The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF5S19100H Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 22 Watts Avg., Full Frequency Band. IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 13.9 dB Drain Efficiency — 25.5% IM3 @ 2.5 MHz Offset — - 36.5 dBc in 1.2288 MHz Channel Bandwidth ACPR @ 885 kHz Offset — - 50.7 dBc in 30 kHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. MRF5S19100HR3 MRF5S19100HSR3 1930- 1990 MHz, 22 W AVG., 28 V 2 x N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF5S19100HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF5S19100HSR3 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 269 1.54 - 65 to +150 150 200 Unit Vdc Vdc W W/°C °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 75°C, 100 W CW Case Temperature 70°C, 22 W CW Symbol RθJC Value (1) 0.64 0.65 Unit °C/W 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF5S19100HR3 MRF5S19100HSR3 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Charge Device Model Class 2 (Minimum) M3 (Minimum) C7 (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics (DC) Gate Threshold Voltage (VDS = 10 Vdc, ID = 240 μAdc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1000 mAdc) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2.4 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2.4 Adc) Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 28 Vdc, VGS = 0, f = 1.0 MHz) Crss — 2.2 — pF VGS(th) VGS(Q) VDS(on) gfs — — — — 2.7 3.7 0.26 6.3 — — — — Vdc Vdc Vdc S IDSS IDSS IGSS — — — — — — 10 1 1 μAdc μAdc μAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, Pout = 22 W Avg., f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz, 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. Gps ηD IM3 ACPR IRL 12.5 24 — — — 13.9 25.5 - 36.5 - 50.7 - 13 — — - 35 - 48 -9 dB % dBc dBc dB MRF5S19100HR3 MRF5S19100HSR3 2 RF Device Data Freescale Semiconductor B1 VBIAS R1 R2 + W1 VSUPPLY + C7 C8 + C9 + C10 R4 C11 C12 + C13 + C14 C3 C4 C5 R3 C6 Z9 Z6 RF INPUT Z1 Z2 C15 Z3 C16 C1 Z4 Z5 Z7 DUT Z8 Z10 Z11 Z12 C2 Z13 Z14 C17 RF OUTPUT Z1, Z3 Z2 Z4 Z5 Z6 Z7 Z8 0.140″ x 0.080″ Microstrip 0.450″ x 0.080″ Microstrip 0.525″ x 0.080″ Microstrip 0.636″ x 0.141″ Microstrip 0.650″ x 0.050″ Microstrip 0.320″ x 1.299″ Microstrip 0.091″ x 1.133″ Microstrip Z9 Z10 Z11 Z12 Z13 Z14 PCB 0.590″ x 0.071″ Microstrip 0.450″ x 1.133″ Microstrip 0.450″ x 0.141″ Microstrip 0.490″ x 0.080″ Microstrip 0.085″ x 0.080″ Microstrip 1.124″ x 0.080″ Microstrip Arlon GX - 0300- 55- 22, 0.030″, εr = 2.55 Figure 1. MRF5S19100HR3(SR3) Test Circuit Schematic Table 5. MRF5S19100HR3(SR3) Test Circuit Component Designations and Values Part B1 C1 C2 C3 C4, C12 C5, C11 C6 C7 C8 C9, C10, C13, C14 C15 C16 C17* R1 R2 R3, R4 W1 Short RF Bead 22 pF Chip Capacitor 10 pF Chip Capacitor 1 μF, 50 V Tantalum Capacitor 0.1 μF Chip Capacitors 1K pF Chip Capacitors 2.7 pF Chip Capacitor 4.3 pF Chip Capacitor 10 μF, 35 V Tantalum Capacitor 22 μF, 35 V Tantalum Capacitors 0.6 – 4.5 Gigatrim Variable Capacitor 2.2 pF Chip Capacitor 0.3 pF Chip Capacitor 1 kW Chip Resistor 560 kW Chip Resistor 12 W Chip Resistors 1 turn 14 gauge wire Description Part Number 95F786 100B220CP 500X 100B100CP 500X T494C105(1)050AS CDR33BX104AKWS 100B102JP 500X 100B2R7BP 500X 100B4R3JP 500X T494D106(1)035AS T494X226(1)035AS 44F3358 100B2R2BP 500X 100B0R3BP 500X D5534M07B1K00R CR1206 564JT RM73B2B120JT Manufacturer Newark ATC ATC Kemet Kemet ATC ATC ATC Kemet Kemet Newark ATC ATC Newark Newark Garrett Electronics * Need for part will vary from fixture to fixture. MRF5S19100HR3 MRF5S19100HSR3 RF Device Data Freescale Semiconductor 3 MRF5S19100 Rev 1 C6 VGG R1 B1 R2 C3 C4 C5 CUT OUT AREA R3 W1 C7 C8 C9 C10 C11 C12 R4 C13 C2 C14 VDD C1 C16 C15 C17 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF5S19100HR3(SR3) Test Circuit Component Layout MRF5S19100HR3 MRF5S19100HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS Gps ηD ηD, DRAIN EFFICIENCY (%) 15 14 13 G ps , POWER GAIN (dB) 12 11 10 9 IM3 8 7 6 ACPR 1.2288 MHz Channel Bandwidth PAR = 9.8 dB @ 0.01% Probability (CCDF) IRL VDD = 28 Vdc, Pout = 22 W (Avg.), IDQ = 1000 mA 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing 40 35 30 25 20 IM3 (dBc), ACPR (dBc) −30 −35 −40 −45 −50 −10 −15 −20 −25 −30 −35 5 −55 1860 1880 1900 1920 1940 1960 1980 2000 2020 2040 f, FREQUENCY (MHz) Figure 3. 2 - Carrier N - CDMA Broadband Performance 16 15 G ps , POWER GAIN (dB) 14 13 530 mA 12 11 10 1 VDD = 28 Vdc f1 = 1958.75 MHz, f2 = 1961.25 MHz Two−Tone Measurement, 2.5 MHz Tone Spacing 10 Pout, OUTPUT POWER (WATTS) PEP 100 IDQ = 1500 mA 1300 mA 1000 mA 760 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) −15 −20 −25 −30 −35 −40 −45 1000 mA −50 −55 1 760 mA 10 Pout, OUTPUT POWER (WATTS) PEP 100 530 mA IDQ = 1500 mA 1300 mA VDD = 28 Vdc f1 = 1958.75 MHz, f2 = 1961.25 MHz Two−Tone Measurement, 2.5 MHz Tone Spacing Figure 4. Two - Tone Power Gain versus Output Power Figure 5. Third Order Intermodulation Distortion versus Output Power IMD, INTERMODULATION DISTORTION (dBc) −25 Pout , OUTPUT POWER (dBm) −30 −35 −40 −45 −50 7th Order −55 0.1 1 TWO−TONE SPACING (MHz) 10 40 VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 1000 mA Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 1960 MHz 3rd Order 58 57 56 55 54 53 52 51 50 49 48 47 46 32 P3dB = 51.98 dBm (157.81 W) P1dB = 51.3 dBm (135.01 W) Actual Ideal 5th Order VDD = 28 Vdc, IDQ = 1000 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 1960 MHz 33 34 35 36 37 38 39 40 41 42 43 44 Pin, INPUT POWER (dBm) Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power MRF5S19100HR3 MRF5S19100HSR3 RF Device Data Freescale Semiconductor IRL, INPUT RETURN LOSS (dB) 5 TYPICAL CHARACTERISTICS ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 35 30 25 20 15 10 5 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. VDD = 28 Vdc, IDQ = 1000 mA f1 = 1958.75 MHz, f2 = 1961.25 MHz 2 x N−CDMA, 2.5 MHz @ 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) ηD IM3 −35 −42 −49 −56 −63 −70 75 IM3 (dBc), ACPR (dBc) −21 −28 109 MTTF FACTOR (HOURS x AMPS2) 108 ACPR Gps 107 106 100 120 140 160 180 200 220 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 8. 2 - Carrier N - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power Figure 9. MTTF Factor versus Junction Temperature N - CDMA TEST SIGNAL 100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK−TO−AVERAGE (dB) IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±885 kHz Offset. IM3 Measured in 1.2288 MHz Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. (dB) 0 −10 −20 −30 −40 −50 −60 −70 −80 −90 −100 −7.5 −ACPR in 30 kHz Integrated BW +ACPR in 30 kHz Integrated BW −IM3 in 1.2288 MHz Integrated BW +IM3 in 1.2288 MHz Integrated BW 1.2288 MHz Channel BW Figure 10. 2 - Carrier CCDF N - CDMA −6 −4.5 −3 −1.5 0 1.5 3 4.5 6 7.5 f, FREQUENCY (MHz) Figure 11. 2 - Carrier N - CDMA Spectrum MRF5S19100HR3 MRF5S19100HSR3 6 RF Device Data Freescale Semiconductor Zo = 10 Ω f = 1990 MHz Zload f