www.DataSheet4U.com
@vic
MMBTA94
SOT-23-3L Plastic-Encapsulate Transistors
SOT-23-3L
TRANSISTOR（ PNP ） 1. BASE 2. EMITTER 3. COLLECTOR
1.02
MMBTA94
FEATURES
Power dissipation PCM : 0.35 W （Tamb=25℃） Collector current ICM : -0.2 A Collector-base voltage V(BR)CBO : -400 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS （ Tamb=25 ℃ otherwise specified）
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V (BR) CBO V (BR) CEO V (BR) EBO ICBO ICEO IEBO hFE（1） DC current gain hFE（2） hFE（3） VCE (sat) Collector-emitter saturation voltage VCE (sat) Base-emitter saturation voltage Transition frequency VBE (sat) fT Test
0.95±0.025
2.80±0.05 1.60±0.05
unless
conditions MIN -400 -400 -5 -0.1 -5 -0.1 80 70 60 -0.2 -0.3 -0.75 50 V V V MHz 300 TYP MAX UNIT V V V μA μA μA
Ic= -100μA， IE=0 IC= -1 mA，IB=0 IE=-100μA，IC=0 VCB=-400 V, IE=0 VCE=-400 V, IB=0 VEB= -4 V, IC=0 VCE=-10V, IC=-10 mA VCE=-10V, IC=-1mA VCE=-10V, IC=-100 mA IC=-10 mA，IB=-1mA IC=-50 mA，IB=-5mA IC=-10 mA，IB= -1 mA VCE=-20V， IC=-10mA f =30MHz
MARKING:4D
Copyright @vic Electronics Corp.
1
Website http://www.avictek.com
0.35
2.92±0.05
1.9
