RF Power Field Effect Transistors

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF5S19150/D MRF5S19150R3 RF Power Field Effect Transistors MRF5S19150SR3 The RF MOSFET Line N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, Pout = 32 Watts, IDQ = 1400 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured over a 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz. Distortion Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Output Power — 32 Watts Avg. Power Gain — 14 dB Efficiency — 26% ACPR — - 50 dB IM3 — - 36.5 dBc • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR, @ 28 Vdc, f1 = 1960 MHz, 100 Watts CW Output Power • Excellent Thermal Stability • Qualified Up to a Maximum of 32 V Operation • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MAXIMUM RATINGS Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature CW Operation Symbol VDSS VGS PD Tstg TJ CW Value 65 - 0.5, +15 357 2 - 65 to +150 200 100 Unit Vdc Vdc Watts W/°C °C °C Watts MRF5S19150R3 and MRF5S19150SR3 replaced by MRF5S19150HR3 and MRF5S19150HSR3. “H” suffix indicates lower thermal resistance package. 1990 MHz, 32 W, 28 V LATERAL N - CHANNEL RF POWER MOSFETs ARCHIVE INFORMATION Freescale Semiconductor, Inc. CASE 465B - 03, STYLE 1 NI - 880 MRF5S19150R3 CASE 465C - 02, STYLE 1 NI - 880S MRF5S19150SR3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 100 W CW Case Temperature 80°C, 32 W CW Symbol RθJC Value (1,2) 0.49 0.53 Unit °C/W (1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. (2) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf . Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MOTOROLA RF  Motorola, Inc. 2004 DEVICE DATA For More Information On This Product, For More Information On This Product, Go to: www.freescale.com Go to: www.freescale.com MRF5S19150R3 MRF5S19150SR3 1 ARCHIVE INFORMATION Freescale Semiconductor, Inc. ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Charge Device Model Class 1 (Minimum) M3 (Minimum) C7 (Minimum) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS IDSS IGSS — — — — — — 10 1 1 µAdc µAdc Symbol Min Typ Max Unit Freescale ARCHIVE Semiconductor, Inc. INFORMATION ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 360 µAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1400 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 3.6 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 3.6 Adc) DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Crss — 3.1 — pF VGS(th) VGS(Q) VDS(on) gfs 2.5 — — — 2.8 3.8 0.24 9 3.5 — — — Vdc Vdc Vdc S FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. Peak/Avg = 9.8 dB @ 0.01% Probability on CCDF. Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 32 W Avg, IDQ = 1400 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 32 W Avg, IDQ = 1400 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 32 W Avg, IDQ = 1400 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and f2 +2.5 MHz referenced to carrier channel power.) Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 32 W Avg, IDQ = 1400 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR measured over 30 kHz Bandwidth at f1 - 885 MHz and f2 +885 MHz) Input Return Loss (VDD = 28 Vdc, Pout = 32 W Avg, IDQ = 1400 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) (1) Part is internally matched both on input and output. Gps 13 14 — dB η 24 26 — % IM3 — - 36.5 - 35 dBc ACPR — - 50 - 48 dBc IRL — - 17 -9 dB MRF5S19150R3 MRF5S19150SR3 For More Information On This Product, 2 MOTOROLA RF DEVICE DATA Go to: www.freescale.com ARCHIVE INFORMATION Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) µAdc Freescale Semiconductor, Inc. + C9 R1 VGG R2 + C8 C7 C6 C5 C14 Z11 RF INPUT Z8 Z1 Z2 C1 Z3 C2 Z4 C4 C3 Z5 Z6 Z7 Z12 Z9 DUT Z10 Z13 Z14 C24 Z15 RF OUTPUT R3 C15 C16 + C21 + C22 B1 C17 C18 + C19 + C20 VDD + C23 ARCHIVE INFORMATION Freescale Semiconductor, Inc. B2 + C10 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 1.023″ 0.398″ 0.203″ 0.074″ 0.630″ 0.557″ 0.103″ 1.280″ C11 C12 Microstrip Microstrip Microstrip Microstrip Microstrip x 0.237″ Microstrip Taper Microstrip Microstrip Z9 Z10 Z11 Z12 Z13 Z14 Z15 PCB R4 C13 C25 C28 C29 + C30 + C31 x 0.082″ x 0.082″ x 0.082″ x 0.082″ x 0.084″ x 1.030″ x 1.030″ x 0.046″ 1.280″ x 0.046″ Microstrip 0.090″ x 1.055″ Microstrip 1.125″ x 0.068″ Microstrip 1.125″ x 0.068″ Microstrip 0.505″ x 1.055″ Microstrip 0.898″ x 0.105″ Microstrip 1.133″ x 0.082″ Microstrip Arlon GX0300 - 55 - 22, 0.03″, εr = 2.55 Figure 1. MRF5S19150 Test Circuit Schematic Table 1. MRF5S19150 Test Circuit Component Designations and Values Part B1, B2 C1, C2 C3 C4, C5, C13, C14, C24, C25 C8, C10 C6, C12, C16, C17, C18, C27, C28, C29 C7, C11, C15, C26 C9 C23 C19, C20, C21, C22, C30, C31, C32, C33 R1 R2 R3, R4 Short RF Beads 0.6 – 4.5 Variable Capacitors, Gigatrim 0.8 pF Chip Capacitor, B Case 9.1 pF Chip Capacitors, B Case 1.0 µF, 50 V SMT Tantalum Capacitors 0.1 µF Chip Capacitors, B Case 1000 pF Chip Capacitors, B Case 100 µF, 50 V Electrolytic Capacitor 470 µF, 63 V Electrolytic Capacitor 22 µF, 35 V Tantalum Capacitors 1 kW Chip Resistor 560 kW Chip Resistor 12 W Chip Resistors Description MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF5S19150R3 MRF5S19150SR3 3 ARCHIVE INFORMATION C26 C27 + C32 + C33 Freescale Semiconductor, Inc. C17 C18 C9 B1 R3 VGG R2 R1 C15 C8 C7 C6 C16 C21 C22 C24 CUT OUT AREA C5 VDD C14 C19 C20 C23 C4 C1 C2 C10 C3 C11 C12 C32 C33 C26 C27 Freescale ARCHIVE Semiconductor, Inc. INFORMATION B2 MRF5S19150 Rev 4 R4 C13 C25 C30 C31 C28 C29 Figure 2. MRF5S19150 Test Circuit Component Layout MRF5S19150R3 MRF5S19150SR3 For More Information On This Product, 4 MOTOROLA RF DEVICE DATA Go to: www.freescale.com ARCHIVE INFORMATION Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS η, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) −10 −20 −30 −40 −50 −60 15 14 13 G ps , POWER GAIN (dB) 12 11 10 9 8 7 6 ACPR IM3 1.228 MHz Channel Bandwidth Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF) IRL VDD = 28 Vdc, Pout = 32 W (Avg.), IDQ = 1400 mA 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing Gps η 40 35 30 25 20 −30 −35 −40 −45 −50 1920 1940 1960 1980 2000 −55 2020 ARCHIVE INFORMATION Freescale Semiconductor, Inc. f, FREQUENCY (MHz) Figure 3. 2 - Carrier N - CDMA Broadband Performance 16 IDQ = 2100 mA 15 G ps , POWER GAIN (dB) 1700 mA 1400 mA 14 1050 mA 13 700 mA 12 11 1 VDD = 28 Vdc f1 = 1958.75 MHz, f2 = 1961.25 MHz Two−Tone Measurement, 2.5 MHz Tone Spacing 10 Pout, OUTPUT POWER (WATTS) PEP 100 IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) −15 −20 −25 −30 −35 −40 700 mA −45 −50 1050 mA −55 1 10 100 Pout, OUTPUT POWER (WATTS) PEP 1400 mA IDQ = 2100 mA 1700 mA VDD = 28 Vdc f1 = 1958.75 MHz, f2 = 1961.25 MHz Two−Tone Measurement, 2.5 MHz Tone Spacing Figure 4. Two - Tone Power Gain versus Output Power Figure 5. Third Order Intermodulation versus Output Power IMD, INTERMODULATION DISTORTION (dBc) −20 −25 Pout , OUTPUT POWER (dBm) −30 −35 −40 −45 7th Order −50 −55 −60 0.1 1 TWO−TONE SPACING (MHz) 10 VDD = 28 Vdc, Pout = 150 W (PEP), IDQ = 1400 mA Two−Tone Measurements, Center Frequency = 1960 MHz 5th Order 3rd Order 59 58 57 56 55 P1dB = 53.01 dBm (199.99 W) 54 53 52 51 50 49 35 36 37 38 39 VDD = 28 Vdc, IDQ = 1400 mA Pulsed CW, 8 µsec (on), 1 msec (off) Center Frequency = 1960 MHz 40 41 42 43 44 45 P3dB = 53.71 dBm (234.96 W) Pin, INPUT POWER (dBm) Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF5S19150R3 MRF5S19150SR3 5 ARCHIVE INFORMATION 5 1900 IRL, INPUT RETURN LOSS (dB) Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 45 40 35 30 25 20 15 10 5 0 1 10 Pout, OUTPUT POWER (WATTS) AVG., N−CDMA Gps ACPR VDD = 28 Vdc, IDQ = 1400 mA f1 = 1958.75 MHz, f2 = 1961.25 MHz 2 x N−CDMA, 2.5 MHz @ 1.2288 MHz Bandwidth Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF) IM3 −25 −30 −35 −40