Dual High Side Switch

MOTOROLA Freescale Semiconductor, Inc. www.DataSheet4U.com Semiconductor Technical Data Order Number: MC33486/D Rev. 3.3, 06/2001 Advance Information Dual High Side Switch for H-Bridge Automotive Applications This device is a dual high side switch for automotive applications which incorporates a dual low side switch control feature. This device is designed to monitor two low side switches for typical DC-motor control in an H-Bridge configuration. It can be directly interfaced with a microcontroller for control and diagnostic functions, is PWM capable and has a self-adjusted switching speed for minimizing electromagnetic emission. The High Side block incorporates two 15mΩ Rdson N-Channel power Mosfets with senses and a control circuitry. Each output of this high side block is protected against short to gnd and load shorts, and has over temperature detection with hysteresis. It includes a current recopy feature for monitoring the load current. The control circuitry also has an overvoltage detector which turns off the bridge and protects the load in case of Vbat exceeding 28V. The low side control block is able to drive 2 low sides switches in a H-bridge configuration and protects them in case of short circuit. This, in combination with the High side protection, fully protects the H-bridge from shorted loads, shorts to Vbat and shorts to GND. This device offers a very low quiescent current in standby mode. •10 Amps Nominal DC Current •35 Amps Maximum Peak Current •DC Voltage from -0.3V to 40V •Operating Voltage from 8 to 28V •Overvoltage Detection : Switch Off when Vbat Exceed 28V •High Side and Low Side Overcurrent protection •Operating Junction Temperature - 40°C to 150°C •Rdson 15mΩ max at 25C° per Mosfet •DC to 30kHz PWM Capability •Standby Mode with Low Standby Current •Junction to Case Thermal Resistance : 2°C/W •ESD protection 2kV •Current Recopy to Monitor the High-Side Current •Common diagnostic output MC33486 DUAL HIGH SIDE SWITCH FOR H-BRIDGE AUTOMOTIVE APPLICATIONS SEMICONDUCTOR TECHNICAL DATA DH SUFFIX HSOP20 Package CASE 979-04 Freescale Semiconductor, Inc... D2PAK D2PAK PIN ASSIGNMENT Vbat 21 Gnd 1 Cur R 2 20 Wake 19 St 18 IN2 17 GLS2 16 OUT2 15 OUT2 14 OUT2 13 OUT2 12 NC 21 Vbat 11 NC IN1 3 GLS1 4 OUT1 5 OUT1 6 OUT1 7 OUT1 8 NC 9 NC 10 Simplified Block Diagram and Typical Application 5V 5V High Side Block VBAT MCU I/O St IN1 IN2 WAKE Cur R GND Control GLS1 OUT1 GLS2 OUT2 M GND Low Side Block This document contains information on a new product. Specifications and information herein are subject to change without notice. © Motorola, Inc., 2001. All rights reserved. GND For More Information On This Product, Go to: www.freescale.com TM MC33486 Freescale Semiconductor, Inc. PINS FUNCTION DESCRIPTION Pin No. Name/Function Description TAB Vbat Supply Voltage The backside TAB is connected to the power supply of the MC33486DH. In addition to its supply function, the tab contributes to the thermal behaviour of the device by conducting the heat from the switching MOSFET to the printed circuit board. Pins 5, 6,7,8 are the source of the output1 15mOhm High-side MOSFET1. Pins 13,14,15 are source of the output 2 15mOhm High-side MOSFET2. They are respectively controlled via the IN1 and IN2 pins. These outputs are current limited and thermally protected These are the device input pins which directly control their associated outputs. The levels are CMOS compatible. When the input is a logic low, the associated output is low (High Side OFF and Low Side ON). Each input pin has an internal active pull down, so that it will not float if disconnected. The Status output is an open drain indication that goes active low when a fault mode (Short to gnd/Vbat, Overtemp) is detected by the device on either one channel or both simultaneously. Its internal structure is an open drain architecture with an internal clamp at 6V. An external pull up resistor connected to Vdd (5V) is needed. See Functional Truth Table. These pins have to be connected to the gate of each Low Side. When the input (INx) is logic High, the associated GLS is grounded to turn off the external FET . This pin is a digital input . When Wake is a logic low, the device’s bias current draw is at a minimum. If Wake is a logic high, the part is operationnal. Wake pin has a pull down resistor. The Current Sense pin deliver a ratioed amount (1/3700) of the sum of the High Side currents that can be used to generate signal ground referenced output voltages for use by the microcontroller. These pins are not used. This is the Ground pin of the device. 5,6,7,8 13,14,15,16 3 18 OUT1 OUTPUT Channel 1 OUT 2 OUTPUT Channel 2 IN 1 INPUT Channel 1 IN 2 INPUT Channel 2 St Status for both Channels Freescale Semiconductor, Inc... 19 4 17 20 GLS1 GLS2 Wake 2 Cur R Load Current Sense NC Not Connected GND GROUND 9, 10, 11, 12, 1 For More Information On This Product, Go to: www.freescale.com Dual High Side Switch for H-Bridge Automotive Applications 2 MAXIMUM RATINGS Parameter MC33486 Freescale Semiconductor, Inc. Symbol Vbat Vout Vin Iin Value - 0.3 to + 40 - 0.3 to + 40 -0.3 to + 7 +/- 5 Unit V V V mA Power Supply Voltage : Continuous/ Pulse Out1, Out2 to Vbat voltage : Continuous/ Pulse IN1, IN2, Wake, ST Input DC voltage : Continuous/ Pulse IN1, IN2, Wake Input Current ESD all Pins Human Body Model (note1) Machine Model (note2) Output DC Output Current, 1 Channel ON, Ta=85°C (note4) Output Current : Pulse (Note 3) THERMAL RATINGS Junction Temperature Storage Temperature Range Thermal resistance junction to case Thermal resistance junction to ambient (Note 4) Power dissipation at Tcase 140°C (Note 5) Vesd1 Vesd2 Ioudc +/-2000 +/-200 10 V V A Ioutp 35 A Freescale Semiconductor, Inc... Tj Tst Rthjc Rthja Pd - 40 to +150 - 65 to +150 2 25 5 °C °C °C/W °C/W W NOTES : 1. ESD1 testing is performed in accordance with the Human Body Model (Czap = 100pF, Rzap = 1500Ω) 2. ESD2 testing is performed in accordance with the Machine Model (Czap = 100pF, Rzap = 0Ω) 3. During load in rush current. 4. Device mounted on dual side printed circuit board with 70µm copper thickness and 10cm2 copper heat sink (2.5 cm2 on top side and 7.5 cm2 on down side). 5. Assuming a 150°C maximum junction temperature. ELECTRICAL CHARACTERISTICS High Side Block Tj from - 40°C to +150°C, Vbat from 9V to 16V, unless otherwise noted.Typical values reflect approximate mean at 25°C, nominal Vbat, at time of device characterization. Characteristics Description Symbol Min. SUPPLY CHARACTERISTICS Nominal Operating Voltage Vbat 8 28 V Functional to truth table until overvoltage threshold Vbat < 13.5V, wake=0, IN1=IN2=0 No PWM, IN1or IN2=5V, Wake=5V PWM=20kHz, d=50% Typ. Max. Unit Conditions Standby Current Istdby 10 µA Supply Current in Operation Mode Ion 9 15 mA Supply Current in Operation Mode STATIC OUTPUT CHARACTERISTICS High Side Drain to Source On Resistance High Side Drain to Source On Resistance High Side Body Diode Voltage (Out to Vbat) Low Side Gate output Voltage Itbd 15 mA Rdson Rdson Vbd Vgs 12 21 15 30 0.7 14 mΩ mΩ V V Iout =5A, Tj = 25°C Iout = 5A, Vbat > 9V & Tj = 150°C @ Iout=-5A, Tj = 150°C Internally clamped For More Information On This Product, Go to: www.freescale.com Dual High Side Switch for H-Bridge Automotive Applications 3 MC33486 Freescale Semiconductor, Inc. Characteristics Description Symbol Min. INPUTS CHARACTERISTICS IN1, IN2, Wake Input low levels Input high levels Input Hysteresis Logic Input Current Logic Input Current STATUS CHARACTERISTICS Status Voltage Status Leakage Vst Istlk 0.5 10 V µA Ist=1mA, output in fault Vst=5V Vil Vih Vhyst Unit Typ. Max. Conditions 1.5 3.5 0.2 1 50 0.6 1 V V V µA µA IN1 and IN2 pins only Vin = 1.5V Vin = 3.5V Iin Iin Freescale Semiconductor, Inc... OVERLOAD PROTECTION CHARACTERISTICS High Side Output Current Shutdown High Side Overcurrent Shutdown Delay Low Side Overcurrent detection Vout to gnd Ilim tIlim Voutfault 20 35 3 50 20 3 A µs V From short to output shutdown If the low side is ON (GLS>4.3V). This is a inferred overcurrent condition 1 2 Low Side Overcurrent detection Vout to gnd Shutdown Delay Thermal Shutdown Thermal Shutdown Hysteresis Under Voltage Shutdown Threshold Under Voltage Shutdown hysteresis Over Voltage Shutdown Threshold Over Voltage Shutdown hysteresis CURRENT RECOPY CHARACTERISTICS Current Recopy Ratio tout-fault 3 10 µs °C °C Tshut Thyst Vuv Vuv-hyst Vov Vov-hyst 150 175 10 6 0.15 27 29 0.15 8 V V 31 V V Cr 3700 Iout from 4A to 8A Tj -40°C to 105°C Current Recopy Ratio Accuracy Iout from 4A to 8A Iout from 8A to 20A Current Recopy Clamp Voltage Cr-ac -15 -10 6 TBC 9 15 10 11 TBC % Tj <125°C Garanteed by design Current mirror=10mA No external resistor on Cur R pin. Vclst V SWITCHING CHARACTERISTICS High Speed Mode to Low Speed Mode transition pulse width Gate Low Side Rise Time Gate Low Side Fall Time tsmod 150 250 350 µs µs µs Tpsrls Tnsrls 3.6 4.9 From 10% to 90% Vout, Load=3Ω From 90% to 10% Vout, Load=3Ω HIGH SPEED MODE SWITCHING CHARACTERISTICS (pulse<280µs) For More Information On This Product, Go to: www.freescale.com Dual High Side Switch for H-Bridge Automotive Applications 4 MC33486 Freescale Semiconductor, Inc. Characteristics Description Symbol Min. High Side Positive Slew Rate High Side Negative Slew Rate High Side Turn on Delay Time High Side Turn off Delay Time Thr Thf thdon thdoff Typ. 10 40 2.5 1.5 Max. V/µs V/µs µs µs From 10% to 65% Vout, Load=3Ω From 90% to 35% Vout, Load=3Ω To 10% Vout, Load=3Ω To 90% Vout, Load=3Ω Unit Conditions LOW SPEED MODE SWITCHING CHARACTERISTICS High Side Maximum Output Positive Slew Rate High Side Maximum Output Negative Slew Rate High Side Turn on Delay TIme High Side Turn off Delay Time lr 1.0 V/µs From 10% to 65% Vout, Load=3Ω Tlf 0.5 V/µs From 90% to 35% Vout, Load=3