Rail-to-Rail Op Amp

www.DataSheet4U.com MCP6241/2/4 50 µA, 550 kHz Rail-to-Rail Op Amp Features • • • • • • Gain Bandwidth Product: 550 kHz (typ.) Supply Current: IQ = 50 µA (typ.) Supply Voltage: 1.8V to 5.5V Rail-to-Rail Input/Output Extended Temperature Range: -40°C to +125°C Available in 5-pin SC-70 and SOT-23 packages Description The Microchip Technology Inc. MCP6241/2/4 operational amplifiers (op amps) provide wide bandwidth for the quiescent current. The MCP6241/2/4 has a 550 kHz Gain Bandwidth Product (GBWP) and 68° (typ.) phase margin. This family operates from a single supply voltage as low as 1.8V, while drawing 50 µA (typ.) quiescent current. In addition, the MCP6241/2/4 family supports rail-to-rail input and output swing, with a common mode input voltage range of VDD + 300 mV to VSS – 300 mV. These op amps are designed in one of Microchip’s advanced CMOS processes. Applications • • • • • • Automotive Portable Equipment Photodiode (Transimpedance) Amplifier Analog Filters Notebooks and PDAs Battery-Powered Systems Package Types MCP6241 SOT-23-5 VOUT 1 VSS 2 VIN+ 3 – + MCP6241 PDIP, SOIC, MSOP 5 VDD NC 1 VIN– 2 4 VIN– VIN+ 3 VSS 4 – + 8 NC 7 VDD 6 VOUT 5 NC Available Tools • SPICE Macro Models (at www.microchip.com) • FilterLab® Software (at www.microchip.com) MCP6241R MCP6242 PDIP, SOIC, MSOP VOUTA 1 VINA 2 _ Typical Application RG2 VIN2 RG1 VIN1 VDD RX RY RZ – MCP6241 + VOUT RF VOUT 1 VDD 2 VIN+ 3 SOT-23-5 5 VSS – + + – 8 VDD -+ +7 VOUTB 6 VINB_ 5 VINB+ 4 VIN– VINA+ 3 VSS 4 MCP6241U SC-70-5, SOT-23-5 VIN+ 1 VSS 2 VIN– 3 5 VDD MCP6244 PDIP, SOIC, TSSOP VOUTA 1 VINA– 2 14 VOUTD - + + - 13 VIND– 12 VIND+ 11 VSS 10 VINC+ - + +- 9 V – INC 8 VOUTC 4 VOUT VINA+ 3 VDD 4 Summing Amplifier Circuit VINB+ 5 VINB– 6 VOUTB 7 © 2005 Microchip Technology Inc. DS21882C-page 1 MCP6241/2/4 1.0 ELECTRICAL CHARACTERISTICS † Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings † VDD – VSS ........................................................................7.0V All Inputs and Outputs ................... VSS – 0.3V to VDD + 0.3V Difference Input Voltage ...................................... |VDD – VSS| Output Short Circuit Current ..................................continuous Current at Input Pins ....................................................±2 mA Current at Output and Supply Pins ............................±30 mA Storage Temperature.....................................-65°C to +150°C Maximum Junction Temperature (TJ) .......................... +150°C ESD Protection On All Pins (HBM;MM) ............... ≥ 4 kV; 300V DC ELECTRICAL CHARACTERISTICS Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/2, RL = 100 kΩ to VDD/2 and VOUT ≈ VDD/2. Parameters Input Offset Input Offset Voltage Extended Temperature Input Offset Drift with Temperature Power Supply Rejection Input Bias Current and Impedance Input Bias Current: At Temperature At Temperature Input Offset Current Common Mode Input Impedance Differential Input Impedance Common Mode Common Mode Input Range Common Mode Rejection Ratio Open-Loop Gain DC Open-Loop Gain (large signal) Output Maximum Output Voltage Swing Output Short-Circuit Current Power Supply Supply Voltage Quiescent Current per Amplifier Note: VDD IQ 1.8 30 — 50 5.5 70 V µA IO = 0, VCM = VDD – 0.5V VOL, VOH VSS + 35 ISC ISC — — — ±6 ±23 VDD – 35 — — mV mA mA RL = 10 kΩ, 0.5V Output Overdrive VDD = 1.8V VDD = 5.5V AOL 90 110 — dB VOUT = 0.3V to VDD – 0.3V, VCM = VSS VCMR CMRR VSS – 0.3 60 — 75 VDD + 0.3 — V dB VCM = -0.3V to 5.3V, VDD = 5V IB IB IB IOS ZCM ZDIFF — — — — — — ±1.0 20 1100 ±1.0 1013||6 1013||3 — — — — — — pA pA pA pA Ω||pF Ω||pF TA = +85°C TA = +125°C VOS VOS ΔVOS/ΔTA PSRR -5.0 -7.0 — — — — ±3.0 83 +5.0 +7.0 — — mV mV VCM = VSS TA= -40°C to +125°C, VCM = VSS (Note) Sym Min Typ Max Units Conditions µV/°C TA= -40°C to +125°C, VCM = VSS dB VCM = VSS The SC-70 package is only tested at +25°C. DS21882C-page 2 © 2005 Microchip Technology Inc. MCP6241/2/4 AC ELECTRICAL CHARACTERISTICS Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.8 to 5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2, RL = 10 kΩ to VDD/2 and CL = 60 pF. Parameters AC Response Gain Bandwidth Product Phase Margin Slew Rate Noise Input Noise Voltage Input Noise Voltage Density Input Noise Current Density Eni eni ini — — — 10 45 0.6 — — — µVP-P nV/√Hz fA/√Hz f = 0.1 Hz to 10 Hz f = 1 kHz f = 1 kHz GBWP PM SR — — — 550 68 0.30 — — — kHz ° V/µs G = +1 Sym Min Typ Max Units Conditions TEMPERATURE CHARACTERISTICS Electrical Characteristics: Unless otherwise indicated, VDD = +1.8V to +5.5V and VSS = GND. Parameters Temperature Ranges Extended Temperature Range Operating Temperature Range Storage Temperature Range Thermal Package Resistances Thermal Resistance, 5L-SC70 Thermal Resistance, 5L-SOT-23 Thermal Resistance, 8L-MSOP Thermal Resistance, 8L-PDIP Thermal Resistance, 8L-SOIC Thermal Resistance, 14L-PDIP Thermal Resistance, 14L-SOIC Thermal Resistance, 14L-TSSOP Note: θJA θJA θJA θJA θJA θJA θJA θJA — — — — — — — — 331 256 206 85 163 70 120 100 — — — — — — — — °C/W °C/W °C/W °C/W °C/W °C/W °C/W °C/W TA TA TA -40 -40 -65 — — — +125 +125 +150 °C °C °C (Note) Sym Min Typ Max Units Conditions The internal Junction Temperature (TJ) must not exceed the Absolute Maximum specification of +150°C. © 2005 Microchip Technology Inc. DS21882C-page 3 MCP6241/2/4 2.0 Note: TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2, RL = 100 kΩ to VDD/2 and CL = 60 pF. 20% 18% 16% 14% 12% 10% 8% 6% 4% 2% 0% 90 CMRR, PSRR (dB) Percentage of Occurrences 630 Samples VCM = VSS 85 PSRR (VCM = VSS) 80 75 CMRR (VCM = -0.3V to +5.3V, VDD = 5.0V) -50 -25 0 25 50 75 Ambient Temperature (°C) 100 125 70 -5 -4 -3 -2 -1 0 1 2 3 4 Input Offset Voltage (mV) 5 FIGURE 2-1: Input Offset Voltage. FIGURE 2-4: Temperature. 120 Open-Loop Gain (dB) CMRR, PSRR vs. Ambient 110 100 PSRR, CMRR (dB) 90 80 70 60 50 40 30 20 10 1.E+01 100 1.E+02 1k 10k 1.E+03 1.E+04 Frequency (Hz) 100k 1.E+05 PSRR+ PSRRCMRR 0 Gain Open-Loop Phase (°) RL = 10.0 k VCM = VDD/2 -30 -60 Phase -90 -120 -150 -180 -210 100 1k 10k 1.E+ 1M 1.E+ 1.E+ 1.E+ 1.E+ 100k 1.E+ 10M Frequency (Hz) 05 06 07 02 03 04 100 80 60 40 20 0 -20 0.1 1 10 1.E- 1.E+ 1.E+ 01 00 01 FIGURE 2-2: Frequency. 25% Percentage of Occurrences 20% 15% 10% 5% 0% 0 6 PSRR, CMRR vs. FIGURE 2-5: Frequency. 30% 25% 20% 15% 10% 5% 0% 0.0 0.2 0.4 180 Samples VCM = VDD/2 TA = +125°C Open-Loop Gain, Phase vs. Percentage of Occurrences 180 Samples VCM = VDD/2 TA = +85°C 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Input Bias Current (pA) Input Bias Current (nA) FIGURE 2-3: Input Bias Current at +85°C. FIGURE 2-6: Input Bias Current at +125°C. DS21882C-page 4 © 2005 Microchip Technology Inc. 2.0 12 18 24 30 36 42 MCP6241/2/4 Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2, RL = 100 kΩ to VDD/2 and CL = 60 pF. 10,000 Input Noise Voltage Density (nV/ Hz) 1,000 100 10 0.1 1 10 100 1k 10k 100k 1.E-01 1.E+0 1.E+0 1.E+0 1.E+0 1.E+0 1.E+0 Frequency (Hz) 0 1 2 3 4 5 20% 18% 16% 14% 12% 10% 8% 6% 4% 2% 0% Percentage of Occurrences 628 Samples VCM = VSS TA = -40°C to +125°C -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 Input Offset Voltage Drift (µV/°C) FIGURE 2-7: vs. Frequency. 300 Input Offset Voltage (µV) Input Noise Voltage Density FIGURE 2-10: Input Offset Voltage Drift. 700 Input Offset Voltage (µV) VDD = 1.8V 200 100 0 -100 -200 -300 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 TA = -40°C TA = +25°C TA = +85°C TA = +125°C 650 600 550 500 450 400 350 300 VDD = 1.8V VCM = VSS VDD = 5.5V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Output Voltage (V) Common Mode Input Voltage (V) FIGURE 2-8: Input Offset Voltage vs. Common Mode Input Voltage at VDD = 1.8V. 400 Input Offset Voltage (µV) VDD = 5.5V 300 200 100 0 -100 -200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 -0.5 6.0 Common Mode Input Voltage (V) TA = -40°C TA = +25°C TA = +85°C TA = +125°C FIGURE 2-11: Output Voltage. 35 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 Input Offset Voltage vs. Short Circuit Current (mA) +ISC TA = +125°C TA = +85°C TA = +25°C TA = -40°C -ISC 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Power Supply Voltage (V) FIGURE 2-9: Input Offset Voltage vs. Common Mode Input Voltage at VDD = 5.5V. FIGURE 2-12: Output Short-Circuit Current vs. Ambient Temperature. © 2005 Microchip Technology Inc. DS21882C-page 5 12 MCP6241/2/4 Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2, RL = 100 kΩ to VDD/2 and CL = 60 pF. 0.50 0.45 Slew Rate (V/µs) 0.40 0.35 0.30 0.25 0.20 0.15 0.10 -50 -25 0 25 50 75 100 Ambient Temperature (°C) 125 Time (1 µs/div) VDD = 1.8V