CDMA and multicarrier amplifier applications

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF5S19130H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2 - Carrier N - CDMA Performance for VDD = 28 Volts, IDQ = 1200 mA, Pout = 26 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 13 dB Drain Efficiency — 25% IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Bandwidth ACPR @ 885 kHz Offset — - 51 dB in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 110 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 V Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF5S19130HR3 MRF5S19130HSR3 1930- 1990 MHz, 26 W AVG., 28 V 2 x N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 1 NI - 880 MRF5S19130HR3 CASE 465C - 02, STYLE 1 NI - 880S MRF5S19130HSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature CW Operation @ TC = 25°C Derate above 25°C Symbol VDSS VGS PD Tstg TC TJ CW Value - 0.5, +65 - 0.5, +15 438 2.50 - 65 to +150 150 200 160 1 Unit Vdc Vdc W W/°C °C °C °C W W/°C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 115 W CW Case Temperature 78°C, 26 W CW Symbol RθJC Value (1,2) 0.40 0.46 Unit °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF5S19130HR3 MRF5S19130HSR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Charge Device Model Class 2 (Minimum) M4 (Minimum) C7 (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1200 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 3 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.7 — pF VGS(th) VGS(Q) VDS(on) gfs 2.5 — — — 2.8 3.8 0.26 7.5 3.5 — — — Vdc Vdc Vdc S IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 26 W Avg., f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz, 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. Gps ηD IM3 ACPR IRL 12 23 — — — 13 25 - 37 - 51 - 15 — — - 35 - 48 -9 dB % dBc dBc dB MRF5S19130HR3 MRF5S19130HSR3 2 RF Device Data Freescale Semiconductor B1 R1 VBIAS + C10 R2 + C9 C6 C7 C8 C15 Z13 RF INPUT Z10 Z1 C1 C2 C3 C4 C5 B2 + C11 C12 C14 R4 C13 C26 C27 C28 C29 C30 + C31 + C32 + C33 + C34 Z11 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z14 DUT Z12 Z15 Z16 Z17 Z18 Z19 Z20 Z21 C25 RF OUTPUT Z22 Z23 Z24 R3 + C16 C17 C18 C19 C20 + C21 + C22 + C23 VSUPPLY + C24 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10, Z11 Z12 0.200″ x 0.085″ Microstrip 0.170″ x 0.085″ Microstrip 0.480″ x 0.085″ Microstrip 0.926″ x 0.085″ Microstrip 0.590″ x 0.085″ Microstrip 0.519″ x 0.955″ x 0.160″ Taper 0.022″ x 0.955″ Microstrip 0.046″ x 0.955″ Microstrip 0.080″ x 0.955″ Microstrip 1.280″ x 0.046″ Microstrip 0.053″ x 1.080″ Microstrip Z13, Z14 Z15 Z16 Z17 Z18 Z19 Z20 Z21 Z22 Z23 PCB 1.125″ x 0.068″ Microstrip 0.071″ x 1.080″ Microstrip 0.060″ x 1.080″ Microstrip 0.290″ x 1.080″ Microstrip 1.075″ x 0.825″ x 0.125″ Taper 0.635″ x 0.120″ Microstrip 0.185″ x 0.096″ Microstrip 0.414″ x 0.084″ Microstrip 0.040″ x 0.084″ Microstrip 0.199″ x 0.057″ Microstrip Arlon GX0300 - 55- 22, 0.03″, εr = 2.55 Figure 1. MRF5S19130HR3(SR3) Test Circuit Schematic Table 5. MRF5S19130HR3(SR3) Test Circuit Component Designations and Values Part B1, B2 C1 C2, C4 C3 C5 C8, C13 C9, C11 C10 C6, C14, C17, C18, C19, C28, C29, C30 C7, C12, C16, C27 C15, C26 C20, C21, C22, C23, C31, C32, C33, C34 C24 C25 R1 R2 R3, R4 Description Short RF Bead 0.8 pF Chip Capacitor 0.6 – 4.5 pF Gigatrim Variable Capacitors 2.2 pF Chip Capacitor 1.7 pF Chip Capacitor 9.1 pF Chip Capacitors 1 μF, 25 V Tantalum Capacitors 47 μF, 50 V Electrolytic Capacitor 0.1 μF Chip Capacitors 1000 pF Chip Capacitors 8.2 pF Chip Capacitors 22 μF, 35 V Tantalum Capacitors 470 μF, 63 V Electrolytic Capacitor 6.2 pF Chip Capacitor 1 kW Chip Resistor 560 kW Chip Resistor 12 W Chip Resistors Part Number 95F786 100B0R8BP 500X 44F3358 100B2R2BP 500X 100B1R7BP 500X 100B9R1CP 500X 92F1845 51F2913 CDR33BX104AKWS 100B102JP 500X 100B8R2CP 500X 92F1853 95F4579 100B6R2CP 500X D5534M07B1K00R CR1206 564JT RM73B2B120JT Manufacturer Newark ATC Newark ATC ATC ATC Newark Newark Kemet ATC ATC Newark Newark ATC Newark Newark Garrett Electtonics MRF5S19130HR3 MRF5S19130HSR3 RF Device Data Freescale Semiconductor 3 C18 C10 R1 VGG C16 R2 C9 C7 B1 R3 C8 MRF5S19130 Rev 5 C15 C19 C20 C21 C24 VDD C17 C6 C22 C23 C1 C2 C3 C4 C5 C11 C14 C12 CUT OUT AREA C25 C28 C27 C33 C34 B2 R4 C13 C26 C29 C30 C31 C32 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF5S19130HR3(SR3) Test Circuit Component Layout MRF5S19130HR3 MRF5S19130HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS ηD, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) −5 −10 −15 −20 −25 −30 IRL, INPUT RETURN LOSS (dB) 1500 mA 1200 mA 10 Pout, OUTPUT POWER (WATTS) PEP 15 14 G ps , POWER GAIN (dB) 13 12 11 10 9 8 7 6 ACPR IM3 IRL Gps ηD VDD = 28 Vdc, Pout = 26 W (Avg.), IDQ = 1200 mA 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing 1.2288 MHz Channel Bandwidth PAR = 9.8 dB @ 0.01% Probability (CCDF) 40 35 30 25 20 −10 −20 −30 −40 −50 5 −60 1900 1910 1920 1930 1940 1950 1960 1970 1980 1990 2000 f, FREQUENCY (MHz) Figure 3. 2 - Carrier N - CDMA Broadband Performance @ Pout = 26 Watts Avg. 16 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 15 G ps , POWER GAIN (dB) 14 1500 mA 13 12 11 600 mA 10 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 200 1200 mA 900 mA VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz Two−Tone Measurement, 2.5 MHz Tone Spacing IDQ = 1800 mA −25 −30 −35 IDQ = 1800 mA −40 600 mA −45 −50 −55 900 mA −60 1 100 200 VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz Two−Tone Measurement, 2.5 MHz Tone Spacing Figure 4. Two - Tone Power Gain versus Output Power Figure 5. Third Order Intermodulation Distortion versus Output Power IMD, INTERMODULATION DISTORTION (dBc) −20 −25 −30 −35 −40 −45 −50 −55 −60 0.1 7th Order VDD = 28 Vdc, Pout = 130 W (PEP), IDQ = 1200 mA Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 1960 MHz 1 TWO−TONE SPACING (MHz) 10 5th Order 3rd Order Pout , OUTPUT POWER (dBm) 60 59 58 57 56 55 54 53 52 51 50 49 48 35 36 37 38 P3dB = 53.11 dBm (205.57 W) P1dB = 52.54 dBm (179.61 W) Actual VDD = 28 Vdc, IDQ = 1200 mA Pulsed CW, 8 μsec (on), 1 msec (off) f = 1960 MHz 39 40 41 42 43 44 45 Ideal Pin, INPUT POWER (dBm) Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power MRF5S19130HR3 MRF5S19130HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 35 30 25 20 15 10 5 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. (N−CDMA) VDD = 28 Vdc, IDQ = 1200 mA f1 = 1958.75 MHz, f2 = 1961.25 MHz 2 x N−CDMA, 2.5 MHz @ 1.2288 MHz Channel Bandwidth PAR = 9.8 dB @ 0.01% Probability (CCDF) IM3 ηD ACPR −35 −40 −45 −50 −55 −60 −65 IM3 (dBc), ACPR (dBc) MTTF FACTOR (HOURS X AMPS2) 108 −30 109 107 Gps 106 105 100 120 140 160 180 200 220 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 8. 2 - Carrier N - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power Figure 9. MTTF Factor versus Junction Temperature N - CDMA TEST SIGNAL 0 −10 −20 −30 −40 (dB) −50 −60