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Motorola
Motorola

MRF137 Datasheet

N-CHANNEL MOS BROADBAND RF POWER FET


MRF137 Datasheet Preview


MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode
. . . designed for wideband large–signal output and driver stages up to
400 MHz range.
Guaranteed 28 Volt, 150 MHz Performance
Output Power = 30 Watts
Minimum Gain = 13 dB
Efficiency — 60% (Typical)
Small–Signal and Large–Signal Characterization
Typical Performance at 400 MHz, 28 Vdc, 30 W
Output = 7.7 dB Gain
100% Tested For Load Mismatch At All Phase Angles
With 30:1 VSWR
Low Noise Figure — 1.5 dB (Typ) at 1.0 A, 150 MHz
Excellent Thermal Stability, Ideally Suited For Class A
Operation
Facilitates Manual Gain Control, ALC and Modulation
Techniques
D
Order this document
by MRF137/D
MRF137
30 W, to 400 MHz
N–CHANNEL MOS
BROADBAND RF POWER
FET
G
MAXIMUM RATINGS
CASE 211–07, STYLE 2
S
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Drain–Gate Voltage
(RGS = 1.0 M)
VDGR
65
Vdc
Gate–Source Voltage
VGS ± 40 Vdc
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
ID 5.0 Adc
PD 100 Watts
0.571
W/°C
Storage Temperature Range
Operating Junction Temperature
Tstg – 65 to +150
TJ 200
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC 1.75 °C/W
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
MRF137
1
Page 1

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID = 10 mA)
V(BR)DSS
Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0)
Gate–Source Leakage Current (VGS = 20 V, VDS = 0)
IDSS
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 V, ID = 25 mA)
Forward Transconductance (VDS = 10 V, ID = 500 mA)
VGS(th)
gfs
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Ciss
Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Coss
Crss
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VDS = 28 Vdc, ID = 1.0 A, f = 150 MHz)
NF
Common Source Power Gain
(VDD = 28 Vdc, Pout = 30 W,
IDQ = 25 mA)
f = 150 MHz (Figure 1)
f = 400 MHz (Figure 14)
Drain Efficiency (Figure 1)
(VDD = 28 Vdc, Pout = 30 W, f = 150 MHz, IDQ = 25 mA)
Gps
η
Electrical Ruggedness (Figure 1)
(VDD = 28 Vdc, Pout = 30 W, f = 150 MHz, IDQ = 25 mA,
VSWR 30:1 at All Phase Angles)
ψ
Min Typ Max Unit
65 — — Vdc
— — 4.0 mAdc
— — 1.0 µAdc
1.0 3.0 6.0 Vdc
500 750
— mmhos
— 48 — pF
— 54 — pF
— 11 — pF
— 1.5 — dB
dB
13 16 —
— 7.7 —
50 60 — %
No Degradation in Output Power
BIAS
ADJUST
R3
R2
C6
R4
+
D1 C7 C8
RFC1
RFC2
C9 C10
+ VDD = 28 V
RF
INPUT
C1
L1
C2
R1
DUT
L2 L3
C3
C5
C4
RF
OUTPUT
C1 — Arco 403, 3.0– 35 pF, or equivalent
C2 — Arco 406, 15– 115 pF, or equivalent
C3 — 56 pF Mini–Unelco, or equivalent
C4 — Arco 404, 8.0– 60 pF, or equivalent
C5 — 680 pF, 100 Mils Chip
C6 — 0.01 µF, 100 V, Disc Ceramic
C7 — 100 µF, 40 V
C8 — 0.1 µF, 50 V, Disc Ceramic
C9, C10 — 680 pF Feedthru
D1 — 1N5925A Motorola Zener
L1 — 2 Turns, 0.29ID, #18 AWG Enamel, Closewound
L2 — 1–1/4 Turns, 0.2ID, #18 AWG Enamel, Closewound
L3 — 2 Turns, 0.2ID, #18 AWG Enamel, Closewound
RFC1 — 20 Turns, 0.30ID, #20 AWG Enamel, Closewound
RFC2 — Ferroxcube VK–200 — 19/4B
R1 — 10 k, 1/2 W Thin Film
R2 — 10 k, 1/4 W
R3 — 10 Turns, 10 k
R4 — 1.8 k, 1/2 W
Board — G10, 62 Mils
Figure 1. 150 MHz Test Circuit
MRF137
2
MOTOROLA RF DEVICE DATA
Page 2

50
f = 100 MHz
150 MHz
40
200 MHz
30
20
VDD = 28 V
10 IDQ = 25 mA
0
0 0.5 1 1.5 2
Pin, INPUT POWER (WATTS)
Figure 2. Output Power versus Input Power
20
f = 100 MHz
15
150 MHz
200 MHz
10
5
VDD = 13.5 V
IDQ = 25 mA
0
0 1234
Pin, INPUT POWER (WATTS)
Figure 3. Output Power versus Input Power
40
f = 400 MHz
IDQ = 25 mA
30
VDD = 28 V
20
VDD = 13.5 V
10
0
0 2 4 6 8 10
Pin, INPUT POWER (WATTS)
Figure 4. Output Power versus Input Power
50
40 Pin = 1 W
30 0.5 W
20 0.25 W
10
IDQ = 25 mA
f = 100 MHz
0
12 16 20 24 28
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 5. Output Power versus Supply Voltage
50
40 Pin = 1.5 W
30 0.75 W
20 0.5 W
10
IDQ = 25 mA
f = 150 MHz
0
12 16
20 24
28
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 6. Output Power versus Supply Voltage
50
40
Pin = 2 W
30 1.5 W
20
0.75 W
10
IDQ = 25 mA
f = 200 MHz
0
12 16 20 24 28
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 7. Output Power versus Supply Voltage
MOTOROLA RF DEVICE DATA
MRF137
3
Page 3

50
40
Pin = 8 W
30
5W
20
2W
10
IDQ = 25 mA
f = 400 MHz
0
12 16 20 24 28
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 8. Output Power versus Supply Voltage
30
VDD = 28 V
25 IDQ = 25 mA
Pin = CONSTANT
20
TYPICAL DEVICE SHOWN,
15 VGS(th) = 3 V
10
400 MHz
150 MHz
5
0
–9 –8
–6 –4 –2
0 123
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 9. Output Power versus Gate Voltage
3
TYPICAL DEVICE SHOWN,
VGS(th) = 3 V
2
VDS = 10 V
1
01 23 4 5 6 7
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Figure 10. Drain Current versus Gate Voltage
(Transfer Characteristics)
1.02
ID = 1.25 A
1A
1
750 mA
0.98
0.96
0.94 VDS = 28 V
25 mA
500 mA
200 mA
0.92
– 25
0 25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 11. Gate Source Voltage versus
Case Temperature
175
200
180
160
140
120
100
80
60
40
20
0
0
Coss
Ciss
Crss
VGS = 0 V
f = 1 MHz
10
5
2
1
0.5
4 8 12 16 20 24
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 12. Capacitance versus
Drain–Source Voltage
0.1
28 1
TC = 25°C
2 5 10 20
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
60
Figure 13. DC Safe Operating Area
100
MRF137
4
MOTOROLA RF DEVICE DATA
Page 4
Part Number MRF137
Manufactur Motorola
Description N-CHANNEL MOS BROADBAND RF POWER FET
Total Page 10 Pages
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