High-Voltage NPN Transistors

MPSA44 High-Voltage NPN Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Total Device Dissipation T A =25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PD Tj www.DataSheet4U.com Value 400 400 5.0 200 0.625 150 -55 to +150 Unit Vdc Vdc Vdc mAdc W C C Tstg ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= 100 uAdc, IE=0) Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0) Collector Cutoff Current (VCE= 400 Vdc, IB =0) Collector Cutoff Current (VCB= 400 Vdc, IE=0) Emitter Cutoff Current (VEB= 4.0Vd c, IC =0) Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICE0 ICBO IEBO Min 400 400 5.0 Max 5.0 0.1 0.1 Unit Vdc Vdc Vdc uAdc uAdc uAdc WEITRON http://www.weitron.com.tw MPSA44 Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min WE IT R ON Max Unit On Characteristics DC Current Gain (IC= 1.0 mAdc, VCE=10Vdc) (IC= 10 mAdc, VCE= 10Vdc) (IC= 100 mAdc, VCE= 10Vdc) Collector-Emitter Saturation Voltage (IC= 10 mAdc, IB= 1.0 mAdc) (IC= 50 mAdc, IB= 5.0 mAdc) Base-Emitter Saturation Voltage (IC= 10 mAdc, IB= 1.0 mAdc) Current-Gain-Bandwidth Product (IC= 10 mAdc, VCE= 20 Vdc, f=30MHz) VCE(sat) HFE(1) HFE(2) HFE(3) 70 80 60 - 300 . - 0.2 0.3 Vdc VBE(sat) - 0.75 Vdc fT 50 - MHz WEITRON http://www.weitron.com.tw MPSA44 FIG1. FIG2. FIG3. FIG4. FIG5. FIG6. WEITRON http://www.weitron.com.tw MPSA44 TO-92 Outline Dimensions E unit:mm TO-92 H C J K G Dim A B C D E G H J K L Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50 B L WEITRON http://www.weitron.com.tw D A