N-Channel Enhancement-Mode Lateral MOSFETs

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF5S19130/D MRF5S19130R3 RF Power Field Effect Transistors MRF5S19130SR3 The RF MOSFET Line N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, IDQ = 1200 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured over a 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz. Distortion Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Output Power — 26 Watts Avg. Power Gain — 13 dB Efficiency — 25% IM3 — - 37 dBc ACPR — - 51 dB • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 28 Vdc, f1 = 1960 MHz, 110 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Qualified Up to a Maximum of 32 V Operation • Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MAXIMUM RATINGS Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature CW Operation Symbol VDSS VGS PD Tstg TJ CW Value 65 - 0.5, +15 324 1.85 - 65 to +150 200 110 Unit Vdc Vdc Watts W/°C °C °C Watts MRF5S19130R3 and MRF5S19130SR3 replaced by MRF5S19130HR3 and MRF5S19130HSR3. “H” suffix indicates lower thermal resistance package. 1990 MHz, 26 W AVG., 2 x N - CDMA, 28 V LATERAL N - CHANNEL RF POWER MOSFETs ARCHIVE INFORMATION Freescale Semiconductor, Inc. CASE 465B - 03, STYLE 1 NI - 880 MRF5S19130R3 CASE 465C - 02, STYLE 1 NI - 880S MRF5S19130SR3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 110 W CW Case Temperature 80°C, 26 W CW Symbol RθJC Max 0.54 0.60 Unit °C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MOTOROLA RF  Motorola, Inc. 2003 DEVICE DATA For More Information On This Product, For More Information On This Product, Go to: www.freescale.com Go to: www.freescale.com MRF5S19130R3 MRF5S19130SR3 1 ARCHIVE INFORMATION Freescale Semiconductor, Inc. ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Charge Device Model Class 2 (Minimum) M4 (Minimum) C7 (Minimum) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS IDSS IGSS — — — — — — 10 1 1 µAdc µAdc Symbol Min Typ Max Unit Freescale ARCHIVE Semiconductor, Inc. INFORMATION ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 µAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1200 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 3 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.7 — pF VGS(th) VGS(Q) VDS(on) gfs 2.5 — — — 2.8 3.8 0.26 7.5 3.5 — — — Vdc Vdc Vdc S FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. Peak/Avg = 9.8 dB @ 0.01% Probability on CCDF. Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 26 W Avg, IDQ = 1200 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 26 W Avg, IDQ = 1200 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 26 W Avg, IDQ = 1200 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and f2 +2.5 MHz referenced to carrier channel power.) Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 26 W Avg, IDQ = 1200 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR measured over 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz) Input Return Loss (VDD = 28 Vdc, Pout = 26 W Avg, IDQ = 1200 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) (1) Part is internally matched both on input and output. Gps 12 13 — dB η 23 25 — % IM3 — - 37 - 35 dBc ACPR — - 51 - 48 dBc IRL — - 15 -9 dB MRF5S19130R3 MRF5S19130SR3 For More Information On This Product, 2 MOTOROLA RF DEVICE DATA Go to: www.freescale.com ARCHIVE INFORMATION Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) µAdc Freescale Semiconductor, Inc. B1 R1 VGG + C10 R2 + C9 C6 C7 C8 C15 Z13 RF INPUT Z10 Z1 C1 C2 C3 C4 C5 B2 Z11 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z14 DUT Z12 Z15 Z16 Z17 Z18 Z19 Z20 Z21 C25 RF OUTPUT Z22 Z23 Z24 R3 + C16 C17 C18 C19 C20 + C21 + C22 + C23 + C24 VDD ARCHIVE INFORMATION Freescale Semiconductor, Inc. C11 C12 C14 C13 C26 C27 C28 C29 C30 C31 C32 C33 C34 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10, Z11 Z12 0.200″ 0.170″ 0.480″ 0.926″ 0.590″ 0.519″ 0.022″ 0.046″ 0.080″ 1.280″ 0.053″ x 0.085″ x 0.085″ x 0.085″ x 0.085″ x 0.085″ x 0.955″ x 0.955″ x 0.955″ x 0.955″ x 0.046″ x 1.080″ Microstrip Microstrip Microstrip Microstrip Microstrip x 0.160″ Taper Microstrip Microstrip Microstrip Microstrip Microstrip Z13, Z14 Z15 Z16 Z17 Z18 Z19 Z20 Z21 Z22 Z23 PCB 1.125″ x 0.068″ Microstrip 0.071″ x 1.080″ Microstrip 0.060″ x 1.080″ Microstrip 0.290″ x 1.080″ Microstrip 1.075″ x 0.825″ x 0.125″ Taper 0.635″ x 0.120″ Microstrip 0.185″ x 0.096″ Microstrip 0.414″ x 0.084″ Microstrip 0.040″ x 0.084″ Microstrip 0.199″ x 0.057″ Microstrip Arlon GX0300 - 55 - 22, 0.03″, εr = 2.55 Figure 1. MRF5S19130R3(SR3) Test Circuit Schematic Table 1. MRF5S19130R3(SR3) Test Circuit Component Designations and Values Part B1, B2 C1 C2, C4 C3 C5 C8, C13 C9, C11 C10 C6, C14, C17, C18, C19, C28, C29, C30 C7, C12, C16, C27 C15, C26 C20, C21, C22, C23, C31, C32, C33, C34 C24 C25 R1 R2 R3, R4 Description Short RF Bead 0.8 pF Chip Capacitor, B Case 0.6 – 4.5 pF Gigatrim Variable Capacitors 2.2 pF Chip Capacitor, B Case 1.7 pF Chip Capacitor, B Case 9.1 pF Chip Capacitors, B Case 1 µF, 25 V Tantalum Capacitors 47 µF, 50 V Electrolytic Capacitor 0.1 µF Chip Capacitors, B Case 1000 pF Chip Capacitors, B Case 8.2 pF Chip Capacitors, B Case 22 µF, 35 V Tantalum Capacitors 470 µF, 63 V Electrolytic Capacitor 6.2 pF Chip Capacitor, B Case 1 kW Chip Resistor 560 kW Chip Resistor 12 W Chip Resistors Value, P/N or DWG 95F786 100B0R8BP 500X 44F3358 100B2R2BP 500X 100B1R7BP 500X 100B9R1CP 500X 92F1845 51F2913 CDR33BX104AKWS 100B102JP 500X 100B8R2CP 500X 92F1853 95F4579 100B6R2CP 500X D5534M07B1K00R CR1206 564JT RM73B2B120JT Manufacturer Newark ATC Newark ATC ATC ATC Newark Newark Kemet ATC ATC Newark Newark ATC Newark Newark Garrett Electtonics MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF5S19130R3 MRF5S19130SR3 3 ARCHIVE INFORMATION + R4 + + + + Freescale Semiconductor, Inc. C18 C10 R1 VGG C16 R2 C9 C7 C17 C6 C22 C23 B1 R3 C8 VDD MRF5S19130 Rev 5 C15 C19 C20 C21 C24 C1 C2 C3 C4 C5 C11 C14 C12 CUT OUT AREA C25 Freescale ARCHIVE Semiconductor, Inc. INFORMATION C28 C27 B2 R4 C13 C26 C29 C30 C31 C32 Figure 2. MRF5S19130R3(SR3) Test Circuit Component Layout MRF5S19130R3 MRF5S19130SR3 For More Information On This Product, 4 MOTOROLA RF DEVICE DATA Go to: www.freescale.com ARCHIVE INFORMATION C33 C34 Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS η, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) −5 −10 −15 −20 −25 −30 15 14 G ps , POWER GAIN (dB) 13 12 11 10 9 8 7 6 ACPR IM3 IRL Gps η VDD = 28 Vdc, Pout = 26 W (Avg.), IDQ = 1200 mA 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing 1.2288 MHz Channel Bandwidth Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF) 40 35 30 25 20 −10 −20 −30 −40 −50 ARCHIVE INFORMATION Freescale Semiconductor, Inc. f, FREQUENCY (MHz) Figure 3. 2 - Carrier N - CDMA Broadband Performance 16 IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) 15 G ps , POWER GAIN (dB) 14 1500 mA 13 12 11 600 mA 10 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 200 1200 mA 900 mA VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz Two−Tone Measurement, 2.5 MHz Tone Spacing IDQ = 1800 mA −25 −30 −35 IDQ = 1800 mA −40 600 mA −45 −50 −55 900 mA −60 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 200 1200 mA 1500 mA VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz Two−Tone Measurement, 2.5 MHz Tone Spacing Figure 4. Two - Tone Power Gain versus Output Power Figure 5. Third Order Intermodulation Distortion versus Output Power IMD, INTERMODULATION DISTORTION (dBc) −20 −25 −30 −35 −40 −45 −50 −55 −60 0.1 7th Order VDD = 28 Vdc, Pout = 130 W (PEP), IDQ = 1200 mA Two−Tone Measurements, Center Frequency = 1960 MHz 1 TWO−TONE SPACING (MHz) 10 5th Order 3rd Order Pout , OUTPUT POWER (dBm) 60 59 58 57 56 55 54 53 52 51 50 49 48 35 36 37 38 P3dB = 53.11 dBm (205.57 W) P1dB = 52.54 dBm (179.61 W) Actual VDD = 28 Vdc, IDQ = 1200 mA Pulsed CW, 8 µsec (on), 1 msec (off) Center Frequency = 1960 MHz 39 40 41 42 43 44 45 Ideal Pin, INPUT POWER (dBm) Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power MOTOROLA RF DEVICE DATA For More Informat