Standard Gate SCR

www.DataSheet4U.com MCK100-6 Sensitive Gate Silicon Controlled Rectifiers Features 3.Gate Symbol 2. Anode BVDRM = 600V IT(RMS) = 0.8 A ITSM = 10 A Repetitive Peak Off-State Voltage : 400V R.M.S On-State Current ( IT(RMS)= 0.8 A ) Low On-State Voltage (1.2V(Typ.)@ ITM) Available with tape & reel 1.Cathode SOT- 89 General Description 1 Sensitive-gate triggering thyristor is suitable for the application where gate current limited such as small motor control, gate driver for large thyristor, sensing and detecting circuits. 2 3 Absolute Maximum Ratings Symbol VDRM IT(AV) IT(RMS) ITSM I2 t PGM PG(AV) IFGM VRGM TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition sine wave,50 to 60Hz,gate open half sine wave : TC = 112 °C 180° Conduction Angle 1/2 Cycle, 60Hz, sine wave non-repetitive , t = 8.3ms t = 8.3ms TA = 25 °C, pulse width TA = 25 °C, t = 8.3ms TA = 25 °C, pulse width TA = 25 °C, pulse width 1.0 1.0 1.0 Parameter Repetitive Peak Off-State Voltage Average On-State Current R.M.S On-State Current Surge On-State Current I2t for Fusing Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Reverse Peak Gate Voltage Operating Junction Temperature Storage Temperature Ratings 400 0.5 0.8 10 0.415 2 0.1 1 5.0 - 40 ~ 125 - 40 ~ 150 Units V A A A A2 s W W A V °C °C April, 2005. Rev.0 copyright @ D&I Semiconductor Co., Ltd., All rights reserved. 1/5 www.DataSheet4U.com MCK100-6 Electrical Characteristics Symbol Items ( TC = 25 °C unless otherwise noted ) Conditions VAK = VDRM or VRRM ; RGK = 1000 TC = 25 °C TC = 125 °C ( ITM = 1 A, Peak ) VAK = 6 V, RL=100 Ratings Min. Typ. Max. Unit IDRM Repetitive Peak Off-State Current Peak On-State Voltage (1) 10 200 1.2 1.7 V VTM IGT Gate Trigger Current (2) TC = 25 °C TC = - 40 °C VD = 7 V, RL=100 200 500 VGT Gate Trigger Voltage (2) TC = 25 °C TC = - 40 °C VAK = 12 V, RL=100 VD = Rated VDRM , form , RGK = 1000 TJ = 125 °C IPK = 20A ; PW = 10 Igt = 20mA VAK = 12 V, Gate Open Initiating Curent = 20mA TC = 25 °C TC = - 40 °C Junction to case Junction to Ambient TC = 125 °C Exponential wave500 800 0.2 0.8 1.2 V VGD Non-Trigger Gate Voltage (1) Critical Rate of Rise Off-State Voltage Critical Rate of Rise On-State Current V dv/dt V/ di/dt ; diG/dt = 1A/ 50 A/ IH Holding Current 2 5.0 10 15 125 mA Rth(j-c) Rth(j-a) Thermal Impedance Thermal Impedance °C/W °C/W Notes : 1. Pulse Width 1.0 ms , Duty cycle 1% 2. Does not include RGK in measurement. 2/5 www.DataSheet4U.com MCK100-6 Fig 1. Gate Characteristics Fig 2. Maximum Case Temperature 160 1 Max. Allowable Case Temperature [ C] o 10 140 VGM(5V) PGM(2W) θ = 180 120 100 80 o Gate Voltage [V] PG(AV)(0.1W) 10 0 IGM(1A) 2 60 40 20 0 0.0 25 C o 360° : Conduc t ion Angl e VGD(0.2V) 10 -1 10 0 10 1 10 2 10 3 10 4 0.1 0.2 0.3 0.4 0.5 0.6 Gate Current [mA] Average On-State Current [A] Fig 3. Typical Forward Voltage 10 1 Fig 4. Thermal Response 10 2 Transient Thermal Impedance [ C/W] On-State Current [A] o Rθ (J-C) 125 C 10 0 o 10 1 25 C o 10 -1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 -2 10 0 10 -1 10 0 10 1 10 2 10 3 On-State Voltage [V] Time (sec) Fig 5. Typical Gate Trigger Voltage vs. Junction Temperature 10 Fig 6. Typical Gate Trigger Current vs. Junction Temperature 10 VGT(25oC) VGT(toC) IGT(25 C) IGT(t C) o 1 1 o 0.1 -50 0 50 100 o 150 0.1 -50 0 50 100 o 150 Junction Temperature[ C] Junction Temperature[ C] 3/5 www.DataSheet4U.com MCK100-6 Fig 7. Typical Holding Current 10 0.8 θ = 180 Fig 8. Power Dissipation o Max. Average Power Dissipation [W] 0.7 0.6 θ = 30 0.5 0.4 0.3 0.2 0.1 0.0 0.0 o θ = 120 θ = 90 θ = 60 o o o IH(25 C) IH(t C) o o 1 0.1 -50 0 50 100 o 150 0.1 0.2 0.3 0.4 0.5 0.6 Junction Temperature[ C] Average On-State Current [A] 4/5 www.DataSheet4U.com MCK100-6 SOT- 89 Package Dimension mm Typ. Inch Typ. Dim. A B B1 C C1 D D1 E e e1 H L R Min. 1.40 0.36 0.32 0.35 0.35 4.40 1.40 2.30 2.90 3.94 0.90 Max. 1.60 0.56 0.52 0.44 0.44 4.60 1.80 2.60 3.10 4.25 1.10 Min. 0.055 0.014 0.013 0.014 0.014 0.173 0.055 0.091 0.114 0.155 0.035 Max. 0.063 0.022 0.020 0.017 0.017 0.181 0.071 0.102 0.122 0.167 0.043 1.50 0.060 0.25 0.010 1 2 3 1. Cathode 2. Anode 3. Gate 5/5