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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-3L Plastic-Encapsulate Transistors
SOT-23-3L
MMBTA44
FEATURES Power dissipation
TRANSISTOR (NPN)
1. BASE 2. EMITTER 3. COLLECTOR
1. 02
0. 0. 95¡ À 025
2. 80¡ À 05 0. 1. 60¡ À0. 05
PCM:
0.35
W (Tamb=25℃)
1. 9
Collector current 0.2 A ICM: Collector-base voltage 400 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE(1) DC current gain HFE(2) HFE(3) VCE(sat) Collector-emitter saturation voltage VCE(sat) Base-emitter sataration voltage VBE(sat) IC=50 mA, IB=5mA IC=10 mA, IB= 1 mA VCE=20V, IC=10mA Transition frequency f
T
unless otherwise specified)
Test conditions MIN 400 400 5 0.1 5 0.1 80 70 60 0.2 0.3 0.75 V V V 300 TYP MAX UNIT V V V µA µA µA
Ic= 100µA, IE=0 IC= 1mA , IB=0 IE=100µA, IC=0 VCB=400V, IE=0 VCE=400V VEB= 4V, IC=0 VCE=10V, IC=10 mA VCE=10V, IC=1mA VCE=10V, IC=100 mA IC=10 mA, IB=1mA
50 f =30MHz
MHz
MARKING
3D
0. 35
2. 92¡ À0. 05
