L & S BAND GaAs FET

www.DataSheet4U.com MITSUBISHI SEMICONDUCTOR MGF0951P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm • High power gain Glp=13dB(TYP.) @f=2.15GHz • High power added efficiency ηadd=50%(TYP.) @f=2.15GHz,Pin=20dBm • Plastic Mold Lead-less PKG APPLICATION • For L/S Band power amplifiers Fig.1 QUALITY • GG RECOMMENDED BIAS CONDITIONS • Vds=10V • Ids=200mA • Rg=500Ω Delivery Tape & Reel(1.5K) (Ta=25°C) Absolute maximum ratings Symbol VGSO VGDO ID IGR IGF PT Tch Tstg Parameter Gate to sourcebreakdown voltage Gate to drain breakdown voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature Ratings -15 -15 800 -2.5 5.4 6.0 150 -40 to +150 (Ta=25°C) Unit V V mA mA mA W °C °C Recommended maximum ratings Symbol Tch Parameter Cannel temperature Ratings 150 (Ta=25°C) Unit °C Electrical characteristics Symbol VGS(off) gm Po ηadd GLP IM3 *1 *2 Parameter Gate to source cut-off voltage Transconductance Output power Power added Efficiency Linear Power Gain 3rd order Modulation Distortion Thermal Resistance *1 Test conditions VDS=3V,ID=2.5mA VDS=3V,ID=300mA VDS=10V,ID=200mA,f=2.15GHz *1:Pin=20dBm, *2:Pin=10dBm *3:f1=2.15GHz,f2=2.16GHz Po(SCL)=20dBm ∆Vf Method Min. -1 -29.5 -11 --- Limits Typ. -3 200 31 50 13 -45 20 Max. -5 -----25 Unit V mS dBm % dB dBc °C/W *3 Rth(ch-c) *1:Channel to case / Above parameters, ratings, limits are subject to change. (1/42) Mitsubishi Electric Mar./2005 MGF0951P TYPICAL CHARACTERISTICS Po,Gp,PAE vs. Pin 35 Po 30 25 20 15 Gp 10 5 0 0 5 10 15 20 25 Pin (dBm) 20 10 0 PAE Vds=10V Ids(RFoff)=200mA f=2.15GHz 70 60 50 PAE (%) 40 30 Po (dBm) , Gp (dB) Po vs. freq. 35 33 31 29 Po (dBm) 27 25 23 21 19 17 15 1.95 Pin=5dBm Pin=10dBm Pin=15dBm Vds=10V Ids(RFoff)=200mA Pin=20dBm 2.05 2.15 freq. (GHz) 2.25 2.35 (2/42) Mitsubishi Electric Mar./2005 MGF0951P TYPICAL CHARACTERISTICS IM3 vs.Po -20 -25 -30 -35 IM3 IM3 (dBc) -40 -45 -50 -55 -60 -65 -70 15 20 25 Po (Total) (dBm) 30 IM5 Vds=10V Ids(RFoff)=200mA f1=2.15GHz f2=2.16GHz (3/42) Mitsubishi Electric Mar./2005 MGF0951P S PARAMETERS (Ta=25°C,VD=10V,ID=200mA) f (MHz) 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 3200 3400 3600 3800 4000 4200 4400 4600 4800 5000 5200 5400 5600 5800 6000 6200 6400 6600 6800 7000 Magn. 0.847 0.827 0.807 0.797 0.785 0.777 0.772 0.763 0.754 0.745 0.733 0.720 0.709 0.698 0.689 0.678 0.669 0.660 0.651 0.641 0.630 0.619 0.608 0.599 0.589 0.577 0.563 0.549 0.533 0.518 0.505 0.497 0.501 S11 Angle(deg.) -98.9 -115.4 -127.9 -137.6 -145.0 -151.3 -156.1 -160.3 -164.1 -167.7 -171.3 -175.0 -178.8 177.4 173.5 169.7 166.0 162.4 158.4 154.1 149.4 144.6 140.0 135.2 130.4 125.2 120.3 115.0 108.4 101.4 93.1 84.1 74.8 S Parameter(TYP.) S21 S12 Angle(deg.) Magn. Angle(deg.) 117.6 0.039 44.1 106.5 0.043 37.8 97.3 0.046 34.1 89.6 0.048 31.5 82.8 0.051 29.6 76.6 0.052 29.0 71.0 0.053 28.2 65.7 0.056 28.0 60.8 0.058 27.2 55.8 0.060 27.4 50.9 0.064 26.7 46.1 0.067 25.9 41.4 0.070 25.4 36.7 0.073 24.8 31.8 0.076 23.9 27.2 0.080 22.8 22.6 0.084 22.0 18.1 0.089 21.6 13.4 0.095 20.2 8.5 0.101 18.6 3.6 0.108 16.8 -1.2 0.114 15.0 -6.1 0.122 12.9 -11.1 0.129 10.5 -16.2 0.137 7.9 -21.3 0.146 5.1 -26.4 0.156 2.2 -31.6 0.165 -0.9 -37.1 0.177 -4.6 -42.9 0.189 -8.3 -48.9 0.201 -12.7 -55.3 0.213 -17.2 -61.9 0.226 -22.5 S22 Angle(deg.) -115.6 -126.0 -133.2 -137.7 -140.5 -142.7 -143.5 -144.3 -144.8 -145.3 -145.4 -145.3 -145.4 -146.1 -147.5 -148.9 -149.5 -150.5 -152.0 -154.4 -156.5 -158.4 -160.6 -163.5 -167.3 -170.5 -172.9 -175.5 -178.9 177.0 173.4 169.2 162.5 K 0.476 0.564 0.666 0.767 0.855 0.951 1.027 1.099 1.173 1.223 1.269 1.312 1.358 1.399 1.426 1.451 1.462 1.458 1.451 1.442 1.413 1.410 1.398 1.378 1.356 1.337 1.305 1.287 1.263 1.243 1.222 1.206 1.185 MSG/MAG (dB) 22.7 21.4 20.4 19.6 18.8 18.2 16.7 15.2 14.1 13.3 12.5 11.9 11.3 10.7 10.2 9.7 9.3 8.9 8.6 8.3 8.0 7.7 7.4 7.1 6.9 6.6 6.4 6.2 6.0 5.8 5.6 5.4 5.3 Magn. 7.176 5.972 5.076 4.392 3.867 3.450 3.127 2.865 2.655 2.485 2.342 2.223 2.114 2.023 1.939 1.867 1.807 1.756 1.715 1.677 1.640 1.604 1.572 1.543 1.512 1.486 1.466 1.453 1.440 1.427 1.417 1.403 1.386 Magn. 0.186 0.207 0.225 0.240 0.256 0.270 0.284 0.295 0.303 0.314 0.325 0.335 0.342 0.346 0.350 0.351 0.351 0.346 0.340 0.334 0.332 0.328 0.323 0.318 0.316 0.316 0.314 0.307 0.300 0.293 0.286 0.269 0.245 TOP SIDE BOTTOM 1.08 Lot No. 0951P 4.50 1.40 2.60 4.00 (0.60) a b b c a 3.40 0.45 0.89 1.48 2.26 a:Gate b:Dorain c:Source Unit:mm Fig1.OUTLINE DRAWING (4/42) Mitsubishi Electric 3.00 Mar./2005 VG MGF0951P TESTFIXTURE FREQ=2.15GHz VD 500ohm 5pF 51ohm 1000pF 4.7uF 1000pF 20pF 20pF Pin MGF 0 91 5P L t.N oo Pout Board Material:Teflon-Fiberglass,t=0.4m ,Er=2.6 m 70mm (5/42) Mitsubishi Electric Mar./2005 70mm 0.5pF 2pF 1pF MGF0951P RF TEST DATA(CW) VD=10V,Idq=0.2A Gp,Po,Id(RF),Ig(RF) v.s. Pin Gp v.s. Pin 13 12 11 Gp(dB) Po(dBm) 10 9 8 7 6 5 4 0 5 Tc=80deg.C Tc=25deg.C Tc=-20deg.C freq.=2.5GHz 34 32 30 28 26 24 22 20 18 16 14 12 10 Po v.s. Pin freq.=2.5GHz 0.5 0.4 Id(RF)(A) 0.3 0.2 0.1 0.0 Id(RF) v.s. Pin freq.=2.5GHz 0.5 0.0 Ig(RF)(mA) -0.5 -1.0 -1.5 -2.0 0 Ig(RF) v.s. Pin freq.=2.5GHz Tc=80deg.C Tc=25deg.C Tc=-20deg.C Tc=80deg.C Tc=25deg.C Tc=-20deg.C Tc=80deg.C Tc=25deg.C Tc=-20deg.C 10 15 20 25 30 0 5 10 15 20 25 30 0 5 10 15 20 25 30 5 10 15 20 25 30 Pin(dBm) Gp v.s. Pin 13 12 11 10 Po(dBm) Gp(dB) 9 8 7 6 5 4 0 5 10 15 20 25 30 Pin(dBm) Gp v.s. Pin 13 12 11 Po(dBm) 10 Gp(dB) 9 8 7 6 5 4 0 10 20 30 Pin(dBm) Tc=80deg.C Tc=25deg.C Tc=-20deg.C Tc=80deg.C Tc=25deg.C Tc=-20deg.C Pin(dBm) Po v.s. Pin 34 32 30 28 26 24 22 20 18 16 14 12 10 0 5 10 15 Pin(dBm) Po v.s. Pin 34 32 30 28 26 24 22 20 18 16 14 12 10 0 10 freq.=2.7GHz 0.5 0.4 Id(RF)(A) freq.=2.6GHz 0.5 0.4 Id(RF)(A) Pin(dBm) Id(RF) v.s. Pin freq.=2.6GHz 0.5 0.0 Ig(RF)(mA) -0.5 -1.0 -1.5 -2.0 0 5 Pin(dBm) P Ig(RF) v.s. Pin freq.=2.6GHz freq.=2.6GHz 0.3 0.2 0.1 0.0 Tc=80deg.C Tc=25deg.C Tc=-20deg.C Tc=80deg.C Tc=25deg.C Tc=-20deg.C Tc=80deg.C Tc=25deg.C Tc=-20deg.C 20 25 30 0 5 10 15 20 25 30 10 15 20 25 30 Pin(dBm) Id(RF) v.s. Pin freq.=2.7GHz 0.5 0.0 Ig(RF)(mA) -0.5 -1.0 -1.5 -2.0 0 Pin(dBm) Ig(RF) v.s. Pin freq.=2.7GHz freq.=2.7GHz 0.3 0.2 0.1 Tc=80deg.C Tc=25deg.C Tc=-20deg.C Tc=80deg.C Tc=25deg.C Tc=-20deg.C 0.0 0 10 Tc=80deg.C Tc=25deg.C Tc=-20deg.C 20 30 20 Pin(dBm) 30 10 20 30 Pin(dBm) Pin(dBm) MITSUBISHI ELECTRIC CORPORATION (6/42) Mar./2005 MGF0951P RF TEST DATA(CW) Gp,Po,Id(RF),Ig(RF) v.s. Pin Gp v.s. Pin freq.=2.5GHz VD=10V 13 12 11 Po(dBm) 10 Gp(dB) 9 8 7 6 5 4 0 5 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 10 15 20 25 30 34 32 30 28 26 24 22 20 18 16 14 12 10 0 5 Po v.s. Pin freq.=2.5GHz VD=10V 0.5 0.4 Id(RF)(A) 0.3 0.2 0.1 0.0 0 5 10 15 20 Pin(dBm) 25 30 Id(RF) v.s. Pin freq.=2.5GHz VD=10V IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A Ig(RF)(mA) 0.5 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 0 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 5 10 15 20 25 30 Ig(RF) v.s. Pin freq.=2.5GHz VD=10V IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 10 15 20 Pin(dBm) 25 30 Pin(dBm) Gp v.s. Pin freq.=2.5GHz VD=9V 13 12 11 Po(dBm) 10 Gp(dB) 9 8 7 6 5 4 0 5 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 10 15 20 Pin(dBm) 25 30 Pin(dBm) P Ig(RF) v.s. Pin freq.=2.5GHz VD=9V 0.5 0.0 -0.5 Ig(RF)(mA) -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 0 5 10 15 20 25 30 Pin(dBm) 34 32 30 28 26 24 22 20 18 16 14 12 10 0 Po v.s. Pin freq.=2.5GHz VD=9V 0.5 0.4 Id(RF)(A) 0.3 0.2 0.1 0.0 0 Id(RF) v.s. Pin freq.=2.5GHz VD=9V IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 5 10 15 20 25 30 5 Pin(dBm) Po v.s. Pin freq.=2.5GHz VD=8V 0.5 0.4 Id(RF)(A) 0.3 0.2 0.1 0.0 0 5 10 15 20 Pin(dBm) 25 30 13 12 11 10 9 8 7 6 5 4 0 Gp v.s. Pin freq.=2.5GHz VD=8V Id(RF) v.s. Pin freq.=2.5GHz VD=8V IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A Ig(RF)(mA) IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 5 10 15 20 25 30 34 32 30 28 26 24 22 20 18 16 14 12 10 0 0.5 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 Ig(RF) v.s. Pin freq.=2.5GHz VD=8V Po(dBm) Gp(dB) IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 5 10 15 20 25 30 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 0 5 10 15 20 Pin(dBm) 25 30 10 15 20 25 30 Pin(dBm) Pin(dBm) Pin(dBm) MITSUBISHI ELECTRIC CORPORATION (7/42) Mar./2005 MGF0951P RF TEST DATA(CW) Gp,Po,Id(RF),Ig(RF) v.s. Pin Gp v.s. Pin freq.=2.6GHz VD=10V 13 12 11 Po(dBm) 10 Gp(dB) 9 8 7 6 5 4 0 5 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 10 15 20 25 30 Po v.s. Pin freq.=2.6Hz VD=10V 0.5 0.4 Id(RF)(A) 0.3 0.2 0.1 0.0 0 5 10 15 20 25 30 Pin(dBm) Id(RF) v.s. Pin freq.=2.6GHz VD=9V 0.5 0.4 Id(RF)(A) 0.3 0.2 0.1 0.0 0 5 10 15 20 25 30 Pin(dBm) Id(RF) v.s. Pin freq.=2.6GHz VD=8V 0.5 0.4 Id(RF)(A) 0.3 0.2 0.1 0.0 0 5 10 15 20 25 30 0 5 10 15 20 25 30 Pin(dBm) Pin(dBm) IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A Ig(RF)(mA) 0.5 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 0 5 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 10 15 20 25 30 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A Ig(RF)(mA) 0.5 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 0 5 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 10 15 20 25 30 Id(RF) v.s. Pin freq.=2.6GHz VD=10V IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A Ig(RF)(mA) 0.5 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 0 Ig(RF) v.s. Pin freq.=2.6GHz VD=10V 34 32 30 28 26 24 22 20 18 16 14 12 10 0 IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 5 10 15 20 25 30 Pin(dBm) IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 5 10 15 20 25 30 Pin(dBm) Gp v.s. Pin freq.=2.6GHz VD=9V Pin(dBm) Ig(RF) v.s. Pin freq.=2.6GHz VD=9V 13 12 11 9 8 7 6 5 4 0 10 Gp(dB) IDQ=0.2A IDQ=0.16A IDQ=0.12A IDQ=0.05A 5 10 15 20 Pin(dBm) 25 30 34 32 30 28 26 24 22 20 18 16 14 12 10 0 Po v.s. Pin freq.=2.6Hz VD=9V Po(dBm)