The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5S21130/D MRF5S21130 RF Power Field Effect Transistors MRF5S21130R3 N–Channel Enhancement–Mode Lateral MOSFETs MRF5S21130S Designed for W–CDMA base station applications at frequencies from 2110 MRF5S21130SR3 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicaThe RF MOSFET Line t i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2–carrier W–CDMA Performance for VDD = 28 Volts, IDQ = 1200 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 –5 MHz and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW @ f1 –10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Output Power — 28 Watts Avg. Power Gain — 13.5 dB Efficiency — 26% IM3 — –37 dBc ACPR — –39 dBc • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 92 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • Qualified Up to a Maximum of 32 VDD Operation • Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 2170 MHz, 28 W AVG., 2 x W–CDMA, 28 V LATERAL N–CHANNEL RF POWER MOSFETs CASE 465B–03, STYLE 1 NI–880 MRF5S21130 CASE 465C–02, STYLE 1 NI–880S MRF5S21130S MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature CW Operation Symbol VDSS VGS PD Tstg TJ CW Value 65 –0.5, +15 315 2 –65 to +150 200 92 Unit Vdc Vdc Watts W/°C °C °C Watts NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 0 MOTOROLA RF  Motorola, Inc. 2002 DEVICE DATA MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 92 W CW Case Temperature 80°C, 28 W CW Symbol RθJC 0.56 0.56 Max Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 µAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1200 mAdc) Drain–Source On–Voltage (VGS = 10 Vdc, ID = 3 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.6 — pF VGS(th) VGS(Q) VDS(on) gfs 2.5 — — — 2.7 3.7 0.26 7.5 3.5 — 0.3 — Vdc Vdc Vdc S IDSS IDSS IGSS — — — — — — 10 1 1 µAdc µAdc µAdc Symbol Min Typ Max Unit FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2–carrier W–CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Common–Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW at f1 –10 MHz and f2 +10 MHz referenced to carrier channel power.) Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz at f1 –5 MHz and f2 +5 MHz.) Input Return Loss (VDD = 28 Vdc, Pout = 28 W Avg., IDQ = 1200 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) (1) Part is internally matched both on input and output. Gps 12 13.5 — dB η 24 26 — % IM3 –37 –35 dBc ACPR — –39 –37 dBc IRL — –12 –9 dB MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 2 MOTOROLA RF DEVICE DATA Vbias R1 + C1 R2 C3 C5 Z9 Z7 Z2 C7 C8 Z3 Z4 Z5 Z6 C6 Z10 C17 DUT Z8 Z11 Z12 Z13 C11 C9 + C13 + C15 + C20 Vsupply RF INPUT Z1 C18 Z14 Z15 Z16 RF OUTPUT C19 C10 + C2 C4 C12 + C14 + C16 Z1 Z2 Z3 Z4 Z5 Z6, Z7 Z8 0.500″ x 0.083″ Microstrip 0.995″ x 0.083″ Microstrip 0.905″ x 0.083″ Microstrip 0.159″ x 1.024″ Microstrip 0.117″ x 1.024″ Microstrip 0.749″ x 0.083″ Microstrip 0.117″ x 1.000″ Microstrip Z9, Z10 Z11 Z12 Z13 Z14, Z15 Z16 PCB 0.709″ x 0.083″ Microstrip 0.415″ x 1.000″ Microstrip 0.531″ x 0.083″ Microstrip 0.994″ x 0.083″ Microstrip 0.070″ x 0.220″ Microstrip 0.430″ x 0.083″ Microstrip Taconic TLX8, 0.76 mm, εr = 2.55 Figure 1. MRF5S21130 Test Circuit Schematic Table 1. MRF5S21130 Test Circuit Component Designations and Values Part C1, C2, C13, C14, C15, C16 C3, C4, C11, C12 C5, C6, C7, C9, C10, C18, C19 C8 C17 C20 R1, R2 Description 10 µF, 35 V Tantalum Capacitors 220 nF Chip Capacitors (1812) 6.8 pF 100B Chip Capacitors 0.1 pF 100B Chip Capacitor 0.5 pF 100B Chip Capacitor 220 µF, 63 V Electrolytic Capacitor, Radial 1 kW, 1/4 W Chip Resistors Value, P/N or DWG 293D1106X9035D 1812Y224KXA 100B6R8CW 100B0R1BW 100B0R5BW 13668221 Manufacturer Vishay–Sprague Vishay–Vitramon ATC ATC ATC Philips MOTOROLA RF DEVICE DATA MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 3 C1 R1 R2 C3 C9 C11 C13 C15 C20 C5 CUT OUT AREA C18 C7 C8 C6 C17 C19 C2 C4 C10 C12 C14 C16 MRF5S21130 Rev 0 Figure 2. MRF5S21130 Test Circuit Component Layout MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 4 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 14 13 G ps , POWER GAIN (dB) 12 11 10 9 8 7 IM3 ACPR IRL VDD = 28 Vdc, Pout = 28 W (Avg.), IDQ = 1200 mA 2-Carrier W-CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF) Gps η 35 30 25 20 -28 -32 -36 -40 2100 2120 2140 2160 2180 2200 -44 2220 η, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) -10 -15 -20 -25 -30 6 2060 2080 f, FREQUENCY (MHz) Figure 3. 2–Carrier W–CDMA Broadband Performance 15 IMD3, THIRD ORDER INTERMODULATION DISTORTION (dBc) 14.5 G ps , POWER GAIN (dB) 14 IDQ = 1600 mA 1400 mA 1200 mA 1000 mA 800 mA -25 -30 -35 -40 -45 -50 -55 -60 -65 1 10 800 mA 1000 mA IDQ = 1600 mA 1400 mA 1200 mA 13.5 13 12.5 12 VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurement, 10 MHz Tone Spacing 1 10 100 1000 Pout, OUTPUT POWER (WATTS) PEP IRL, INPUT RETURN LOSS (dB) VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurement, 10 MHz Tone Spacing 100 1000 11.5 11 Pout, OUTPUT POWER (WATTS) PEP Figure 4. Two–Tone Power Gain versus Output Power Figure 5. Third Order Intermodulation Distortion versus Output Power IMD, INTERMODULATION DISTORTION (dBc) -25 -30 -35 -40 -45 -50 -55 -60 0.1 5th Order 7th Order 3rd Order Pout , OUTPUT POWER (dBm) 58 57 56 55 54 53 52 51 100 50 35 37 39 P3dB = 53.02 dBm (200.5 W) Ideal P1dB = 52.5 dBm (178 W) Actual VDD = 28 Vdc, IDQ = 1200 mA Pulsed CW, 5 µsec(on), 1 msec(off) Center Frequency = 2140 MHz 41 43 45 Pin, INPUT POWER (dBm) VDD = 28 Vdc, Pout = 130 W (PEP), IDQ = 1200 mA Two-Tone Measurements, Center Frequency = 2140 MHz 1 10 TWO-TONE SPACING (MHz) Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power MOTOROLA RF DEVICE DATA MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 5 η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 35 30 25 20 15 10 5 0 5 IM3 (dBc), ACPR (dBc) VDD = 28 Vdc, IDQ = 1200 mA, f1 = 2135 MHz, f2 = 2145 MHz, 2 x W-CDMA, 10 MHz @ 3.84 MHz Bandwidth, Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF) ACPR η -20 -25 -20 -30 -40 -50 -60 (dB) -70 -80 -90 -100 -110 -120 -25 3.84 MHz Channel BW IM3 -30 -35 Gps -40 -45 -50 -ACPR @ +ACPR @ 3.84 MHz BW 3.84 MHz BW -IM3 @ 3.84 MHz BW -20 -15 -10 -5 0 5 10 +IM3 @ 3.84 MHz BW 15 20 25 10 15 20 25 30 35 40 -55 45 Pout, OUTPUT POWER (WATTS) AVG. (W-CDMA) f, FREQUENCY (MHz) Figure 8. 2–Carrier W–CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power Figure 9. 2-Carrier W-CDMA Spectrum 100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 MTBF FACTOR (HOURS x AMPS 2 ) 10 109 108 107 106 0 2 4 6 8 105 100 120 140 160 180 200 220 PEAK-TO-AVERAGE (dB) TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTBF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTBF factor by ID2 for MTBF in a particular application. Figure 10. CCDF W–CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single Carrier Test Signal Figure 11. MTBF Factor versus Junction Temperature MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3 6 MOTOROLA RF DEVICE DATA f = 2200 MHz f = 2080 MHz Zload* Zo = 25 Ω f = 2080 MHz f = 2200 MHz Zsource VDD = 28 Vdc, IDQ = 1200 mA, Pout = 28 W Avg. f MHz 2080 2110 2140 2170 2200 Zsource Ω 2.87 – j9.49 3.13 – j9.86 4.05 – j10.90 4.80 – j11.75 5.55 – j11.87 Zload Ω 1.51 – j2.97 1.52 – j2.54 1.59 – j2.68 1.62 – j2.70 1.54 – j3.13 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source