Class B Serial Transceiver

www.DataSheet4U.com Freescale Semiconductor, Inc. Document order number: MC33390/D Rev 4.0, 2/2003 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 33390 Class B Serial Transceiver The 33390 is a serial transceiver designed to provide bi-directional halfduplex communication meeting the automotive SAE Standard J-1850 Class B Data Communication Network Interface specification. It is designed to interface directly to on-board vehicle microcontrollers and serves to transmit and receive data on a single-wire bus at data rates of 10.4 kbps using Variable Pulse Width Modulation (VPWM). The 33390 operates directly from a vehicle's 12 V battery system and functions in a logic fashion as an I/O interface between the microcontroller's 5.0 V CMOS logic level swings and the required 0 V to 7.0 V waveshaped signal swings of the bus. The bus output driver is short circuit current limited. Features • Designed for SAE J-1850 Class B Data Rates • Full Operational Bus Dynamics Over a Supply Voltage of 9.0 to 16 V • Ambient Operating Temperature of -40°C to 125°C • Interfaces Directly to Standard 5.0 V CMOS Microcontroller • BUS Pin Protected Against Shorts to Battery and Ground • Thermal Shutdown with Hysteresis • Voltage Waveshaping of Bus Output Driver • 40 V Max VBAT Capability J-1850 SERIAL TRANSCEIVER Freescale Semiconductor, Inc... D SUFFIX PLASTIC PACKAGE CASE 751 (8-LEAD SOICN) ORDERING INFORMATION Device MC33390D/DR2 Temperature Range (TA ) -40 to 125°C Package 8 SOICN 33390 Simplified Application Diagram VBAT VBAT BUS 470 pF 10.6 kΩ 33390 47 µH Primary Node SLEEP Tx MCU Rx LOAD Secondary Nodes GND 4X/LOOP © Motorola, Inc. 2003 For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. 33390 Bus Driver VBAT SLEEP BUS Voltage Regulator 4.5 V Reference Tx Waveshaping Filter Digital Output Driver 4X Enable Loopback Thermal Shutdown Freescale Semiconductor, Inc... Rx Loss of Ground Protection LOAD 4X/LOOP GND Note This device contains approximately 400 active transistors and 250 gates. Figure 1. 33390 Simplified Block Diagram 33390 2 MOTOROLA ANALOG For More Information On This Product,INTEGRATED CIRCUIT DEVICE DATA Go to: www.freescale.com Freescale Semiconductor, Inc. SLEEP GND LOAD BUS 1 1 2 2 3 3 4 4 88 77 66 55 Rx Tx 4X/LOOP VBAT PIN FUNCTION DESCRIPTION Pin 1 2 3 Pin Name SLEEP GND LOAD BUS VBAT 4X/LOOP Tx Rx Description Enables the transceiver when Logic 1 and disables the transceiver when Logic 0. Device ground pin. Accommodates an external pull-down resistor to ground to provide loss of ground protection. Waveshaped SAE Standard J-1850 Class B transmitter output and receiver input. Provides device operating input power. Tristate input mode control; Logic 0 = normal waveshaping, Logic 1 = waveshaping disabled for 4X transmitting, high impedance = loopback mode. Serial data input (DI) from the microcontroller to be transmitted onto Bus. Bus received serial data output (DO) sent to the microcontroller. Freescale Semiconductor, Inc... 4 5 6 7 8 MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA For More Information On This Product, Go to: www.freescale.com 33390 3 Freescale Semiconductor, Inc. MAXIMUM RATINGS All voltages are with respect to ground unless otherwise noted. Rating VBAT DC Supply Voltage (Note 1) Input I/O Terminals (Note 2) BUS and LOAD Outputs ESD Voltage Human Body Model (Note 3) Machine Model (Note 4) Storage Temperature VESD1 VESD2 TSTG TA TJ TSOLDER RθJ-A ±2000 ±200 -65 to 150 -40 to 125 -40 to 150 260 180 °C °C °C °C °C/W Symbol VBAT VI/O(CPU) VBUS Value -0.3 to 40 -0.3 to 7.0 -2.0 to 16 Unit V V V V Freescale Semiconductor, Inc... Operating Ambient Temperature Operating Junction Temperature Soldering Temperature (for 10 seconds) Thermal Resistance (Junction-to-Ambient) Notes 1. An external series diode must be used to provide reverse battery protection of the device. 2. SLEEP, TX, RX, and 4X/LOOP are normally connected to a microcontroller. 3. ESD1 testing is performed in accordance with the Human Body Model (CZAP =100 pF, RZAP =1500 Ω). 4. ESD2 testing is performed in accordance with the Machine Model (CZAP =200 pF, RZAP =0 Ω). 33390 4 MOTOROLA ANALOG For More Information On This Product,INTEGRATED CIRCUIT DEVICE DATA Go to: www.freescale.com Freescale Semiconductor, Inc. STATIC ELECTRICAL CHARACTERISTICS Characteristics noted under conditions of 7.0 V ≤ VBAT ≤ 16 V, -40°C ≤ TA ≤ 125°C, SLEEP = 5.0 V unless otherwise noted. Typical values reflect the parameter's approximate midpoint average value with VBAT = 13 V, TA = 25°C. All positive currents are into the pin. All negative currents are out of the pin. Characteristic Symbol Min Typ Max Unit POWER CONSUMPTION Operational Battery Current (RMS with Tx = 7.812 kHz Square Wave) BUS Load = 1380 Ω to GND, 3.6 nF to GND BUS Load = 257 Ω to GND, 20.2 nF to GND Battery Bus Low Input Current After SLEEP Toggle Low to High; Prior to Tx Toggling IBAT(BUS L1) IBAT(BUS L2) IBAT(SLEEP) – 38.2 65 – – 1.1 6.4 3.0 8.5 µA IBAT(OP1) IBAT(OP2) – – 3.0 22.4 11.5 32 mA mA Freescale Semiconductor, Inc... After Tx Toggle High to Low Sleep State Battery Current VSLEEP = 0 V BUS BUS Input Receiver Threshold (Note 5) Threshold High (Bus Increasing until Rx ≥ 3.0 V) Threshold Low (Bus Decreasing until Rx ≤ 3.0 V) Threshold in Sleep State (SLEEP = 0 V) Hysteresis (VBUS(IH) - VBUS(IL), SLEEP = 0 V) BUS-Out Voltage (257 Ω ≤ RBUS(L) to GND ≤ 1380 Ω) 8.2 V ≤ VBAT ≤ 16 V, Tx = 5.0 V 4.25 V ≤ VBAT ≤ 8.2 V, Tx = 5.0 V Tx = 0 V BUS Short Circuit Output Current Tx = 5.0 V, -2.0 V ≤ VBUS ≤ 4.8 V BUS Leakage Current -2.0 V ≤ VBUS ≤ 0 V 0 V ≤ VBUS ≤ VBAT BUS Thermal Shutdown (Note 6) (Tx = 5.0 V, IBUS = -0.1 mA) Increase Temperature until VBUS ≤ 2.5 V BUS Thermal Shutdown Hysteresis (Note 7) TBUS(LIM) - TBUS(REEN) BUS and LOAD Current with Loss of VBAT or GND (IBAT = 0 µA) (see Figure 2) -18 V ≤ VBUS ≤ 9.0 V -18 V ≤ VLOAD ≤ 9.0 V IBUS (LOSS) ILOAD (LOSS) – – 0.00 0.00 0.1 0.1 TBUS(LIMHYS) 10 12 15 mA IBUS(LEAK1) IBUS(LEAK2) TBUS(LIM) 150 170 190 °C -500 – -55 189 – 500 °C VBUS(OUT1) VBUS(OUT2) VBUS(OUT3) IBUS(SHORT) 60 129 170 µA 6.25 VBAT - 1.6 – 6.9 – 0.27 8.0 VBAT 0.7 mA VBUS(IH) VBUS(IL) BUSTH(SLEEP) VBUS(HYST) 4.25 – 2.4 0.1 3.9 3.7 3.0 0.2 – 3.5 3.4 0.6 V V Notes 5. Typical threshold value is the approximate actual occurring switch point value with VBAT = 13 V, TA = 25°C. 6. 7. Device characterized but not production tested for thermal shutdown. Device characterized but not production tested for thermal shutdown hysteresis. MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA For More Information On This Product, Go to: www.freescale.com 33390 5 Freescale Semiconductor, Inc. STATIC ELECTRICAL CHARACTERISTICS (continued) Characteristics noted under conditions of 7.0 V ≤ VBAT ≤ 16 V, -40°C ≤ TA ≤ 125°C, SLEEP = 5.0 V unless otherwise noted. Typical values reflect the parameter's approximate midpoint average value with VBAT = 13 V, TA = 25°C. All positive currents are into the pin. All negative currents are out of the pin. Characteristic Symbol Min Typ Max Unit BUS (continued) LOAD Output IL = 6.0 mA Unpowered LOAD Output VBAT = 0 V, IL = 6.0 mA LDIO 0.3 0.56 0.9 LON – 0.07 0.2 V V Tx Freescale Semiconductor, Inc... Tx Input Voltage Tx Input Logic Low Level Tx Input Logic High Level Tx Input Current VTx = 5.0 V VTx = 0 V ITx(IH) ITx(IL) 50 -2.0 106 0.23 200 2.0 VTx(IL) VTx(IH) – 3.5 – – 0.8 – V µA LOOP 4X/LOOP Input Current V4X/LOOP = 0 V (Normal Mode) V4X/LOOP = 5.0 V (4X Mode) 4X/LOOP Input Threshold (Tx = 4096 Hz Square Wave) Normal Mode to Loopback Mode Loopback Mode to 4X Mode V4X/LOOP(IL) V4X/LOOP(IH) 1.1 3.2 1.31 3.43 1.5 3.6 I4X/LOOP(IL) I4X/LOOP(IH) -200 -200 -60 110 200 200 V µA Rx Rx Output Voltage Low VBUS = 0 V, IRx = 1.6 mA Rx Output Voltage High VBUS = 7.0 V, IRx = -200 µA Rx Output Current VRx = High; Short Circuit Protection Limits IR x 2.0 3.67 8.0 VRx(HIGH) 4.25 4.58 4.75 mA VRx(LOW) 0.01 0.18 0.4 V V SLEEP SLEEP Input Current µA ISLEEP(IL) ISLEEP(IH) – 1.0 -0.23 6.21 -2.0 20 VSLEEP = 0 V VSLEEP = 5.0 V 33390 6 MOTOROLA ANALOG For More Information On This Product,INTEGRATED CIRCUIT DEVICE DATA Go to: www.freescale.com Freescale Semiconductor, Inc. DYNAMIC ELECTRICAL CHARACTERISTICS Characteristics noted under conditions of 7.0 V ≤ VBAT ≤ 16 V, -40°C ≤ TA ≤ 125°C, SLEEP = 5.0 V unless otherwise noted. Typical values reflect the parameter's approximate midpoint average value with VBAT = 13 V, TA = 25°C. All positive currents are into the pin. All negative currents are out of the pin. Characteristic Symbol Min Typ Max Unit BUS BUS Voltage Rise Time (Note 8) (9.0 V ≤ VBAT ≤ 16 V, Tx = 7.812 kHz Square Wave) (see Figure 3) BUS Load = 3,300 pF and 1.38 kΩ to GND BUS Load = 16,500 pF and 300 Ω to GND BUS Voltage Fall Time (Note 8) (9.0 V ≤ VBAT ≤ 16 V, Tx = 7.812 kHz Square Wave) (see Figure 3) BUS Load = 3,300 pF and 1.38 kΩ to GND BUS Load = 16,500 pF and 300 Ω to GND Pulse Width Distortion Time (9.0 V ≤ VBAT ≤ 16 V, Tx = 7.812 kHz Square Wave) (see Figure 4) BUS Load = 3,300 pF and 1.38 kΩ to GND Propagation Delay Tx Threshold to Rx Threshold tpd (BUS) – 17.7 25 tpwd (BUS) 35 62 93 µs tfall (BUS) 9.0 9.0 10.50 11.17 15 15 µs trise (BUS) 9.0 9.0 11.15 11.86 15 15 µs µs Freescale Semiconductor, Inc... Tx Tx to BUS Delay Time (Tx = 2.5 V to VBUS = 3.875 V) (see Figure 5) 4X Mode Normal Mode SLEEP to Tx Setup Time (see Figure 5) tTxDelay – 13 tSLEEPTxSU 80 2.6 17.3 40 4.0 24 – µs µs Rx Rx Output Delay Time (Tx = 2.5 V to VBUS = 3.875 V) (see Figure 6) Low-to-Output High High-to-Output Low Rx Output Transition Time (CRx = 50 pF to GND, 10% and 90% Points) (see Figure 7) Low-to-Output High High-to-Output Low Rx Output Transition Time (Note 9) (CRx = 50 pF to GND, SLEEP = 0 V, 10% and 9