Description
UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MPSA92/93 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. FEATURES * High Collector-Emitter voltage: VCEO=-300V(UTC MPSA92) VCEO=-200V(UTC MPSA93) *Collector Dissipation: Pc(max)=625mW 1 TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified ) PARAMETER Collector-Base Voltage UTC MPSA92 UTC MPSA93 Collector-Emitter Voltage UTC MPSA92 UTC MPSA93 Emitter-Base Voltage Collector Dissipation (Ta=25°C) Derate Above 25℃ Collector Current Collector Dissipation (Tc=25°C) Derate Above 25℃ Junction Temperature Storage Temperature VCBO www.DataSheet4U.com SYMBOL VALUE -300 -200 UNIT V V -300 -200 -5 625 5 -500 1.5 12 150 -55 ~ +150 VCEO VEBO Pc Ic Pc Tj TSTG V mW mW/℃ mA W mW/℃ °C °C ELECTRICAL CHARACTERISTICS(Tj=25°C,unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage UTC MPSA92 UTC MPSA93 Collector-Emitter Breakdown Voltage UTC MPSA92 UTC MPSA93 Emitter-Base Breakdown Voltage Collector Cut-Off Current UTC MPSA92 UTC MPSA93 SYMBOL BVCBO TEST CONDITIONS Ic=-100µA, IE=0 MIN -300 -200 TYP MAX UNIT V BVCEO Ic=-1mA, IB=0 -300 -200 -5 -0.25 -0.25 V V µA BVEBO ICBO IE=-100µA, Ic=0 VCB=-200V, IE=0 VCB=-160V, IE=0 UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R201-019,A UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR PARAMETER Emitter Cut-Off Current DC Current Gain(note) SYMBOL IEBO hFE TEST CONDITIONS VEB=-3V, Ic=0 VCE=-10V, Ic=-1mA VCE=-10V, Ic=-10mA VCE=-10V, Ic=-30mA Ic=-20mA, IB=-2mA Ic=-20mA, IB=-2mA VCE=-20V, Ic=-10mA, f=100MHz VCB=-20V, IE=0 f=1MHz MIN 60 80 80 TYP MAX UNIT -0.10 µA Collector-Emitter Saturation Voltage VCE(sat)1 Base-Emitter Saturation Voltage VBE(sat)1 Current Gain Bandwidth Product fT Collector Base Capacitance Ccb UTC MPSA92 UTC MPSA93 Note:Pulse test: PW<300µs, Duty Cycle<2%, VCE(SAT)1<200mV(Class SIN) -0.5 -0.90 50 6 8 V V MHz pF TYPICAL PERFORMANCE CHARACTERISTICS Fig.1 DC Current Gain 3 10 4 -10 Fig.2 Saturation Voltage 2 10 Fig.3 Capacitance Ic=10*IB VCE(sat),VBE(sat) (mV) VCE=-10V DC current Gain,H FE 2 10 VCE(sat) VBE(sat) CIB(pF),CCB(pF) 3 -10 CIB 1 10 1 10 2 -10 CCB 0 10 0 -10 1 -10 2 -10 3 -10 4 -10 1 -10 0 -10 1 -10 2 -10 3 -10 4 -10 -1 -10 0 -10 1 -10 2 -10 Collector current, Ic(mA) Collector current, Ic(mA) Collector-Base voltage(V) Fig.4 Active-region safe operating area 3 -10 s 0.1m Fig.5 Current Gain Bandwidth product 3 10 1 .0 D Collector current, Ic(mA) Current gain bandwidth product(MHz) C al m °C er 25 Th c= T 5W n 1. atio it lim ms 2 -10 MPSA93 VCE=-20V f=100MHz 2 10 1 -10 625mW Thermal limitation Ta=25°C bonding breakdown limitation Tj=150°C 1 -10 0 -10 1 -10 MPSA92 2 -10 3 -10 1 10 0 -10 1 -10 2 -10 Collector-Emitter voltage ( v) Collector current, Ic(mA) UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R201-019,A UTC MPSA92 / 93 PNP EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R201-019,A

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MPSA93

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