Surface Mount Switching Multi-Chip Diode Array

www.DataSheet4U.com BAS16TDW MMBD4148TDW Surface Mount Switching Multi-Chip Diode Array P b Lead(Pb)-Free MULTI-CHIP DIODES 150m AMPERES 75 VOLTS Features: * Fast Switching Speed * Ultra-Small Surface Mount Package * For General Purpose Switching Applications * High Conductance Power Dissipation 65 1 4 2 3 Mechanical Data: * Case : SOT-363 * Case Material : Molded Plastic. UL Flammability Classification Ration 94V-0 * Moisture Sensitivity : Level 1 per J-STD-020C * Terminals : Solderable per MIL-STD-202, Method 208 * Polarity : See Diagram * Weight : 0.006 grams(appro) SOT-363 SOT-363 Outline Dimensions A Unit:mm SOT-363 4 6 5 BC 1 2 3 D E H K J L M Dim A B C D E H J K L M Min Max 0.10 0.30 1.15 1.35 2.00 2.20 0.65 REF 0.30 0.40 1.80 2.20 0.10 0.80 1.10 0.25 0.40 0.10 0.25 WEITRON http://www.weitron.com.tw 1/3 09-Feb-06 BAS16TDW MMBD4148TDW Maximum Ratings@ TA= 25°C unless otherwise specified Characteristic Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Note 1) Average Rectified Output Current (Note 1) Non-Repetitive Peak Forward Surge Current@ t = 1.0µs @ t = 1.0s Power Dissipation (Note 1) Thermal Resistant Junction to Ambient Air (Note 1) Operating Temperature Range Storage Temperature Range Symbol VRM VRRM VRWM VR VR(RMS) IFM IO IFSM PD RθJA Tj TSTG Value 100 75 53 300 150 2.0 1.0 200 625 +150 -55 to +150 Unit V V V mA mA A mW °C/W °C °C Notes:1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Reverse Breakdown Voltage (Note 2) IR = 100µA Forward Voltage (Note 2) IF = 1.0mA IF = 10mA IF = 50mA IF = 150mA Reverse Current (Note 2) VR = 75V VR = 75V, Tj = 150°C VR = 25V, Tj = 150°C VR = 20V Total Capacitance VR = 0V, f = 1.0MHz Reverse Recovery Time IF= IR=10mA, Irr=0.1 x IR, RL=100Ω Symbol V(BR)R Min 75 - Max 0.715 0.855 1.0 1.25 1.0 50 30 25 2.0 4.0 Unit V VF V IR - µA µA µA nA pF ns CT Trr - Notes:2. Short duration test pulse used to minimize self-heating effect. http://www.weitron.com.tw WEITRON 2/3 09-Feb-06 BAS16TDW MMBD4148TDW Device Marking Item BAS16TDW MMBD4148TDW Marking Eqivalent Circuit diagram 1 2 3 6 5 4 KA2 Typical Characteristics 1 IF,INSTANTANEOUS FORWARD CURRENT (mA) IR,INSTANTANEOUS REVERSE CURRENT (nA) 10000 TA = 150ºC TA = 125ºC 1000 0.1 TA = 150ºC TA = 75ºC TA = 25ºC TA = 0ºC TA = -40ºC 100 TA = 75ºC 0.01 10 TA = 25ºC TA = 0ºC 1 TA = -40ºC 0.001 1.0 0.5 1.5 0 VF,INSTANTANEOUS FORWARD VOLTAGE (V) 0.1 0 20 40 60 80 100 VR, REVERSE VOLTAGE(V) Fig.1 Typical Forward Characteristics Fig.2 Typical Reverse Characteristics 2.0 1.8 1.6 CT,TOTAL CAPACITANCE (pF) f = 1.0MHz 300 250 Pd,POWER DISSIPATION (mW) 0 30 20 VR,REVERSEVOLTAGE(V) 10 40 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 200 150 100 50 0 0 25 50 75 100 125 150 Fig.3 Typical Capacitancevs .Reverse Voltage Fig.4 Power Derating Curve, Total Package TA, AMBIENT TEMPERATURE (°C) http://www.weitron.com.tw WEITRON 3/3 09-Feb-06