AMPLIFIER TRANSISTOR PNP SILICON TRANSISTOR

www.DataSheet4U.com UNISONIC TECHNOLOGIES CO., LTD MMBTA56 AMPLIFIER TRANSISTOR FEATURES 3 * Collector-Emitter Voltage: VCEO=-80V * Collector Dissipation: PD=350mW PNP SILICON TRANSISTOR 1 2 SOT-23 *Pb-free plating product number: MMBTA56L ORDERING INFORMATION Order Number Normal Lead Free Plating MMBTA56-AE3-R MMBTA56L-AE3-R Package SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel MMBTA56L-AE3-R (1)Packing Type (2)Package Type (3)Lead Plating (1) R: Tape Reel (2) AE3: SOT-23 (3) L: Lead Free Plating, Blank: Pb/Sn MARKING 2G www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 5 QW-R206-090,A MMBTA56 ABSOLUTE MAXIMUM RATINGS (TA=25 ) PNP SILICON TRANSISTOR PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage VEBO -4 V Collector Current - Continuous IC -500 mA 350 mW Total Device Dissipation(Note 1) PD 2.8 mW/ Derate Above 25 Junction Temperature TJ +150 Storage Temperature TSTG -55 ~ +150 Note 1. Device mounted on FR-4=1.6×1.6×0.06 in 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Thermal Resistance, Junction to Ambient SYMBOL θJA MAX 357 UNIT /W ELECTRICAL CHARACTERISTICS (Ta=25 , unless otherwise specified) PARAMETER OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 1) Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current ON CHARACTERISTICS DC Current Gain SYMBOL BVCEO BVEBO ICES ICBO hFE TEST CONDITIONS IC=-1.0mA, IB=0 IE=-100µA, Ic=0 VCE=-60V, IB=0 VCB=-80V, IE=0 IC=-10mA, VCE=-1V IC=-100mA, VCE=-1V IC=-100mA, IB=-10mA IC=-100mA, VCE=-1V MIN -80 -4 -0.1 -0.1 100 100 -0.25 -1.2 100 V V MHz TYP MAX UNIT V V µA µA Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter on Voltage VBE(ON) SMALL-SIGNAL CHARACTERISTICS IC=-10mA, VCE=-2V, Current Gain Bandwidth Product fT (Note2) f=100MHz Note 1: Pulse test: PW≤300µs, Duty Cycle≤2% 2: fT is defined as the frequency at which IhfeI extrapolates to unity. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R206-090,A MMBTA56 SWITCHING TIME TEST CIRCUITS PNP SILICON TRANSISTOR TURN-ON TIME VCC -1.0V +40V 100 5 .0µs TURN-OFF TIME VCC +VBB +40V OUTPUT CS 6.0pF +10V 0 tr =3.0ns 100 VIN 5.0µs RL RL OUTPUT CS 6.0pF VIN 5.0µF RB 100 RB 100 tr=3.0ns 5.0µF UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R206-090,A MMBTA56 TYPICAL CHARACTERISTICS 200 Current-Gain Bandwidth Product, f T (MHz) PNP SILICON TRANSISTOR Current -Gain Bandwidth Product 100 70 Capacitance TJ=25 Cibo Capacitance, C (pF) 100 70 50 30 VCE=-2.0V TJ=25 50 30 20 Cobo 10 7.0 5.0 -0.1-0.2 -0.5-10 -20 -5.0-10 -20 -50 -100 Reverse Voltage, VR (V) 20 -2.0-3.0 -5.0 -7.0-10 -20-30 -50-70-100 -200 Collector Current, I C (mA) 1.0K 700 500 Switching Time Active-Region Safe Operating Area -1.0K -700 -500 Collector Current, IC (mA) 1.0ms T C=25 s 0µ 10 Time, t (ns) 300 200 100 70 50 ts -300 -200 1.0s tf VCC=-40V 30 I C/IB=10 tr 20 I B1=I B2 T =25 t d@VBE(off )=-0.5V 10 J -5.0-7.0 -10 -20 -30-50-70-100-200-300-500 Collector Current IC (mA) , -100 TA=25 -70 -50 MMBTA55 -30 -20 MMBTA56 Current Limit Thermal Limit Second Breakdown Limit -10 -1.0 -2.0-3.0-5.0 -7.0-10 -20-30 -50 -70-100 Collector-Emitter Voltage, VCE (V) DC Current Gain 400 TJ=125 VCE=-1.0V -1.0 -0.8 Voltage, V 25 -55 -0.6 ON T J=125 Voltages DC Current Gain, hFE VBE(SAT )@I C/IB=10 200 VBE(ON)@VCE=-1.0V -0.4 -0.2 VCE(SAT) @IC/I B=10 100 80 60 40 -0.5 -1.0-2.0 -5.0-10 -20 -50 -100-200 -500 Collector Current IC (mA) , 0 -0.5 -1.0-2.0 -5.0 -10 -20 -50 -100-200-500 Collector Current, I C (mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R206-090,A MMBTA56 TYPICAL CHARACTERISTICS(Cont.) Collector Saturation Region Collector-Emitter Voltage, VCE (V) ) PNP SILICON TRANSISTOR -0.8 -0.6 -0.4 -0.2 IC= -100mA IC=-50 mA I C=-500 mA (mV/ -1.0 IC=TJ=125 250mA -0.8 -1.2 -1.6 Base-Emitter Temperature Coefficient Temperature Coefficient, R VB R -2.0 -2.4 VB for V BE 0 I C=-10mA -0.05 -0.1-0.2 -0.5-1.0-2.0-5.0 -10 -20 -50 Base Current, I B (mA) -2.8 -0.5 -1.0-2.0 -5.0 -10-20 -50-100-200 -500 Collector Current, IC (mA) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R206-090,A