NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR

NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR ISSUE 2 – FEB 1994 FEATURES * HIGH fT=900MHz MIN * MAX CAPACITANCE=1pF * LOW NOISE 5dB APPLICATIONS * CORDLESS TELEPHONES * KEYLESS ENTRY SYSTEMS * WIDEBAND INSTRUMENTATION AMPLIFIERS * TELEMETRY * WIRELESS LANS * REMOTE METERING * TAGGING MPS5179 C B E E-Line TO92 Compatible www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Temperature Range Note: Spice model available SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg VALUE 20 12 2.5 50 500 -55 to +200 UNIT V V V mA mW °C PAGE NO MPS5179 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. 20 12 2.5 0.02 1.0 0.4 1.0 25 900 250 2000 1.0 25 3.0 300 14 5 15 ps dB dB MHz pF TYP. MAX. UNIT V V V µA µA CONDITIONS. IC= 1µ A, IE=0 IC= 3mA, IB=0 IE=10µ A, IC=0 VCB=15V, IE=0 VCB=15V, IE=0, Tamb=150°C IC=10mA, IB=1mA IC=10mA, IB=1mA IC=3mA, VCE=1V IC=5mA, VCE=6V, f=100MHz IE=0, VCB=10V, f=1MHz IC=2mA, VCE=6V, f=1KHz IE=2mA, VCE=6V, f=31.9MHz IC=1.5mA, VCE=6V RS=50Ω , f=200MHz IC=5mA, VCE=6V f=200MHz VCE(sat) VBE(sat) V V Static Forward hFE Current Transfer Ratio Transition Frequency Collector-Base Capacitance Small Signal Current Gain Collector Base Time Constant Noise Figure Common-Emitter Amplifier Power Gain fT Ccb hfe rb’Cc NF Gpe MPS5179