SOT-23-3L Plastic-Encapsulate Transistors

www.DataSheet4U.com @vic MMBTA44 SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L MMBTA44 FEATURES TRANSISTOR（ NPN ） 1. BASE 2. EMITTER 3. COLLECTOR 1.02 Power dissipation PCM : 0.35 W （Tamb=25℃） Collector current ICM : 0.2 A Collector-base voltage V(BR)CBO : 400 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE（1） DC current gain HFE（2） HFE（3） VCE(sat) Collector-emitter saturation voltage VCE(sat) Base-emitter sataration voltage VBE(sat) 0.95±0.025 2.80±0.05 1.60±0.05 unless Test otherwise MIN specified） TYP MAX UNIT V V V 0.1 5 μA μA μA conditions Ic= 100μA ， IE=0 IC= 1 mA , IB=0 IC=0 IE=0 400 400 5 IE=100μA， VCB=400 V , VCE=400 V , VEB= 4 V , IC=0 80 70 60 0.1 300 VCE=10V , IC=10 mA VCE=10V, IC=1mA VCE=10V ,IC=100 mA IC=10 mA, IB=1mA IC=50 mA, IB=5mA IC=10 mA, IB= 1 mA VCE=20V, IC=10mA 0.2 0.3 0.75 0.35 V V V Transition frequency fT f =30MHz 50 MHz MARKING:3D Copyright @vic Electronics Corp. 1 Website http://www.avictek.com 2.92±0.05 1.9