(MPSA05 / MPSA06) Driver NPN Transistors

www.DataSheet4U.com MPSA05 MPSA06 Driver NPN Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Total Device Dissipation TA=25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg MPSA05 60 60 4.0 500 0.625 150 -55 to +150 MPSA06 80 80 Unit Vdc Vdc Vdc mAdc W C C ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) MPSA05 MPSA06 Collector-Base Breakdown Voltage (IC= 100 uAdc, IE=0) MPSA05 MPSA06 Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0) Collector Cutoff Current (VCE= 50 Vdc, IB =0) MPSA05 (VCE= 60 Vdc, IB =0) MPSA06 Collector Cutoff Current (VCE= 60 Vdc, IB =0) MPSA05 (VCE= 80 Vdc, IB =0) MPSA06 Emitter Cutoff Current (VEB= 3.0Vd c, IC =0) Symbol V(BR)CEO Min 60 80 60 80 4.0 Max Unit Vdc V(BR)CBO V(BR)EBO ICE0 0.1 Vdc Vdc uAdc ICBO IEBO - 0.1 0.1 uAdc uAdc WEITRON http://www.weitron.com.tw www.DataSheet4U.com MPSA05 MPSA06 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (IC= 100 mAdc, VCE=1.0 Vdc) Collector-Emitter Saturation Voltage (IC= 100 mAdc, IB= 10 mAdc) Base-Emitter Saturation Voltage (IC= 100 mAdc, IB= 10 mAdc) Current-Gain-Bandwidth Product (IC= 10 mAdc, VCE= 2.0 Vdc, f=100 MHz) hFE (1) VCE(sat) VBE(sat) fT 100 100 - 0.25 1.2 Vdc Vdc - - MHz f T , CURRENT-GAIN - BANDWIDTH PRODUCT(MHz) 300 200 VCE = 2.0 V TJ = 25 C C, CAPACITANCE (pF) 80 60 40 Cibo 20 TJ = 25 C 100 70 50 30 2.0 3.0 10 8.0 6.0 Cobo 0.2 0.5 1.0 2.0 5.0 10 20 50 100 5.0 7.0 10 20 30 50 70 100 200 4.0 0.1 IC, COLLECTOR CURRENT (mA) VR , REVERSE VOL TAGE (VOLTS) F IG 1. C urrent-G ain B andwidth P roduc t F IG 2. C apac itanc e WEITRON http://www.weitron.com.tw www.DataSheet4U.com MPSA05 MPSA06 400 TJ = 125 C VCE = 1.0 V hFE , DC CURRENT GAIN 25 C -55 C 100 80 60 40 0.5 V, VOLTAGE (VOLTS) 200 1.0 TJ = 25 C VBE(sat) @ I C/IB = 10 0.8 0.6 VBE(on) @ V CE = 1.0 V 0.4 0.2 VCE(sat) @ I C/IB = 10 0 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1.0 2.0 5.0 10 20 50 100 200 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) F IG 3. DC C urrent G ain F IG 4. " ON" Voltages VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TJ = 25 C 0.8 IC = 50 mA IC = 100 mA IC = 250 mA IC = 500 mA R VB , TEMPERATURE COEFFICIENT (mV/ C) 1.0 -0.8 -1.2 0.6 -1.6 -2.0 R VB for VBE 0.4 0.2 0 IC = 10 mA -2.4 -2.8 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 0.5 1.0 2.0 5.0 10 20 50 100 200 500 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) F IG 5. C ollec tor S aturation R egion F IG 6. B as e-E mitter Temperature C oeffic ient WEITRON http://www.weitron.com.tw www.DataSheet4U.com MPSA05 MPSA05 TO-92 Outline Dimensions E unit:mm TO-92 H C J K G Dim A B C D E G H J K L Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50 B L WEITRON http://www.weitron.com.tw D A