(MC33201 - MC33204) Rail-to-Rail Operational Amplifiers

MC33201, MC33202, MC33204, NCV33202, NCV33204 Low Voltage, Rail−to−Rail Operational Amplifiers The MC33201/2/4 family of operational amplifiers provide rail−to−rail operation on both the input and output. The inputs can be driven as high as 200 mV beyond the supply rails without phase reversal on the outputs, and the output can swing within 50 mV of each rail. This rail−to−rail operation enables the user to make full use of the supply voltage range available. It is designed to work at very low supply voltages (± 0.9 V) yet can operate with a supply of up to +12 V and ground. Output current boosting techniques provide a high output current capability while keeping the drain current of the amplifier to a minimum. Also, the combination of low noise and distortion with a high slew rate and drive capability make this an ideal amplifier for audio applications. http://onsemi.com PDIP−8 P, VP SUFFIX CASE 626 1 SOIC−8 D, VD SUFFIX CASE 751 8 8 1 • Low Voltage, Single Supply Operation • • • • • • • • • • (+1.8 V and Ground to +12 V and Ground) Input Voltage Range Includes both Supply Rails Output Voltage Swings within 50 mV of both Rails No Phase Reversal on the Output for Over−driven Input Signals www.DataSheet4U.com High Output Current (ISC = 80 mA, Typ) Low Supply Current (ID = 0.9 mA, Typ) 600 W Output Drive Capability Extended Operating Temperature Ranges (−40° to +105°C and −55° to +125°C) Typical Gain Bandwidth Product = 2.2 MHz NCV Prefix for Automotive and Other Applications Requiring Site and Control Changes Pb−Free Packages are Available 8 1 Micro8] DM SUFFIX CASE 846A PDIP−14 P, VP SUFFIX CASE 646 14 1 SOIC−14 D, VD SUFFIX CASE 751A 14 1 14 1 TSSOP−14 DTB SUFFIX CASE 948G ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 10 of this data sheet. DEVICE MARKING INFORMATION See general marking information in the device marking section on page 12 of this data sheet. © Semiconductor Components Industries, LLC, 2006 October, 2006 − Rev. 14 1 Publication Order Number: MC33201/D MC33201, MC33202, MC33204, NCV33202, NCV33204 PIN CONNECTIONS MC33201 All Case Styles NC 1 2 Inputs 3 VEE 4 6 5 Output NC Inputs 2 8 7 NC VCC Output 1 1 2 Inputs 1 3 1 4 MC33204 All Case Styles 14 Output 4 13 12 11 10 2 3 Inputs 4 VEE Inputs 3 Output 3 VCC 4 5 6 (Top View) MC33202 All Case Styles Output 1 1 2 Inputs 1 3 VEE 4 2 1 9 8 Output 2 7 (Top View) VCC Output 2 8 7 6 Inputs 2 5 (Top View) VCC VCC VCC Vin − VEE Vout Vin + VCC VEE This device contains 70 active transistors (each amplifier). Figure 1. Circuit Schematic (Each Amplifier) http://onsemi.com 2 MC33201, MC33202, MC33204, NCV33202, NCV33204 MAXIMUM RATINGS Rating Supply Voltage (VCC to VEE) Input Differential Voltage Range Common Mode Input Voltage Range (Note 2) Output Short Circuit Duration Maximum Junction Temperature Storage Temperature Maximum Power Dissipation Symbol VS VIDR VCM ts TJ Tstg PD Value +13 Note 1 VCC + 0.5 V to VEE − 0.5 V Note 3 +150 − 65 to +150 Note 3 Unit V V V sec °C °C mW DC ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Input Offset Voltage VIO (max) MC33201 MC33202, NCV33202 MC33204, NCV33204 Output Voltage Swing VOH (RL = 10 kW) VOL (RL = 10 kW) Power Supply Current per Amplifier (ID) VCC = 2.0 V VCC = 3.3 V VCC = 5.0 V Unit mV ± 8.0 ±10 ±12 1.9 0.10 1.125 ± 8.0 ±10 ±12 3.15 0.15 1.125 ± 6.0 ± 8.0 ±10 4.85 0.15 1.125 Vmin Vmax mA Specifications at VCC = 3.3 V are guaranteed by the 2.0 V and 5.0 V tests. VEE = GND. DC ELECTRICAL CHARACTERISTICS (VCC = + 5.0 V, VEE = Ground, TA = 25°C, unless otherwise noted.) Characteristic Input Offset Voltage (VCM 0 V to 0.5 V, VCM 1.0 V to 5.0 V) MC33201: TA = + 25°C MC33201: TA = − 40° to +105°C MC33201V: TA = − 55° to +125°C MC33202: TA = + 25°C MC33202: TA = − 40° to +105°C MC33202V: TA = − 55° to +125°C NCV33202V: TA = − 55° to +125°C (Note 4) MC33204: TA = + 25°C MC33204: TA = − 40° to +105°C MC33204V: TA = − 55° to +125°C NCV33204: TA = − 55° to +125°C Input Offset Voltage Temperature Coefficient (RS = 50 W) TA = − 40° to +105°C TA = − 55° to +125°C Input Bias Current (VCM = 0 V to 0.5 V, VCM = 1.0 V to 5.0 V) TA = + 25°C TA = − 40° to +105°C TA = − 55° to +125°C Figure 3 Symbol ⎮VIO⎮ Min − − − − − − − − − − − − − − − − Typ − − − − − − − − − − − 2.0 2.0 80 100 − Max 6.0 9.0 13 8.0 11 14 14 10 13 17 17 − − 200 250 500 mV/°C Unit mV 4 DVIO/DT 5, 6 ⎮IIB⎮ nA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The differential input voltage of each amplifier is limited by two internal parallel back−to−back diodes. For additional differential input voltage range, use current limiting resistors in series with the input pins. 2. The input common mode voltage range is limited by internal diodes connected from the inputs to both supply rails. Therefore, the voltage on either input must not exceed either supply rail by more than 500 mV. 3. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded. (See Figure 2) 4. NCV33202 and NCV33204 are qualified for automotive use. http://onsemi.com 3 MC33201, MC33202, MC33204, NCV33202, NCV33204 DC ELECTRICAL CHARACTERISTICS (cont.) (VCC = + 5.0 V, VEE = Ground, TA = 25°C, unless otherwise noted.) Characteristic Input Offset Current (VCM = 0 V to 0.5 V, VCM = 1.0 V to 5.0 V) TA = + 25°C TA = − 40° to +105°C TA = − 55° to +125°C Common Mode Input Voltage Range Large Signal Voltage Gain (VCC = + 5.0 V, VEE = − 5.0 V) RL = 10 kW RL = 600 W Output Voltage Swing (VID = ± 0.2 V) RL = 10 kW RL = 10 kW RL = 600 W RL = 600 W Common Mode Rejection (Vin = 0 V to 5.0 V) Power Supply Rejection Ratio VCC/VEE = 5.0 V/GND to 3.0 V/GND Output Short Circuit Current (Source and Sink) Power Supply Current per Amplifier (VO = 0 V) TA = − 40° to +105°C TA = − 55° to +125°C Figure − Symbol ⎮IIO⎮ Min − − − VEE 50 25 4.85 − 4.75 − 60 500 13, 14 15 ISC ID 50 − − Typ 5.0 10 − − 300 250 4.95 0.05 4.85 0.15 90 25 80 0.9 0.9 Max 50 100 200 VCC − − V VOH VOL VOH VOL 11 12 CMR PSRR − − 1.125 1.125 − 0.15 − 0.25 − dB mV/V mA mA V kV/V Unit nA − 7 VICR AVOL 8, 9, 10 AC ELECTRICAL CHARACTERISTICS (VCC = + 5.0 V, VEE = Ground, TA = 25°C, unless otherwise noted.) Characteristic Slew Rate (VS = ± 2.5 V, VO = − 2.0 V to + 2.0 V, RL = 2.0 kW, AV = +1.0) Gain Bandwidth Product (f = 100 kHz) Gain Margin (RL = 600 W, CL = 0 pF) Phase Margin (RL = 600 W, CL = 0 pF) Channel Separation (f = 1.0 Hz to 20 kHz, AV = 100) Power Bandwidth (VO = 4.0 Vpp, RL = 600 W, THD ≤ 1 %) Total Harmonic Distortion (RL = 600 W, VO = 1.0 Vpp, AV = 1.0) f = 1.0 kHz f = 10 kHz Open Loop Output Impedance (VO = 0 V, f = 2.0 MHz, AV = 10) Differential Input Resistance (VCM = 0 V) Differential Input Capacitance (VCM = 0 V) Equivalent Input Noise Voltage (RS = 100 W) f = 10 Hz f = 1.0 kHz Equivalent Input Noise Current f = 10 Hz f = 1.0 kHz 25 24 Figure 16, 26 17 20, 21, 22 20, 21, 22 23 Symbol SR 0.5 GBW AM OM CS BWP THD − − ⎮ZO⎮ Rin Cin en − − − − − − − 0.002 0.008 100 200 8.0 25 20 0.8 0.2 − − − − − − − − − W kW pF nV/ Hz pA/ Hz − − − − − 1.0 2.2 12 65 90 28 − − − − − − MHz dB Deg dB kHz % Min Typ Max Unit V/ms 25 in http://onsemi.com 4 MC33201, MC33202, MC33204, NCV33202, NCV33204 PD(max) , MAXIMUM POWER DISSIPATION (mW 2500 8 and 14 Pin DIP Pkg 2000 1500 1000 500 SOIC−8 Pkg TSSOP−14 Pkg SO−14 Pkg PERCENTAGE OF AMPLIFIERS (%) 40 35 30 25 20 15 10 5.0 0 −10 − 8.0 − 6.0 − 4.0 − 2.0 0 2.0 4.0 6.0 VIO, INPUT OFFSET VOLTAGE (mV) 8.0 10 360 amplifiers tested from 3 (MC33204) wafer lots VCC = + 5.0 V VEE = Gnd TA = 25°C DIP Package 0 − 55 − 40 − 25 0 25 50 85 TA, AMBIENT TEMPERATURE (°C) 125 Figure 2. Maximum Power Dissipation versus Temperature Figure 3. Input Offset Voltage Distribution 50 40 PERCENTAGE OF AMPLIFIERS (%) 30 20 10 0 − 50 − 40 − 30 − 20 360 amplifiers tested from 3 (MC33204) wafer lots VCC = + 5.0 V VEE = Gnd TA = 25°C DIP Package 200 I IB , INPUT BIAS CURRENT (nA) VCC = + 5.0 V VEE = Gnd 160 120 80 VCM > 1.0 V 40 0 − 55 − 40 − 25 VCM = 0 V to 0.5 V −10 0 10 20 30 40 50 0 25 70 85 125 TCV , INPUT OFFSET VOLTAGE TEMPERATURE COEFFICIENT (mV/°C) IO TA, AMBIENT TEMPERATURE (°C) Figure 4. Input Offset Voltage Temperature Coefficient Distribution Figure 5. Input Bias Current versus Temperature 150 I IB , INPUT BIAS CURRENT (nA) 100 50 0 − 50 −100 −150 − 200 − 250 0 VCC = 12 V VEE = Gnd TA = 25°C 2.0 4.0 6.0 8.0 10 VCM, INPUT COMMON MODE VOLTAGE (V) 12 A VOL , OPEN LOOP VOLTAGE GAIN (kV/V) 300 260 220 180 VCC = + 5.0 V VEE = Gnd RL = 600 W DVO = 0.5 V to 4.5 V 0 25 70 85 TA, AMBIENT TEMPERATURE (°C) 105 125 140 100 − 55 − 40 − 25 Figure 6. Input Bias Current versus Common Mode Voltage Figure 7. Open Loop Voltage Gain versus Temperature http://onsemi.com 5 MC33201, MC33202, MC33204, NCV33202, NCV33204 VSAT, OUTPUT SATURATION VOLTAGE (V) 12 VO , OUTPUT VOLTAGE (Vpp ) 10 8.0 6.0 4.0 2.0 0 ±1.0 RL = 600 W TA = 25°C VCC TA = − 55°C TA = 125°C TA = 25°C VCC − 0.2 V VCC − 0.4 V VEE + 0.4 V TA = 25°C TA = − 55°C 0 5.0 10 IL, LOAD CURRENT (mA) 15 VEE + 0.2 V VEE 20 VCC = + 5.0 V VEE = − 5.0 V TA = 125°C ± 2.0 ± 3.0 ± 4.0 ± 5.0 VCC,⎮VEE⎮ SUPPLY VOLTAGE (V) ± 6.0 Figure 8. Output Voltage Swing versus Supply Voltage Figure 9. Output Saturation Voltage versus Load Current CMR, COMMON MODE REJECTION (dB) 12 VO, OUT