PNP General Purpose Amplifier

MPS6534 Discrete POWER & Signal Technologies MPS6534 C BE TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 40 40 4.0 800 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max MPS6534 625 5.0 83.3 200 Units mW mW/°C °C/W °C/W © 1997 Fairchild Semiconductor Corporation MPS6534 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current I C = 10 mA, I B = 0 I C = 10 µA, I E = 0 I E = 10 µA, IC = 0 VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 60 °C 40 40 4.0 50 2.0 V V V nA µA ON CHARACTERISTICS* hFE DC Current Gain VCE = 1.0 V, IC = 10 mA VCE = 1.0 V, IC = 100 mA VCE = 10 V, IC = 500 mA IC = 100 mA, I B = 10 mA IC = 100 mA, I B = 10 mA 60 90 50 270 0.3 1.0 V V VCE( sat) VBE( sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Cob Output Capacitance VCB = 10 V, f = 1.0 MHz 6.0 pF *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%