(MC33178 / MC33179) Low Noise Operational Amplifiers

MC33178, MC33179 Low Power, Low Noise Operational Amplifiers The MC33178/9 series is a family of high quality monolithic amplifiers employing Bipolar technology with innovative high performance concepts for quality audio and data signal processing applications. This device family incorporates the use of high frequency PNP input transistors to produce amplifiers exhibiting low input offset voltage, noise and distortion. In addition, the amplifier provides high output current drive capability while consuming only 420 mA of drain current per amplifier. The NPN output stage used, exhibits no deadband crossover distortion, large output voltage swing, excellent phase and gain margins, low open−loop high frequency output impedance, symmetrical source and sink AC frequency performance. The MC33178/9 family offers both dual and quad amplifier versions in several package options. Features http://onsemi.com DUAL PDIP−8 P SUFFIX CASE 626 1 SOIC−8 D SUFFIX CASE 751 8 8 1 • • • • • • • • • • 600 W Output Drive Capability Large Output Voltage Swing Low Offset Voltage: 0.15 mV (Mean) Low T.C. of Input Offset Voltage: 2.0 mV/°C Low Total Harmonic Distortion: 0.0024% www.DataSheet4U.com (@ 1.0 kHz w/600 W Load) High Gain Bandwidth: 5.0 MHz High Slew Rate: 2.0 V/ms Dual Supply Operation: ±2.0 V to ±18 V ESD Clamps on the Inputs Increase Ruggedness without Affecting Device Performance Pb−Free Packages are Available 8 1 Micro8 DM SUFFIX CASE 846A QUAD PDIP−14 P SUFFIX CASE 646 1 SOIC−14 D SUFFIX CASE 751A 14 14 VCC 1 Iref Iref Vin − Vin + CC 14 1 TSSOP−14 DTB SUFFIX CASE 948G ORDERING INFORMATION VO CM See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. DEVICE MARKING INFORMATION VEE See general marking information in the device marking section on page 4 of this data sheet. Figure 1. Representative Schematic Diagram (Each Amplifier) © Semiconductor Components Industries, LLC, 2006 October, 2006 − Rev. 7 1 Publication Order Number: MC33178/D MC33178, MC33179 MAXIMUM RATINGS Rating Supply Voltage (VCC to VEE) Input Differential Voltage Range Input Voltage Range Output Short Circuit Duration (Note 2) Maximum Junction Temperature Storage Temperature Range Maximum Power Dissipation Operating Temperature Range Symbol VS VIDR VIR tSC TJ Tstg PD TA Value +36 Note 1 Note 1 Indefinite +150 −60 to +150 Note 2 −40 to +85 Unit V V V sec °C °C mW °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Either or both input voltages should not exceed VCC or VEE. 2. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded. (See power dissipation performance characteristic, Figure 2.) ORDERING INFORMATION Device MC33178D MC33178DG MC33178DR2 MC33178DR2G MC33178P MC33178PG MC33178DMR2 MC33178DMR2G MC33179D MC33179DG MC33179DR2 MC33179DR2G MC33179P MC33179PG MC33179DTBR2G Package SOIC−8 SOIC−8 (Pb−Free) SOIC−8 SOIC−8 (Pb−Free) PDIP−8 PDIP−8 (Pb−Free) Micro8 Micro8 (Pb−Free) SOIC−14 SOIC−14 (Pb−Free) SOIC−14 SOIC−14 (Pb−Free) PDIP−14 PDIP−14 (Pb−Free) TSSOP−14 (Pb−Free) 25 Units / Rail 2500 / Tape & Reel 55 Units / Rail 4000 / Tape & Reel 50 Units / Rail 2500 / Tape & Reel 98 Units / Rail Shipping † 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MC33178, MC33179 MARKING DIAGRAMS DUAL PDIP−8 CASE 626 8 MC33178P AWL YYWWG 1 1 8 33178 ALYW G 1 SOIC−8 CASE 751 14 MC33179P AWLYYWWG PDIP−14 CASE 646 QUAD SOIC−14 CASE 751A 14 MC33179DG AWLYWW 1 Micro8 CASE 846A 8 3178 AYWG G 1 A = Assembly Location WL, L = Wafer Lot YY, Y = Year WW, W = Work Week G or G = Pb−Free Package (Note: Microdot may be in either location) TSSOP−14 CASE 948G 14 MC33 179 ALYWG G 1 PIN CONNECTIONS DUAL CASE 626/751/846A Output 1 Inputs 1 VEE 1 2 3 4 8 QUAD CASE 646/751A/948G Output 1 Inputs 1 VCC Inputs 2 Output 2 1 2 3 4 5 6 7 + − 2 3 + − − + − + 14 13 12 11 10 9 8 − + 7 VCC Output 2 Inputs 2 Output 4 Inputs 4 VEE Inputs 3 Output 3 − +5 6 1 4 (Top View) (Top View) http://onsemi.com 3 MC33178, MC33179 DC ELECTRICAL CHARACTERISTICS (VCC = +15 V, VEE = −15 V, TA = 25°C, unless otherwise noted.) Characteristics Input Offset Voltage (RS = 50 W, VCM = 0 V, VO = 0 V) (VCC = +2.5 V, VEE = −2.5 V to VCC = +15 V, VEE = −15 V) TA = +25°C TA = −40° to +85°C Average Temperature Coefficient of Input Offset Voltage (RS = 50 W, VCM = 0 V, VO = 0 V) TA = −40° to +85°C Input Bias Current (VCM = 0 V, VO = 0 V) TA = +25°C TA = −40° to +85°C Input Offset Current (VCM = 0 V, VO = 0 V) TA = +25°C TA = −40° to +85°C Common Mode Input Voltage Range (DVIO = 5.0 mV, VO = 0 V) Large Signal Voltage Gain (VO = −10 V to +10 V, RL = 600 W) TA = +25°C TA = −40° to +85°C Output Voltage Swing (VID = ±1.0 V) (VCC = +15 V, VEE = −15 V) RL = 300 W RL = 300 W RL = 600 W RL = 600 W RL = 2.0 kW RL = 2.0 kW (VCC = +2.5 V, VEE = −2.5 V) RL = 600 W RL = 600 W Common Mode Rejection (Vin = ±13 V) Power Supply Rejection VCC/VEE = +15 V/ −15 V, +5.0 V/ −15 V, +15 V/ −5.0 V Output Short Circuit Current (VID = ±1.0 V, Output to Ground) Source (VCC = 2.5 V to 15 V) Sink (VEE = −2.5 V to −15 V) Power Supply Current (VO = 0 V) (VCC = 2.5 V, VEE = −2.5 V to VCC = +15 V, VEE = −15 V) MC33178 (Dual) TA = +25°C TA = −40° to +85°C MC33179 (Quad) TA = +25°C TA = −40° to +85°C 6 7, 8 Figure 3 Symbol |VIO| − − 3 DVIO/DT − 4, 5 IIB − − − − −13 − 50 25 2.0 100 − 5.0 − −14 +14 200 − − nA 500 600 nA 50 60 − +13 − − V VO+ VO− VO+ VO− VO+ VO− VO+ VO− 12 13 14, 15 CMR PSR 80 ISC +50 −50 110 +80 −100 − mA − − mA − − − − − − 1.7 − 1.4 1.6 2.4 2.6 − − +12 − +13 − 1.1 − 80 +12 −12 +13.6 −13 +14 −13.8 1.6 −1.6 110 − − − −12 − −13 − −1.1 − dB dB V kV/V 0.15 − 3.0 4.0 mV/°C Min Typ Max Unit mV |IIO| VICR AVOL 9, 10, 11 16 ID http://onsemi.com 4 MC33178, MC33179 AC ELECTRICAL CHARACTERISTICS (VCC = +15 V, VEE = −15 V, TA = 25°C, unless otherwise noted.) Characteristics Slew Rate (Vin = −10 V to +10 V, RL = 2.0 kW, CL = 100 pF, AV = +1.0 V) Gain Bandwidth Product (f = 100 kHz) AC Voltage Gain (RL = 600 W, VO = 0 V, f = 20 kHz) Unity Gain Bandwidth (Open−Loop) (RL = 600 W, CL = 0 pF) Gain Margin (RL = 600 W, CL = 0 pF) Phase Margin (RL = 600 W, CL = 0 pF) Channel Separation (f = 100 Hz to 20 kHz) Power Bandwidth (VO = 20 Vpp, RL = 600 W, THD ≤ 1.0%) Total Harmonic Distortion (RL = 600 W,, VO = 2.0 Vpp, AV = +1.0 V) (f = 1.0 kHz) (f = 10 kHz) (f = 20 kHz) Open Loop Output Impedance (VO = 0 V, f = 3.0 MHz, AV = 10 V) Differential Input Resistance (VCM = 0 V) Differential Input Capacitance (VCM = 0 V) Equivalent Input Noise Voltage (RS = 100 W,) f = 10 Hz f = 1.0 kHz Equivalent Input Noise Current f = 10 Hz f = 1.0 kHz 28 26 21, 23, 24 22, 23, 24 25 Figure 17, 32 18 19, 20 Symbol SR 1.2 GBW AVO BW Am fm CS BWp THD − − − 27 |ZO| Rin Cin en − − − − − − − 0.0024 0.014 0.024 150 200 10 8.0 7.5 0.33 0.15 − − − − − − − − − − W kW pF nV/ √ Hz 2.5 − − − − − − 2.0 5.0 50 3.0 15 60 −120 32 − − − − − − − − MHz dB MHz dB Deg dB kHz % Min Typ Max Unit V/ms 29 in pA/ √ Hz PD (MAX), MAXIMUM POWER DISSIPATION (mW) 2400 V IO , INPUT OFFSET VOLTAGE (mV) 2000 1600 MC33179D 1200 800 400 0 −60 −40 −20 MC33178D MC33178P/9P 4.0 3.0 2.0 1.0 0 −1.0 −2.0 −3.0 −4.0 −55 −25 0 25 50 75 100 125 Unit 2 Unit 3 Unit 1 VCC = +15 V VEE = −15 V RS = 10 W VCM = 0 V 0 20 40 60 80 100 120 140 160 180 TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 2. Maximum Power Dissipation versus Temperature Figure 3. Input Offset Voltage versus Temperature for 3 Typical Units http://onsemi.com 5 MC33178, MC33179 160 I IB , INPUT BIAS CURRENT (nA) I IB , INPUT BIAS CURRENT (nA) 140 120 100 80 60 40 20 0 −15 −10 −5.0 0 5.0 VCM, COMMON MODE VOLTAGE (V) 10 15 VCC = +15 V VEE = −15 V TA = 25°C 120 110 100 90 80 70 60 −55 VCC = +15 V VEE = −15 V VCM = 0 V −25 0 25 50 75 TA, AMBIENT TEMPERATURE (°C) 100 125 Figure 4. Input Bias Current versus Common Mode Voltage V ICR, INPUT COMMON MODE VOLTAGE RANGE (V) Figure 5. Input Bias Current versus Temperature VCC −0.5 V VCC −1.0 V VCC −1.5 V VCC −2.0 V VCC = +5.0 V to +18 V VEE = −5.0 V to −18 V DVIO = 5.0 mV AVOL, OPEN LOOP VOLTAGE GAIN (kV/V) VCC 250 200 150 100 50 0 −55 VCC = +15 V VEE = −15 V f = 10 Hz DVO = 10 V to +10 V RL = 600 W −25 0 25 50 75 100 125 VEE +1.0 V VEE +0.5 V VEE −55 −25 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 6. Input Common Mode Voltage Range versus Temperature Figure 7. Open Loop Voltage Gain versus Temperature A VOL, OPEN LOOP VOLTAGE GAIN (dB) 50 40 30 20 10 0 −10 −20 1A 1B VCC = +15 V VEE = −15 V VO = 0 V TA = 25°C 80 , EXCESS PHASE (DEGREES) 100 120 140 160 180 200 220 240 260 20 280 VO , OUTPUT VOLTAGE (Vpp ) 40 35 30 25 20 15 10 5.0 0 0 5.0 10 15 VCC, |VEE|, SUPPLY VOLTAGE (V) 20 TA = 25°C RL = 10 kW RL = 600 W 1A) Phase (RL = 600 W) 2B −30 2A) Phase (RL = 600 W, CL = 300 pF) 2A −40 1B) Gain (RL = 600 W) 2B) Gain (RL = 600 W, CL = 300 pF) −50 2 34 5 6 7 8 9 10 f, FREQUENCY (Hz) φ Figure 8. Voltage Gain and Phase versus Frequency Figure 9. Output Voltage Swing versus Supply Voltage http://onsemi.com 6 MC33178, MC33179 V sat , OUTPUT SATURATION VOLTAGE (V) VCC TA = +125°C