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Part Number |
MCZ33395T |
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Manufacturer |
Freescale Semiconductor |
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Semiconductor DataSheet |
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DataSheet View |
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www.DataSheet4U.com Freescale Semiconductor
Document Number: MC33395
Technical Data
Rev 4.0, 2/2007
Three-Phase Gate Driver IC
The 33395 simplifies the design of high-power BLDC motor control design by combining the gate drive, charge pump, current sense, and protection circuitry necessary to drive a three-phase bridge configuration of six N-channel power MOSFETs. Mode logic is incorporated to route a pulse width modulation (PWM) or a complementary PWM output signal to either low-side or high-side MOSFETs of the bridge. Detection and drive circuitry are also incorporated to control a reverse battery protection high-side MOSFET switch. PWM frequencies up to 28 kHz are possible. Built-in protection circuitry prevents damage to the MOSFET bridge as well as the drive IC and includes overvoltage shutdown, overtemperature shutdown, overcurrent shutdown, and undervoltage shutdown. The device is parametrically specified over ambient temperature range of -40°C ≤ TA ≤ 125°C and 5.5 V ≤ VIGN ≤ 24 V supply. Features • Drives Six N-Channel Low RDS(ON) Power MOSFETs • Built-In Charge Pump Circuitry • Built-In Current Sense Comparator and Output Drive Current Limiting • Built-In PWM Mode Control Logic • Built-In Circuit Protection • Designed for Fractional to Integral HP BLDC Motors • 32-Pin SOIC Wide Body Surface Mount Package • 33395 Incorporates a <5.0 µs Shoot-Through Suppression Timer • 33395T Incorporates a <1.0 µs Shoot-Through Suppression Timer • Pb-Free Packaging Designated by Suffix Code EW
33395 33395T
THREE-PHASE GATE DRIVER IC
DWB SUFFIX EW SUFFIX (Pb-FREE) 98ARH99137A 32-PIN SOICW
ORDERING INFORMATION
Device MC33395DWB/R2 MC33395EW/R2 MCZ33395EW/R2 MC33395TDWB/R2 MC33395TEW/R2 - 40°C to 125°C 32 SOICW 32 SOICW (Pb-Free) Temperature Range (TA) Package 32 SOICW 32 SOICW (Pb-Free)
VPWR
33395
VDD VGDH VIGN VDD CP1H CP1L CP2H CP2L CRES 3 2 3 VIGNP GDH1 GDH2 GDH3 SRC1 SRC2 SRC3 N S N
H
S
H
H
MCU
HSE1–3 MODE0–1 GDL1 GDL2 PWM GDL3 LSE1–3 -ISENS AGND PGND +ISENS
VDD
Figure 1. 33395 Simplified Application Diagram
* This document contains certain information on a new product. Specifications and information herein are subject to change without notice. © Freescale Semiconductor, Inc., 2007. All rights reserved.
INTERNAL BLOCK DIAGRAM
INTERNAL BLOCK DIAGRAM
VIGN VDD Osc. Low Low Voltage Reset Reset Charge Charge Pump Overvoltage Overvoltage Shutdown CP1H CP1L CP2H CP2L CPRES +ISENS -ISENS + -
Drive Limiting Drive Limiting L H VGDH Control Control Logic Logic VIGNP Gate Drive Gate Circuits Drive Circuits GDH1 GDH2 GDH3 SRC1 SRC2 SRC3 GDL1 GDL2 GDL3
MODE0 MODE1 PWM HSE1 HSE2 HSE3 LSE1 LSE2 LSE3 AGND TEST PGND Overtemperature Shutdown Shutdown
Figure 2. 33395 Simplified Internal Block Diagram
33395
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Analog Integrated Circuit Device Data Freescale Semiconductor
PIN CONNECTIONS
PIN CONNECTIONS
CP2H CPRES VIGN VGDH VIGNP SRC1 GDH1 GDL1 SRC2 GDH2 GDL2 SRC3 GDH3 GDL3 PGND TEST
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
CP2L CP1H CP1L LSE1 LSE2 LSE3 HSE1 HSE2 HSE3 MODE0 MODE1 PWM VDD AGND +ISENS -ISENS
Figure 3. 33395 Pin Connections Table 1. 33395 Pin Definitions A functional description of each pin can be found in the Functional Pin Description section beginning on page 9.
Pin Number 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 Pin Name CP2H CPRES VIGN VGDH VIGNP SRC1 GDH1 GDL1 SRC2 GDH2 GDL2 SRC3 GDH3 GDL3 PGND Test -ISENS +ISENS AGND VDD PWM Input Input Output Input Sensor Output Output Sensor Output Output Sensor Output Output Ground N/A Input Input Ground Power Input Pin Function Formal Name Charge Pump Cap Charge Pump Reserve Cap Input Voltage High-Side Gate Voltage Input Voltage Protected High-Side Sense Gate Drive High Output for Gate High-Side Sense Gate Drive High Output for Gate High-Side Sense Gate Drive High Gate Drive Low Power Ground Test Pin IS Minus IS Plus Analog Ground Logic Supply Voltage Definition High potential pin connection for secondary charge pump capacitor Input from external reservoir capacitor for charge pump Input from ignition level supply voltage for power functions Output full-time gate drive for auxiliary high-side power MOSFET switch Input from protected ignition level supply for power functions Sense for high-side source voltage, phase 1 Output for gate high-side, phase 1 Output for gate drive low-side, phase 1 Sense for high-side source voltage, phase 2 Output for gate high-side, phase 2 Output for gate drive low-side, phase 2 Sense for high-side source voltage, phase 3 Output for gate drive high-side, phase 3 Output for gate drive low-side, phase 3 Ground pins for power functions This should be connected to ground or left open Inverting input for current limit comparator Non-inverting input for current limit comparator Ground pin for logic functions Supply voltage for logic functions
Pulse Width Modulator Input for pulse width modulated driver duty cycle
33395
Analog Integrated Circuit Device Data Freescale Semiconductor
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PIN CONNECTIONS
Table 1. 33395 Pin Definitions (continued) A functional description of each pin can be found in the Functional Pin Description section beginning on page 9.
Pin Number 22 23 24 25 26 27 28 29 30 31 32 Pin Name MODE1 MODE0 HSE3 HSE2 HSE1 LSE3 LSE2 LSE1 CP1L CP1H CP2L Pin Function Input Input Input Input Input Input Input Input Input Input Input Formal Name Mode Control Bit 1 Mode Control Bit 0 High-Side Enable High-Side Enable High-Side Enable Low-Side Enable Low-Side Enable Low-Side Enable External Pump Capacitor External Pump Capacitor Charge Pump Capacitor Definition Input for mode control selection Input for mode control selection Input for high-side enable logic, phase 3 Input for high-side enable logic, phase 2 Input for high-side enable logic, phase 1 Input for low-side enable logic, phase 3 Input for low-side enable logic, phase 2 Input for low-side enable logic, phase 1 Input from external pump capacitor for charge pump and secondary pins Input from external pump capacitor for charge pump and secondary pins Input from external reservoir, external pump capacitors for charge pump, and secondary pins
33395
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Analog Integrated Circuit Device Data Freescale Semiconductor
ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Table 2. Maximum Ratings All voltages are with respect to ground unless otherwise noted.
Rating VIGN Supply Voltage VIGNP Load Dump Survival VDD Logic Supply Voltage (Fail Safe) Logic Input Voltage (LSEn, HSEn, PWM, and MODEn) Start Up Current VIGNP ESD Voltage
(1)
Symbol VIGN VIGNP
LD
Value -15.5 to 40 -0.3 to 65 -0.3 to 7.0 0.3 to 7.0 100
Unit VDC VDC VDC VDC mA V
VDD VIN IVIGNSTARTUP
Human Body Model Machine Model Storage Temperature Operating Ambient Temperature Operating Case Temperature Maximum Junction Temperature Power Dissipation (TA = 25°C) Peak Package Reflow Temperature During Reflow Thermal Resistance, Junction-to-Ambient
(2) (3)
VESD1 VESD2 TSTG TA TC TJ PD , TPPRT RΘJA
±500 ±200 -65 to 160 -40 to 125 -40 to 125 150 1.5 Note 3 65 °C °C °C °C W °C °C/ W
Notes 1. ESD1 testing is performed in accordance with the Human Body Model (CZAP = 100 pF, RZAP = 1500 Ω), ESD2 testing is performed in accordance with the Machine Model (CZAP = 200 pF, RZAP = 0 Ω). 2. 3. Pin soldering temperature limit is for 10 seconds maximum duration. Not designed for immersion soldering. Exceeding these limits may cause malfunction or permanent damage to the device. Freescale’s Package Reflow capability meets Pb-free requirements for JEDEC standard J-STD-020C. For Peak Package Reflow Temperature and Moisture Sensitivity Levels (MSL), Go to www.freescale.com, search by part number [e.g. remove prefixes/suffixes and enter the core ID to view all orderable parts. (i.e. MC33xxxD enter 33xxx), and review parametrics.
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Analog Integrated Circuit Device Data Freescale Semiconductor
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ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics Characteristics noted under conditions -40°C ≤ TA ≤ 125°C, 5.5 V ≤ VIGNP ≤ 24 V unless otherwise noted. Typical values reflect approximate parameter mean at TA = 25°C under normal conditions unless otherwise noted.
Characteristic POWER INPUT VIGN Current @ 5.5 V – 24 V, VDD = 5.5 V VIGNP Current @ 5.5 V – 24 V, VDD = 5.5 V VIGNP Overvoltage Shutdown VIGNP Voltage VDD Current @ 5.5 VDC, 5.5 V ≤ VIGNP ≤ 24 V VDD Low-Voltage Reset Level VDD One-Time Fuse (Logic Supply) INPUT / OUTPUT Input Current at VDD = 5.5 V LSEn, HSEn, PWM, and MODEn = 3.0 V Input Threshold at VDD = 5.5 V LSEn, HSEn, PWM, and MODEn (4) VSCRn Source Sense Voltage SRC1, SRC2, SRC3 Comparator Input Offset Voltage Comparator Input Bias Current Comparator Input Offset Current Common Mode Voltage
(5) (5)
Symbol
Min
Typ
Max
Unit
IIGN IIGNP VIGNP
SD
– – 25 5.5 – 2.5 7.0
0.2 – 33 – 1.8 3.2 –
1.0 100 36.5 24 4.0 4.0 –
mA mA V V mA V V
VIGNP I
VDD
VDD(RESET) –
IIN 5.0 VTH 1.0 VSCRn -0.3 VINP(OFFSET) VINP(BIAS) IINP(OFFSET) VCMR VINPdiff VCRES - VIGNP 4.0 4.0 4.5 8.0 4.5 VGDHn(on) - V SRCn 4.0 4.0 4.5 VGDHn(off) -1.0 0.6 1.0 5.2 9.0 11 18 18 18 6.0 7.5 10 16 12 18 18 18 18 18 5.0 -500 -300 0 -VDD VIGNP 14 -170 -3.0 – – 24 20 500 300 VDD - 2.0 +VDD 2.0 3.0 12 25
µA
V
V
mV nA nA VDC V V
Comparator Differential Input Voltage Charge Pump Voltage VIGN
(6)
VIGNP = 5.5 V, ICRES = 1.0 mA VIGNP = 9.0 V, ICRES = 1.0 mA VIGNP = 12 V, ICRES = 5.0 mA VIGNP = 24 V, ICRES = 1.0 mA VIGNP = 24 V, ICRES = 5.0 mA VGDH Output Voltage with GDHn in ON State VIGNP = 5.5 V, IGDHn = 1.0 mA VIGNP = 12 V, IGDHn = 5.0 mA VIGNP = 24 V, IGDHn = 5.0 mA VGDH Output Voltage with GDHn in OFF State VIGNP = SRCn = 14 V, IGDHn = 1.0 mA
V
V
Notes 4. Logic inputs LSEn, HSEn, PWM, and MODEn have internal 20 µA internal sinks. 5. Guaranteed by design and characteriza |