NPN Silicon High Voltage Transistor

MCC Features l Through Hole Package l 150oC Junction Temperature
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MPSA44 NPN Silicon High Voltage Transistor 625mW Pin Configuration Bottom View C B E A TO-92 E Mechanical Data l Case: TO-92, Molded Plastic l Marking: A44 www.DataSheet4U.com B Maximum Ratings @ 25oC Unless Otherwise Specified Charateristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current(DC) Power Dissipation@TA=25oC Power Dissipation@TC=25oC Thermal Resistance, Junction to Ambient Air Thermal Resistance, Junction to Case Operating & Storage Temperature Symbol Value VCEO 400 VCBO 400 VEBO IC Pd Pd Rq JA C Unit V V V mA mW mW/oC W mW/oC o D 5.0 200 625 5.0 1.5 12 200 83.3 G DIMENSIONS C/W C/W o DIM A B C D E G Rq JC o Tj, TSTG -55~150 C INCHES MIN .175 .175 .500 .016 .135 .095 MAX .185 .185 --.020 .145 .105 MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE www.mccsemi.com MPSA44 MCC Characteristic Symbol Min Max Unit V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 400 400 5.0 — — — — — 0.1 0.1 Vdc Vdc Vdc µAdc µAdc ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 300 Vdc, IE = 0) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) ON CHARACTERISTICS(1) DC Current Gain(1) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc) Collector–Emitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE 70 80 60 VCE(sat) — — VBE(sat) — 0.2 0.3 0.75 Vdc 300 Vdc SMALL–SIGNAL CHARACTERISTICS Output Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Small–Signal Current Gain (IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. Cobo Cibo hfe — — 1.0 7.0 130 — pF pF — www.mccsemi.com MPSA44 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 160 140 hFE, DC CURRENT GAIN 120 100 80 60 40 20 1.0 2.0 25°C TA = 125°C VCE = 10 V 0.5 0.4 0.3 IC = 1.0 mA IC = 10 mA MCC IC = 50 mA TA = 25°C 0.2 0.1 0 10 -55°C 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) 200 300 30 100 300 1.0 k 3.0 k IB, BASE CURRENT (µA) 10 k 50 k Figure 1. DC Current Gain Figure 2. Collector Saturation Region 1.0 TA = 25°C 0.8 V, VOLTAGE (VOLTS) 0.6 0.4 0.2 0 0.1 VCE(sat) @ IC/IB = 10 VBE(sat) @ IC/IB = 10 1000 IC, COLLECTOR CURRENT (mA) 300 200 100 1.0 ms TA = 25°C TC = 25°C 100 µs 1.0 s VBE(on) @ VCE = 10 V 20 10 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT VALID FOR DUTY CYCLE ≤ 10% 2.0 MPSA44 200 500 2.0 0.3 30 3.0 10 1.0 IC, COLLECTOR CURRENT (mA) 100 300 1.0 1.0 20 50 10 100 5.0 VCE, COLLECTOR VOLTAGE (VOLTS) Figure 3. “On” Voltages Figure 4. Active Region — Safe Operating Area 100 50 C, CAPACITANCE (pF) 20 10 5.0 2.0 1.0 0.3 0.5 1.0 TA = 25°C f = 1.0 MHz 3.0 10 30 REVERSE BIAS (VOLTS) 100 300 Cob Cib Figure 5. Capacitance www.mccsemi.com