Automotive High-Side TMOS Driver

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MC33198 Rev. 2.0, 11/2006 Automotive High-Side TMOS Driver The MC33198 is a high-side TMOS driver, dedicated to automotive applications. It is used in conjunction with an external power MOSFET for high-side drive applications. The device can drive and protect a large variety of MOSFETs. The device has a CMOS compatible input control, charge pump to drive the MOSFET gate, and fault detection circuitry based on programmable VDS monitoring to detect shorted loads. It also includes a programmable timer function to eliminate undesired switch off due to in rush currents, and a status pin which reports the output status of both on and off MOSFET states. The device uses few external components and offers an economical solution to large current high side switches. It also has PWM capability up to 1kHz. 33198 HIGH-SIDE TMOS DRIVER Features • Designed for Automotive High Side Driver Application • Works with a Wide Variety of N-Channel Power MOSFETs ORDERING INFORMATION • PWM Capability • On Board Charge Pump Capable of Charging 25nF in less than 1ms Temperature Device Package with No External Components Required Range (TA) • Drive Inductive Load with No External Clamp Circuitry Required MC33198D • CMOS Logic Compatible Input Control -40°C to 125°C 8 SOICN MCZ33198EF/R2 • TMOS Over Current and Short Circuit Protection • Fault Output to Report an MOSFET Overcurrent Condition • Output Status Available when MOSFET is On or Off • Extended Temperature Range from -40°C to 125°C • Protected Against Automotive Transients with few External Components • Overvoltage and Undervoltage Shutdown • Pb-Free Packaging Designated by Suffix Code EF D SUFFIX EF SUFFIX (PB-FREE) 98ASB42564B 8-PIN SOICN VBAT 33198 VCC DRN INPUT MCU 5.0V STATUS GATE SRC LOAD TIMER GND Figure 1. 33198 Simplified Application Diagram Freescale Semiconductor, Inc. reserves the right to change the detail specifications, as may be required, to permit improvements in the design of its products. © Freescale Semiconductor, Inc., 2007. All rights reserved. INTERNAL BLOCK DIAGRAM INTERNAL BLOCK DIAGRAM VBAT 5 VCC DRN Rdrn 2 Over Volt Detect Bias Supply Ref Charge Pump 80 µA GATE 100 µA 10µA Power ON + 5V C1 LOGIC C2 Vcc + 15V Rsrc POWER TMOS Under Volt Detect INPUT 4 7 SRC MCU 1 Rpu 6 STATUS + C3 - 10µA LOAD 3 GND C timer 8 TIMER Figure 2. 33198 Simplified Internal Block Diagram and Typical Application 33198 2 Analog Integrated Circuit Device Data Freescale Semiconductor PIN CONNECTIONS PIN CONNECTIONS SRC 1 8 TIMER DRN 2 7 INPUT GND 3 6 STATUS GATE 4 5 VCC Figure 3. 33198 Pin Connections Table 1. 33198 Pin Definitions Pin Number 1 2 3 4 5 6 7 8 Pin Name SRC DRN GND GATE VCC STATUS INPUT TIMER Formal Name Source Drain Ground Gate VCC Status Input Timer Definition Input to detect MOSFET/load status Input to set overvoltage threshold Ground for the device Output to control the gate of external MOSFET Power for the device Output signal for MOSFET status Control input Inrush Current detection delay timer input 33198 Analog Integrated Circuit Device Data Freescale Semiconductor 3 ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS Table 2. Maximum Ratings All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or permanent damage to the device. Ratings ELECTRICAL RATINGS Power Supply Voltage TMOS Source Voltage Comparator Threshold Gate Output Voltage Input Voltage Status ESD Voltage Capability THERMAL RATINGS Storage Temperature Operating Junction Temperature THERMAL RESISTANCE Thermal Resistance J/A Peak Package Reflow Temperature During Reflow (2), (3) (1) Symbol Value Unit VCC VSRC VDRN VGATE VIN VST VESD - 0,6 to 60 - 0,6 to 60 - 0,6 to 60 - 0,6 to 25 - 0,6 to 25 - 0,6 to 10 +/-2000 V V V V V V V TSTG TJ -55 to +150 -40 to +150 °C °C RJ TPPRT 145 Note 3 °C °C Notes 1. ESD testing is performed in accordance with the Human Body Model (HBM) (CZAP = 100 pF, RZAP = 1500 Ω), the Machine Model (MM) (CZAP = 200 pF, RZAP = 0 Ω), and the Charge Device Model (CDM), Robotic (CZAP = 4.0pF). 2. 3. Pin soldering temperature limit is for 10 seconds maximum duration. Not designed for immersion soldering. Exceeding these limits may cause malfunction or permanent damage to the device. Freescale’s Package Reflow capability meets Pb-free requirements for JEDEC standard J-STD-020C. For Peak Package Reflow Temperature and Moisture Sensitivity Levels (MSL), Go to www.freescale.com, search by part number [e.g. remove prefixes/suffixes and enter the core ID to view all orderable parts. (i.e. MC33xxxD enter 33xxx), and review parametrics. 33198 4 Analog Integrated Circuit Device Data Freescale Semiconductor ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS Table 3. Static Electrical Characteristics Characteristics noted under conditions 7.0 V ≤ VSUP ≤ 20 V, - 40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted. Characteristic SRC PIN 1 Leakage Current DRN PIN 2 Threshold Current DRN Leakage, Input Off, VCC Pin Open GATE PIN 4 Output On Voltage at 1ms (Charge Pump ON) Turn Off Current with NO Over VDS condition and VOUT >0.5V with Over VDS condition and VOUT >0.5V Output Off Voltage. (Charge Pump OFF and VCC Pin Open) Gate Discharge Current. (VCC Pin Open) Turn On Time Cl = 25nF ; 7.0V < VCC < 10V ; VOUT > VCC+7.0 Cl = 25nF ; 10V < VCC < 20V ; VOUT > VCC+10 VCC PIN 5 Supply Voltage Range Quiescent Supply Current ; In = 0V at VCC = 7.0V at VCC = 20V Supply Current ; In = 5.0V Over Voltage Threshold Under Voltage Threshold STATUS PIN 6 Output Voltage @ I = 1mA INPUT Pin 7 Input Low Voltage Input High Voltage Input Hysteresis Input Pull Down Resistor. VIN >11V Open Input Voltage VIL VIH VHYS RIN VIOP 3.5 0.8 20 36 1.5 100 1.0 V V V kΩ V VOL 0.1 0.4 1.5 V ICC VOV VUR VCC ICCQ 1.0 22 1.8 2.8 28 6.0 4.0 6.0 35 34 7.0 mA V V 7.0 20 V mA IOFF TON IOUTN IOUTW VOFF 0.0 5.0 0.9 1.0 1.0 µA ms 70 5.0 110 10 150 15 µA µA V VON Vcc + 7.0 Vcc+15 V ITHR ILEAK 54 81 102 10 µA µA ILSRC -10 10 µA Symbol Min Typ Max Unit 33198 Analog Integrated Circuit Device Data Freescale Semiconductor 5 ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS Table 3. Static Electrical Characteristics (continued) Characteristics noted under conditions 7.0 V ≤ VSUP ≤ 20 V, - 40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted. Characteristic TIMER PIN 8 Timer Current On Threshold Discharge Current @ VPIN8 = 5.0V Saturation Voltage @ IPIN8 = 1mA ITIME VHTH IDISCH VSAT 7.0 5.2 2.0 10 5.5 5.0 0.15 14 5.8 10 0.4 µA V mA V Symbol Min Typ Max Unit 33198 6 Analog Integrated Circuit Device Data Freescale Semiconductor ELECTRICAL CHARACTERISTICS DYNAMIC ELECTRICAL CHARACTERISTICS DYNAMIC ELECTRICAL CHARACTERISTICS Table 4. Dynamic Electrical Characteristics Characteristics noted under conditions 7.0 V ≤ VSUP ≤ 18 V, - 40°C ≤ TA ≤ 125°C, GND = 0 V unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted. Parameter Vcc = 7.0V Vcc = 14V Vcc = 21V Unit TYPICAL RISE TIME (TR) VERSUS GATE EXTERNAL CAPACITOR LOAD AND SUPPLY VOLTAGE (REFER TO Figure 4) C = 1.0nF C = 3.0nF C = 10nF C = 30nF 15 60 140 730 7.0 25 80 270 10 40 90 340 µs µs µs µs TYPICAL FALL TIME (TF) VERSUS GATE EXTERNAL CAPACITOR LOAD AND SUPPLY VOLTAGE (REFER TO Figure 4) C = 1.0nF C = 3.0nF C = 10nF C = 30nF 150 430 1200 4800 230 800 2300 8000 280 950 2750 9200 µs µs µs µs TIMING DIAGRAMS INPUT Pin 7 Vcc 5V 5 VCC 1 SRC 2 DRN GATE 4 Typically (V CC 0V 6 STATUS GATE Pin 4 + 15V) 7 INPUT TIMER GND C 8 3 90% 10% t R t F Figure 4. Timing Measurements Test Schematic 33198 Analog Integrated Circuit Device Data Freescale Semiconductor 7 ELECTRICAL CHARACTERISTICS TIMING DIAGRAMS UNDER VOLTAGE THRESHOLD < 30V and > 20V Vbat VCC PIN 5 (V) UNDER VOLTAGE THRESHOLD 0V 5V IN PIN 7 (V) 0V 110µA GATE DISCHARGE CURRENT 10µA GATE DISCHARGE CURRENT 10µA DISCHARGE Vbat + 14V MOSFET GATE (V) 0V < Vbat PIN 2 VOLTAGE LOAD VOLTAGE (V) MOSFET SOURCE (V) 0V 10V 5,5V TIMER PIN 8 (V) 0V FAULT PIN 6 (V) 5V 0V NORMAL SWITCH ON/OFF TEMPORY OVERLOAD PERMANENT OVERLOAD MOSFET OFF LOAD SHORTED TO VBAT OVERVOLTAGE CONDITION UNDERVOLTAGE CONDITION Figure 5. Descriptive Waveform Diagram 33198 8 Analog Integrated Circuit Device Data Freescale Semiconductor ELECTRICAL CHARACTERISTICS ELECTRICAL PERFORMANCE CURVES ELECTRICAL PERFORMANCE CURVES g SUPPLY CURRENT (mA) Ta = -40 °C 4 3 2 Ta = 25 °C 1 0 5 Ta = 125 °C DRAIN CURRENT (uA) 5 80 Ta = 25 °C Ta = - 40 °C 78 76 74 Ta = 125 °C 72 10 15 20 25 5 10 15 20 25 Vcc, SUPPLY VOLTAGE (V) Vcc, SUPPLY VOLTAGE (V) Figure 6. Supply Current versus Supply Voltage. Pin 7 = 0V FAULT OUTPUT VOLTAGE (V) Figure 9. Drain Current versus Supply Voltage 2 Ta = 125 °C 1.5 SUPPLY CURRENT (mA) 25 20 15 10 5 0 5 10 15 20 Vcc, SUPPLY VOLTAGE (V) 25 1 Ta = 25 °C Ta = -40 °C 0.5 0 1 2 3 4 FAULT OUTPUT CURRENT (mA) 5 Figure 10. Fault Output Voltage versus Current 40 25°C Vg, GATE VOLTAGE (V) 35 Figure 7. Supply Current versus Supply Voltage. Pin 7 = 5.0V 11 TIMER CURRENT (uA) Ta = -40 °C 125°C -40°C 10 30 25 20 15 5 Ta = 25 °C 9 Ta = 125 °C 8 5 10 15 20 25 20 10 15 Vcc, SUPPLY VOLTAGE (V) 25 Vcc, SUPPLY VOLTAGE (V) Figure 11. Gate Voltage versus Voltage Figure 8. Time Current versus Supply Voltage 33198 Analog Integrated Circuit Device Data Freescale Semiconductor 9 ELECTRICAL