(MPS6521 / MPS6523) Amplifier Transistors

www.DataSheet4U.com MPS6521 (NPN) MPS6523 (PNP) MPS6521 is a Preferred Device Amplifier Transistors Features • Voltage and Current are Negative for PNP Transistors • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector −Emitter Voltage MPS6521 MPS6523 Collector −Base Voltage MPS6521 MPS6523 Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg VCBO 40 − 4.0 100 625 5.0 1.5 12 −55 to +150 − 25 Vdc mAdc mW mW/°C W mW/°C °C 1 2 3 http://onsemi.com COLLECTOR 3 COLLECTOR 3 2 BASE 1 EMITTER 1 EMITTER Symbol VCEO NPN 25 − PNP − 25 Unit Vdc 2 BASE Vdc MARKING DIAGRAM TO−92 CASE 29−11 STYLE 1 MPS 652x AYWW G G THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient (Printed Circuit Board Mounting) Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MPS652x = Device Code x = 1 or 3 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MPS6521 MPS6521G MPS6521RLRA MPS6521RLRAG MPS6523 MPS6523G Package TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) Shipping † 5000 Units/Box 5000 Units/Box 2000/Tape & Reel 2000/Tape & Reel 5000 Units/Box 5000 Units/Box *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 1 March, 2006 − Rev. 3 Publication Order Number: MPS6521/D MPS6521 (NPN) MPS6523 (PNP) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 0.5 mAdc, IB = 0) Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 10 Vdc) (IC = 2.0 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc) (IC = 2.0 mAdc, VCE = 10 Vdc) Collector −Emitter Saturation Voltage (IC = 50 mAdc, IB = 5.0 mAdc) SMALL− SIGNAL CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Noise Figure (IC = 10 mAdc, VCE = 5.0 Vdc, RS = 10 k W, Power Bandwidth = 15.7 kHz, 3.0 dB points @ 10 Hz and 10 kHz) Cobo NF − − 3.5 3.0 pF dB hFE MPS6521 MPS6521 MPS6523 MPS6523 VCE(sat) 150 300 150 300 − − 600 − 600 0.5 Vdc − MPS6521 MPS6523 V(BR)CEO V(BR)EBO ICBO − − 0.05 0.05 25 4.0 − − Vdc Vdc mAdc Symbol Min Max Unit NPN MPS6521 EQUIVALENT SWITCHING TIME TEST CIRCUITS +3.0 V 300 ns DUTY CYCLE = 2% −0.5 V <1.0 ns +10.9 V 10 k 275 10 < t1 < 500 ms DUTY CYCLE = 2% 0 t1 +3.0 V +10.9 V 10 k CS < 4.0 pF* 275 CS < 4.0 pF* −9.1 V < 1.0 ns 1N916 *Total shunt capacitance of test jig and connectors Figure 1. Turn−On Time Figure 2. Turn−Off Time http://onsemi.com 2 MPS6521 (NPN) MPS6523 (PNP) TYPICAL NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) 20 IC = 1.0 mA en, NOISE VOLTAGE (nV) 300 mA BANDWIDTH = 1.0 Hz RS = 0 In, NOISE CURRENT (pA) 100 50 20 10 5.0 2.0 1.0 0.5 0.2 2.0 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 0.1 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 30 mA 10 mA IC = 1.0 mA 300 mA 100 mA BANDWIDTH = 1.0 Hz RS ≈ ∞ 10 7.0 5.0 10 mA 3.0 100 mA 30 mA Figure 3. Noise Voltage Figure 4. Noise Current NPN MPS6521 NOISE FIGURE CONTOURS (VCE = 5.0 Vdc, TA = 25°C) 500 k RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 2.0 dB 3.0 dB 4.0 dB 6.0 dB 10 dB BANDWIDTH = 1.0 Hz 1M 500 k 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 RS , SOURCE RESISTANCE (OHMS) BANDWIDTH = 1.0 Hz 1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1k 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1k Figure 5. Narrow Band, 100 Hz 500 k RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 10 20 30 50 70 100 200 300 500 700 1k 10 Hz to 15.7 kHz Figure 6. Narrow Band, 1.0 kHz Noise Figure is defined as: en2 ) 4KTRS ) In 2RS2 1 2 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman’s Constant (1.38 x 10−23 j/°K) T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms) NF + 20 log10 IC, COLLECTOR CURRENT (mA) Figure 7. Wideband http://onsemi.com 3 MPS6521 (NPN) MPS6523 (PNP) NPN MPS6521 TYPICAL STATIC CHARACTERISTICS 400 TJ = 125°C h FE , DC CURRENT GAIN 200 25°C −55 °C 80 60 40 0.004 0.006 0.01 VCE = 1.0 V VCE = 10 V 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100 100 Figure 8. DC Current Gain VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25°C IC, COLLECTOR CURRENT (mA) 0.8 IC = 1.0 mA 10 mA 50 mA 100 mA 100 TA = 25°C PULSE WIDTH = 300 ms 80 DUTY CYCLE ≤ 2.0% IB = 500 mA 400 mA 300 mA 200 mA 0.6 60 0.4 40 100 mA 20 0 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 40 Figure 9. Collector Saturation Region Figure 10. Collector Characteristics 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 0.1 TJ = 25°C θV, TEMPERATURE COEFFICIENTS (mV/°C) 1.4 1.6 0.8 *APPLIES for IC/IB ≤ hFE/2 25°C to 125°C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 1.0 V 0 *qVC for VCE(sat) − 55°C to 25°C −0.8 25°C to 125°C −1.6 qVB for VBE 0.2 − 55°C to 25°C 50 100 VCE(sat) @ IC/IB = 10 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 −2.4 0.1 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 11. “On” Voltages Figure 12. Temperature Coefficients http://onsemi.com 4 MPS6521 (NPN) MPS6523 (PNP) NPN MPS6521 TYPICAL DYNAMIC CHARACTERISTICS 300 200 100 70 50 30 20 10 7.0 5.0 3.0 1.0 2.0 td @ VBE(off) = 0.5 Vdc tr 1000 700 500 300 200 t, TIME (ns) 100 70 50 30 20 10 1.0 tf ts VCC = 3.0 V IC/IB = 10 TJ = 25°C t, TIME (ns) VCC = 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25°C 2.0 20 30 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 100 20 30 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 13. Turn−On Time f T, CURRENT−GAIN BANDWIDTH PRODUCT (MHz) Figure 14. Turn−Off Time 500 TJ = 25°C f = 100 MHz 300 200 C, CAPACITANCE (pF) VCE = 20 V 5.0 V 10 7.0 5.0 Cib Cob TJ = 25°C f = 1.0 MHz 3.0 2.0 100 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 15. Current−Gain — Bandwidth Product Figure 16. Capacitance 20 hie , INPUT IMPEDANCE (k Ω ) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 hfe ≈ 200 @ IC = 1.0 mA hoe , OUTPUT ADMITTANCE (m mhos) VCE = 10 Vdc f = 1.0 kHz TA = 25°C 200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 VCE = 10 Vdc f = 1.0 kHz TA = 25°C hfe ≈ 200 @ IC = 1.0 mA 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 Figure 17. Input Impedance Figure 18. Output Admittance http://onsemi.com 5 MPS6521 (NPN) MPS6523 (PNP) NPN MPS6521 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 P(pk) t1 t2 FIGURE 20 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) ZqJA(t) = r(t) w RqJA TJ(pk) − TA = P(pk) ZqJA(t) 5.0 k 10 k 20 k 50 k 100 k 0.01 0.01 0.02 500 1.0 k 2.0 k t, TIME (ms) Figure 19. Thermal Response 104 VCC = 30 Vdc IC, COLLECTOR CURRENT (nA) 103 102 101 100 10−1 10−2 ICBO AND ICEX @ VBE(off) = 3.0 Vdc ICEO DESIGN NOTE: USE OF THERMAL RESPONSE DATA −4 0 −2 0 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (°C) Figure 21. A train of periodical power pulses can be represented by the model as shown in Figure 20. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 19 was calculated for various duty cycles. To find ZqJA(t), multiply the value obtained from Figure 19 by the steady state value RqJA. Example: The MPS6521 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2) Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C. For more information, see ON Semiconductor Application Note AN569/D, available from the Literature Distribution Center or on our website at www.onsemi.com. The safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 22 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be ca