http://www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf


Motorola
Motorola

MRF150 Datasheet

N-CHANNEL MOS LINEAR RF POWER FET


MRF150 Datasheet Preview


( DataSheet : www.DataSheet4U.com )
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode
Designed primarily for linear large–signal output stages up to 150 MHz
frequency range.
Specified 50 Volts, 30 MHz Characteristics
Output Power = 150 Watts
Power Gain = 17 dB (Typ)
Efficiency = 45% (Typ)
Superior High Order IMD
IMD(d3) (150 W PEP) — – 32 dB (Typ)
IMD(d11) (150 W PEP) — – 60 dB (Typ)
100% Tested For Load Mismatch At All Phase Angles With
30:1 VSWR
D
Order this document
by MRF150/D
MRF150
150 W, to 150 MHz
N–CHANNEL MOS
LINEAR RF POWER
FET
G
S CASE 211–11, STYLE 2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VDGO
VGS
ID
PD
125
125
± 40
16
300
1.71
Vdc
Vdc
Vdc
Adc
Watts
W/°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Tstg – 65 to +150
TJ 200
°C
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC 0.6 °C/W
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 8
www©.DMaMtOoatSoTrhOoelaRe,tOI4nUcL..A1c9oR9m7F DEVICE DATA
www.DataSheet4U.com
MRF150
1
Page 1

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA)
Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0)
Gate–Body Leakage Current (VGS = 20 V, VDS = 0)
V(BR)DSS
125
— Vdc
IDSS
— 5.0 mAdc
IGSS
— 1.0 µAdc
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)
VGS(th)
1.0
3.0
5.0 Vdc
Drain–Source On–Voltage (VGS = 10 V, ID = 10 A)
Forward Transconductance (VDS = 10 V, ID = 5.0 A)
VDS(on)
1.0
3.0
5.0 Vdc
gfs 4.0 7.0 — mhos
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Ciss
Coss
— 400 —
— 240 —
pF
pF
Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Crss
40
pF
FUNCTIONAL TESTS (SSB)
Common Source Amplifier Power Gain
f = 30 MHz
(VDD = 50 V, Pout = 150 W (PEP), IDQ = 250 mA) f = 150 MHz
Gps
— 17 —
— 8.0 —
dB
Drain Efficiency
(VDD = 50 V, Pout = 150 W (PEP), f = 30; 30.001 MHz,
ID (Max) = 3.75 A)
η — 45 — %
Intermodulation Distortion (1)
(VDD = 50 V, Pout = 150 W (PEP),
f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 250 mA)
Load Mismatch
(VDD = 50 V, Pout = 150 W (PEP), f = 30; 30.001 MHz,
IDQ = 250 mA, VSWR 30:1 at all Phase Angles)
IMD(d3)
IMD(d11)
ψ
— – 32 —
— – 60 —
dB
No Degradation in Output Power
CLASS A PERFORMANCE
Intermodulation Distortion (1) and Power Gain
(VDD = 50 V, Pout = 50 W (PEP), f1 = 30 MHz,
f2 = 30.001 MHz, IDQ = 3.0 A)
GPS — 20 —
IMD(d3)
– 50
IMD(d9 – 13)
– 75
NOTE:
1. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.
dB
BIAS +
0 – 12 V
RF
INPUT
L1
C5 C6 C7
C8
R1
DUT
R3 C2
T1
T2
C4
C1
R2
C3
L2
C9
+
C10
+
50 V
RF
OUTPUT
C1 — 470 pF Dipped Mica
C2, C5, C6, C7, C8, C9 — 0.1 µF Ceramic Chip or
Monolythic with Short Leads
C3 — 200 pF Unencapsulated Mica or Dipped Mica
with Short Leads
C4 — 15 pF Unencapsulated Mica or Dipped Mica
with Short Leads
C10 — 10 µF/100 V Electrolytic
L1 — VK200/4B Ferrite Choke or Equivalent, 3.0 µH
L2 — Ferrite Bead(s), 2.0 µH
R1, R2 — 51 /1.0 W Carbon
R3 — 3.3 /1.0 W Carbon (or 2.0 x 6.8 /1/2 W in Parallel
T1 — 9:1 Broadband Transformer
T2 — 1:9 Broadband Transformer
Figure 1. 30 MHz Test Circuit (Class AB)
MRF150
2
MOTOROLA RF DEVICE DATA
Page 2

25 250
200
20 150 VDD = 50 V
100
15
VDD = 50 V
IDQ = 250 mA
10 Pout = 150 W (PEP)
50
00
250
200
40 V IDQ = 250 mA
10 20 30
5
150 VDD = 50 V
100
50
40
V
IDQ = 250 mA
00
2 5 10 20 50 100 200 0 1 2 3 4 5 6
f, FREQUENCY (MHz)
Pin, INPUT POWER (WATTS)
Figure 2. Power Gain versus Frequency
Figure 3. Output Power versus Input Power
– 30
– 35 150 MHz
– 40
d3
1000
800
VDS = 30 V
– 45
d5
– 50 600
15 V
VDD = 50 V, IDQ = 250 mA, TONE SEPARATION = 1 kHz
– 30
– 35 30 MHz
400
– 40 200
d3
– 45
– 50 d5
0
0 20 40 60 80 100 120 140 160
0
Pout, OUTPUT POWER (WATTS PEP)
5 10 15
ID, DRAIN CURRENT (AMPS)
20
Figure 4. IMD versus Pout
Figure 5. Common Source Unity Gain Frequency
versus Drain Current
10
8
6
4
2 VDS = 10 V
gfs = 5 mhos
0
0 2 4 6 8 10
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 6. Gate Voltage versus
Drain Current
MOTOROLA RF DEVICE DATA
MRF150
3
Page 3
Part Number MRF150
Manufactur Motorola
Description N-CHANNEL MOS LINEAR RF POWER FET
Total Page 6 Pages
PDF Download
MRF150 datasheet
Download PDF File
MRF150 datasheet
View Html for PC & Mobile


Related Datasheet

MRF150 , MRF150 , MRF150 , MRF150 , MRF150 , MRF150 , MRF150 , MRF150 , MRF1500 , MRF15030 , MRF15060 , MRF15060S , MRF1507 , MRF1507T1 , MRF15090 , MRF151 , MRF151 , MRF1511NT1 , MRF1511T1 , MRF1511T1 , MRF1513NT1 , MRF1513T1 , MRF1517NT1 , MRF1517T1 , MRF1518NT1 , MRF1518T1 , MRF1518T1 , MRF151A , MRF151G , MRF151G , MRF1535FNT1 , MRF1535FT1 , MRF1535FT1 , MRF1535NT1 , MRF1535T1 , MRF1535T1 , MRF154 , MRF154 , MRF1550FNT1 , MRF1550FT1 , MRF1550NT1 , MRF1550T1 , MRF157 , MRF157 , MRF1570FNT1 , MRF1570FT1 , MRF1570NT1 , MRF1570T1 , MRF158 , MRF158 ,

site map

webmaste! click here

contact us

Buy Components