay MRF6P18190HR6 RF Device Data Freescale Semiconductor 3 MRF6P18190 Rev. 2 + C7 R1 C6 C5 C4 C15 C3 R2 B1 B2 C2 CUT OUT AREA C14 C16 C19 C17 C18 - C21 + C20 C30 R5 C1 C8 C22 R4 B3 B4 C9 C27 C24 C25 C26 C28 + + C13 R3 C12 C11 C10 C23 - - C29 Figure 2. MRF6P18190H Test Circuit Component Layout MRF6P18190HR6 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 16.5 16.4 16.3 Gps, POWER GAIN (dB) 16.2 16.1 16 15.9 15.8 15.7 15.6 15.5 1760 IRL 1780 1800 1820 1840 1860 1880 1900 ACPR VDD = 28 Vdc Pout = 44 W (Avg.) IDQ = 2000 mA, 2−Carrier W−CDMA 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) G 28.2 28 ηD 27.8 27.6 27.4 ps ηD, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) −8 −10 −12 −14 −16 −18 ηD, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) −8 −10 −12 −14 −16 −18 IDQ = 2600 mA IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) IM3 −34 −36 −38 −40 −42 −44 1920 f, FREQUENCY (MHz) Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 44 Watts 15.8 15.7 15.6 Gps, POWER GAIN (dB) 15.5 15.4 15.3 15.2 15.1 15 1760 IRL Gps ηD VDD = 28 Vdc, Pout = 88 W (Avg.) IDQ = 2000 mA, 2−Carrier W−CDMA 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 40.4 40 39.6 39.2 −24 IM3 −26 −28 ACPR −30 −32 1920 1780 1800 1820 1840 1860 1880 1900 f, FREQUENCY (MHz) Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 88 Watts 17.5 17 Gps, POWER GAIN (dB) 16.5 16 15.5 15 14.5 14 13.5 0.1 1400 mA VDD = 28 Vdc, f1 = 1837.5 MHz f2 = 1847.5 MHz, Two−Tone Measurements, 10 MHz Tone Spacing 1 10 100 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 2600 mA 2300 mA 2000 mA 1700 mA −30 VDD = 28 Vdc, f1 = 1837.5 MHz, f2 = 1847.5 MHz Two−Tone Measurements, 10 MHz Tone Spacing −35 −40 −45 2300 mA −50 1400 mA −55 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 300 1700 mA 2000 mA Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6P18190HR6 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) −10 VDD = 28 Vdc, Pout = 190 W (PEP), IDQ = 2000 mA Two−Tone Measurements, Center Frequency = 1842.5 MHz Pout, OUTPUT POWER (dBm) −20 60 59 58 57 56 55 54 53 52 51 50 49 48 P3dB = 54.13 dBm (258.82 W) P1dB = 53.51 dBm (224.38 W) Ideal −30 3rd Order Actual −40 5th Order −50 7th Order VDD = 28 Vdc, IDQ = 2000 mA Pulsed CW, 8 µsec(on), 1 msec(off) Center Frequency = 1842.5 MHz 32 33 34 35 36 37 38 39 40 41 42 43 44 −60 0.01 0.1 1 10 100 TWO−TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 7. Intermodulation Distortion Products versus Tone Spacing ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 40 Figure 8. Pulse CW Output Power versus Input Power −30 IM3 −35 ACPR IM3 (dBc), ACPR (dBc) 30 VDD = 28 Vdc, IDQ = 2000 mA f1 = 1837.5 MHz, f2 = 1847.5 MHz 2 x W−CDMA, 10 MHz @ 3.84 MHz Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) Gps 85_C TC = 25_C ηD 20 −40 10 −30_C 25_C −30_C 25_C 85_C 10 −45 0 −10 1 −50 −55 100 150 Pout, OUTPUT POWER (WATTS) AVG. W−CDMA Figure 9. 2