L & S BAND GaAs FET

www.DataSheet4U.com MITSUBISHI SEMICONDUCTOR MGF0952P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=36.5dBm(TYP.) @f=2.15GHz,Pin=25Bm • High power gain Glp=13.5dB(TYP.) @f=2.15GHz • High power added efficiency ηadd=50%(TYP.) @f=2.15GHz,Pin=25dBm • Plastic Mold Lead-less PKG APPLICATION • For L/S Band power amplifiers Fig.1 QUALITY • GG RECOMMENDED BIAS CONDITIONS • Vds=10V • Ids=700mA • Rg=100Ω Delivery Tape & Reel(1.5K) (Ta=25°C) Absolute maximum ratings Symbol VGSO VGDO ID IGR IGF PT Tch Tstg Parameter Gate to sourcebreakdown voltage Gate to drain breakdown voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature Ratings -15 -15 3.5 -10 21 20.0 150 -40 to +150 (Ta=25°C) Unit V V A mA mA W °C °C Recommended maximum ratings Symbol Tch Parameter Cannel temperature Ratings 150 (Ta=25°C) Unit °C Electrical characteristics Symbol VGS(off) Po *1 ηadd GLP IM3 *1 *2 Parameter Gate to source cut-off voltage Output power Power added Efficiency Linear Power Gain 3 order Modulation Distortion Thermal Resistance *1 rd Test conditions VDS=3V,ID=12.6mA VDS=10V,ID=700mA,f=2.15GHz *1:Pin=25dBm, *2:Pin=15dBm *3:f1=2.15GHz,f2=2.16GHz Po(SCL)=25dBm ∆Vf Method Min. -1 35.0 -11 --- Limits Typ. -3 36.5 50 13.5 -42 4.5 Max. -5 ----6.5 Unit V dBm % dB dBc °C/W *3 Rth(ch-c) *1:Channel to case / Above parameters, ratings, limits are subject to change. (1/50) Mitsubishi Electric Mar./2005 MGF0952P TYPICAL CHARACTERISTICS Po,Gp,PAE vs. Pin 40 VD=10V 35 Idq=0.7A f=2.15GHz 60 50 Gp(dB) Po(dBm) 30 40 PAE(%) 25 30 20 20 15 10 10 10 15 20 Pin(dBm) 25 30 0 45 VD=10(V) Idq=0.7(A) 40 35 Pin=25dBm Po(dBm) 30 Pin=20dBm 25 Pin=15dBm 20 Pin=10dBm 15 Pin=5dBm 10 2.00 2.05 2.10 2.15 Freq(GHz) 2.20 2.25 2.30 (2/50) Mitsubishi Electric Mar./2005 MGF0952P TYPICAL CHARACTERISTICS IM3, IM5 vs. Po -20 VD=10V Idq=0.7A -25 f1=2.15GHz f2=2.16GHz -30 -35 IM3, IM5 (dBc) -40 -45 -50 -55 -60 -65 20 25 Po(Total) (dBm) 30 35 (3/50) Mitsubishi Electric Mar./2005 MGF0952P S PARAMETERS (Ta=25°C,VD=10V,ID=700mA) !freq. !(GHz) 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 2.20 2.40 2.60 2.80 3.00 3.20 3.40 3.60 3.80 4.00 4.20 4.40 4.60 4.80 5.00 5.20 5.40 5.60 5.80 6.00 6.20 6.40 6.60 6.80 7.00 S11 (mag) 0.941 0.945 0.945 0.946 0.948 0.949 0.945 0.943 0.944 0.946 0.946 0.945 0.945 0.942 0.950 0.945 0.942 0.940 0.942 0.942 0.941 0.941 0.940 0.939 0.938 0.936 0.936 0.933 0.932 0.933 0.931 0.930 0.931 (ang) -155.46 -161.45 -165.05 -167.53 -169.74 -170.98 -172.20 -173.14 -173.68 -174.29 -174.91 -175.53 -176.04 -176.30 -176.75 -178.34 -178.98 -179.40 179.63 178.51 177.39 176.53 175.20 173.69 172.28 171.29 169.82 167.83 166.34 165.13 163.73 162.01 160.33 S21 (mag) 3.198 2.434 1.970 1.656 1.383 1.223 1.097 0.998 0.918 0.855 0.802 0.755 0.717 0.681 0.658 0.624 0.600 0.581 0.562 0.543 0.525 0.511 0.495 0.481 0.467 0.457 0.449 0.440 0.430 0.424 0.421 0.420 0.418 (ang) 95.74 90.37 86.23 82.72 79.43 76.56 73.77 71.28 68.77 66.48 64.21 61.97 59.85 57.82 55.70 53.05 51.01 48.78 46.21 43.59 40.94 38.30 35.58 32.70 30.04 27.42 24.82 21.94 19.46 17.22 14.95 12.61 10.17 S12 (mag) 0.020 0.020 0.021 0.021 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.020 0.021 0.021 0.020 0.018 0.018 0.019 0.020 0.021 0.020 0.021 0.022 0.021 0.021 0.022 0.022 0.023 0.023 0.023 0.024 0.024 0.025 (ang) 14.53 12.33 12.00 10.97 11.07 11.75 9.96 10.52 11.92 12.32 11.26 10.49 10.21 8.73 5.23 4.47 12.59 16.08 13.00 12.22 9.78 8.54 6.78 4.96 3.17 1.75 0.51 -0.94 -1.38 -2.56 -2.05 -3.27 -2.88 S22 (mag) 0.775 0.777 0.777 0.776 0.784 0.783 0.782 0.783 0.782 0.782 0.781 0.781 0.780 0.780 0.785 0.783 0.778 0.776 0.776 0.778 0.779 0.779 0.780 0.783 0 784 0.786 0.790 0.792 0.794 0.797 0.801 0.804 0.807 (ang) -176.77 -176.95 -176.88 -176.62 -176.51 -176.15 -175.84 -175.41 -174.89 -174.38 -173.87 -173.41 -172.87 -172.57 -172.11 -172.82 -172.69 -172.55 -173.07 -173.71 -174.47 -175.57 -176.58 -177.54 -178.54 -179.32 179.87 178.97 178.44 178.03 177.89 177.64 177.45 TOP SIDE (0.2) BOTTOM 2-C0.2 2-R0.2 4.5+/-0.15 0952P 4.0 3.4+/-0.15 0.9+/-0.1 0.12 0.45 1.48 2.26 0.2+/-0.1 a:Gate b:Drain c:Source Unit:mm Tolerance:+/-0.05mm 0.68 1.08 2.10 0.20 Reference Point Fig1. OUTLINE DRAWING (4/50) Mitsubishi Electric Mar./2005 1.8 3.0 a Lot.No b (0.6) (3.9) b c a 70mm (5/50) Mitsubishi Electric 70mm Mar./2005 MGF0952P RF TEST DATA(CW) VD=10V,Idq=0.7A Gp,Po,Id(RF),Ig(RF) v.s. Pin Gp v.s. Pin freq.=2.5GHz 40 35 Id(RF)(A) Po(dBm) 30 25 20 15 Tc=80deg.c Tc=25deg.c Tc=-20deg.c Po v.s. Pin freq.=2.5GHz Id(RF) v.s. Pin freq.=2.5GHz 1.2 1.0 Ig(RF)(mA) 0.8 0.6 0.4 18 16 14 12 10 8 6 4 2 0 -2 5 13 12 11 10 9 8 7 6 5 4 3 5 Ig(RF) v.s. Pin freq.=2.5GHz Tc=80deg.c Tc=25deg.c Tc=-20deg.c Gp(dB) Tc=80deg.c Tc=25deg.c Tc=-20deg.c Tc=80deg.c 0.2 0.0 Tc=25deg.c Tc=-20deg.c 10 15 20 25 30 35 5 10 15 20 25 30 35 5 10 15 20 25 30 35 10 15 20 25 30 35 Pin(dBm) Ig(RF) v.s. Pin freq.=2.6GHz Tc=80deg.c Tc=25deg.c Tc=-20deg.c Pin(dBm) Gp v.s. Pin 13 12 11 10 9 8 7 6 5 4 3 5 10 freq.=2.6GHz 40 35 Pin(dBm) Po v.s. Pin freq.=2.6GHz Pin(dBm) Id(RF) v.s. Pin freq.=2.6GHz 1.2 1.0 Id(RF)(A) Ig(RF)(mA) Tc=80deg.c Tc=25deg.c Tc=-20deg.c Po(dBm) 0.8 0.6 0.4 30 25 20 15 5 10 15 20 25 30 35 Pin(dBm) Po v.s. Pin 40 35 freq.=2.7GHz Tc=80deg.c Tc=25deg.c Tc=-20deg.c Tc=80deg.c Tc=25deg.c Tc=-20deg.c 0.2 0.0 5 10 15 20 18 16 14 12 10 8 6 4 2 0 -2 5 Gp(dB) 15 20 25 30 35 25 30 35 10 15 20 25 30 35 Pin(dBm) Ig(RF) v.s. Pin freq.=2.7GHz Pin(dBm) Gp v.s. Pin freq.=2.7GHz Pin(dBm) Id(RF) v.s. Pin freq.=2.7GHz 1.2 1.0 Ig(RF)(mA) Id(RF)(A) 0.8 0.6 0.4 Tc=80deg.c 13 12 11 10 9 8 7 6 5 4 3 5 10 30 25 Tc=80deg.c Tc=80deg.c Tc=25deg.c Tc=-20deg.c 20 15 Tc=25deg.c Tc=-20deg.c 0.2 0.0 Tc=25deg.c Tc=-20deg.c 18 16 14 12 10 8 6 4 2 0 -2 5 Tc=80deg.c Tc=25deg.c Tc=-20deg.c Gp(dB) Po(dBm) 15 20 25 30 35 5 10 15 20 25 30 35 5 10 15 20 25 30 35 10 15 20 25 30 35 Pin(dBm) Pin(dBm) Pin(dBm) Pin(dBm) MITSUBISHI ELECTRIC CORPORATION (6/50) Mar./2005 MGF0952P RF TEST DATA(W-CDMA) VD=10V,Idq=0.7A ACLR v.s. Po 3GPP TEST MODEL1 64ch's Single Signal ACLR -5MHz freq.=2.5GHz -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 ACLR -10MHz freq.=2.5GHz -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 Tc=80deg.C Tc=25deg.c Tc=-20deg.c ACLR(dBc) ACLR +5MHz freq.=2.5GHz -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 Tc=80deg.C Tc=25deg.c Tc=-20deg.c ACLR(dBc) ACLR +10MHz freq.=2.5GHz -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 Tc=80deg.C Tc=25deg.c Tc=-20deg.c Tc=80deg.C Tc=25deg.c Tc=-20deg.c ACLR(dBc) 10 15 20 25 30 35 40 Po(dBm) ACLR(dBc) 10 15 20 25 30 35 40 Po(dBm) ACLR -10MHz freq.=2.6GHz -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 Tc=80deg.C Tc=25deg.c Tc=-20deg.c ACLR(dBc) 10 15 20 25 30 35 40 10 15 20 25 30 35 40 Po(dBm) ACLR +5MHz freq.=2.6GHz -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 Tc=80deg.C Tc=25deg.c Tc=-20deg.c ACLR(dBc) Po(dBm) ACLR +10MHz freq.=2.6GHz -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 Tc=80deg.C Tc=25deg.c Tc=-20deg.c ACLR -5MHz freq.=2.6GHz -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 Tc=80deg.C Tc=25deg.c Tc=-20deg.c ACLR(dBc) 10 15 20 25 30 35 40 Po(dBm) ACLR -5MHz freq.=2.7GHz -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 Tc=80deg.C Tc=25deg.c Tc=-20deg.c ACLR(dBc) ACLR(dBc) 10 15 20 25 30 35 40 Po(dBm) ACLR -10MHz freq.=2.7GHz -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 Tc=80deg.C Tc=25deg.c Tc=-20deg.c ACLR(dBc) 10 15 20 25 30 35 40 10 15 20 25 30 35 40 Po(dBm) ACLR +5MHz freq.=2.7GHz -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 Tc=80deg.C Tc=25deg.c Tc=-20deg.c ACLR(dBc) Po(dBm) ACLR +10MHz freq.=2.7GHz -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 Tc=80deg.C Tc=25deg.c Tc=-20deg.c ACLR(dBc) 10 15 20 25 30 35 40 10 15 20 25 30 35 40 10 15 20 25 30 35 40 10 15 20 25 30 35 40 Po(dBm) Po(dBm) Po(dBm) Po(dBm) MITSUBISHI ELECTRIC CORPORATION (7/50) Mar./2005 MGF0952P RF TEST DATA(W-CDMA) ACLR v.s. Po 3GPP TEST MODEL1 64ch's Single Signal ACLR -5MHz freq.=2.5GHz VD=10V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 IDQ=0.7A IDQ=0.56A IDQ=0.42A IDQ=0.18A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15 ACLR -10MHz freq.=2.5GHz VD=10V IDQ=0.7A IDQ=0.56A IDQ=0.42A IDQ=0.18A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15 ACLR +5MHz freq.=2.5GHz VD=10V IDQ=0.7A IDQ=0.56A IDQ=0.42A IDQ=0.18A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15 ACLR +10MHz freq.=2.5GHz VD=10V IDQ=0.7A IDQ=0.56A IDQ=0.42A IDQ=0.18A ACLR(dBc) ACLR(dBc) ACLR(dBc) 15 20 25 30 35 Po(dBm) ACLR -5MHz freq.=2.5GHz VD=9V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15 IDQ=0.7A IDQ=0.56A IDQ=0.42A IDQ=0.18A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15 20 25 Po(dBm) 30 35 20 25 Po(dBm) 30 35 ACLR(dBc) 20 25 Po(dBm) 30 35 ACLR -10MHz freq.=2.5GHz VD=9V IDQ=0.7A IDQ=0.56A IDQ=0.42A IDQ=0.18A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 ACLR +5MHz freq.=2.5GHz VD=9V IDQ=0.7A IDQ=0.56A IDQ=0.42A IDQ=0.18A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 ACLR +10MHz freq.=2.5GHz VD=9V IDQ=0.7A IDQ=0.56A IDQ=0.42A IDQ=0.18A ACLR(dBc) ACLR(dBc) ACLR(dBc) 20 25 Po(dBm) 30 35 20 25 Po(dBm) 30 35 10 15 20 25 Po(dBm) 30 35 ACLR(dBc) 10 15 20 25 Po(dBm) 30 35 ACLR -5MHz freq.=2.5GHz VD=8V -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 10 15 IDQ=0.7A IDQ=0.56A IDQ=0.42A IDQ=0.18A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 ACLR -10MHz freq.=2.5GHz VD=8V IDQ=0.7A IDQ=0.56A IDQ=0.42A IDQ=0.18A -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 ACLR +5MHz freq.=2.5GHz