Single IGBT Gate Driver

MC33153 Single IGBT Gate Driver The MC33153 is specifically designed as an IGBT driver for high power applications that include ac induction motor control, brushless dc motor control and uninterruptable power supplies. Although designed for driving discrete and module IGBTs, this device offers a cost effective solution for driving power MOSFETs and Bipolar Transistors. Device protection features include the choice of desaturation or overcurrent sensing and undervoltage detection. These devices are available in dual−in−line and surface mount packages. Features http://onsemi.com MARKING DIAGRAMS 8 SOIC−8 D SUFFIX CASE 751 1 33153 ALYW G • • • • • • • • High Current Output Stage: 1.0 A Source/2.0 A Sink Protection Circuits for Both Conventional and Sense IGBTs Programmable Fault Blanking Time Protection against Overcurrent and Short Circuit Undervoltage Lockout Optimized for IGBT’s Negative Gate Drive Capability Cost Effectively Drives Power MOSFETs and Bipolar Transistors Pb−Free Packages are Available 1 VCC 6 VCC VCC Short Circuit Latch S Q R VEE Overcurrent Latch S Q R Short Circuit Comparator www.DataSheet4U.com 1 8 PDIP−8 P SUFFIX CASE 626 1 MC33153P AWL YYWWG Fault Output 7 VCC Overcurrent Comparator 130 mV 65 mV VCC 270 mA VEE VCC 2 Current Sense 1 Input Kelvin GND A = Assembly Location L, WL = Wafer Lot Y, YY = Year W, WW = Work Week G or G = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTIONS Current Sense Input Kelvin GND VEE 1 2 3 4 (Top View) 8 Fault Blanking/ Desaturation Input 7 Fault Output 6 VCC 5 Drive Output Fault Blanking/ Desaturation Comparator 6.5 V VEE Fault 8 Blanking/ Desaturation Input VCC VCC Input 4 VEE Output Stage Drive 5 Output 100 k Input VCC Under Voltage Lockout ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. VEE 12 V/ 11 V 3 VEE This device contains 133 active transistors. Figure 1. Representative Block Diagram © Semiconductor Components Industries, LLC, 2006 1 July, 2006 − Rev. 5 Publication Order Number: MC33153/D MC33153 MAXIMUM RATINGS Rating Power Supply Voltage Logic Input Current Sense Input Blanking/Desaturation Input Gate Drive Output Source Current Sink Current Diode Clamp Current Fault Output Source Current Sink Current Power Dissipation and Thermal Characteristics D Suffix SO−8 Package, Case 751 Maximum Power Dissipation @ TA = 50°C Thermal Resistance, Junction−to−Air P Suffix DIP−8 Package, Case 626 Maximum Power Dissipation @ TA = 50°C Thermal Resistance, Junction−to−Air Operating Junction Temperature Operating Ambient Temperature Storage Temperature Range VCC to VEE Kelvin Ground to VEE (Note 1) Symbol VCC − VEE KGND − VEE Vin VS VBD IO Value 20 VEE −0.3 to VCC −0.3 to VCC −0.3 to VCC 1.0 2.0 1.0 mA 25 10 Unit V V V V A IFO PD RqJA PD RqJA TJ TA Tstg 0.56 180 1.0 100 +150 −40 to +105 −65 to +150 W °C/W W °C/W °C °C °C NOTE: ESD data available upon request. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Kelvin Ground must always be between VEE and VCC. ELECTRICAL CHARACTERISTICS (VCC = 15 V, VEE = 0 V, Kelvin GND connected to VEE. For typical values TA = 25°C, for min/max values TA is the operating ambient temperature range that applies (Note 2), unless otherwise noted.) Characteristic LOGIC INPUT Input Threshold Voltage High State (Logic 1) Low State (Logic 0) Input Current High State (VIH = 3.0 V) Low State (VIL = 1.2 V) DRIVE OUTPUT Output Voltage Low State (ISink = 1.0 A) High State (ISource = 500 mA) Output Pull−Down Resistor FAULT OUTPUT Output Voltage Low State (ISink = 5.0 mA) High State (ISource = 20 mA) SWITCHING CHARACTERISTICS Propagation Delay (50% Input to 50% Output CL = 1.0 nF) Logic Input to Drive Output Rise Logic Input to Drive Output Fall Drive Output Rise Time (10% to 90%) CL = 1.0 nF Drive Output Fall Time (90% to 10%) CL = 1.0 nF Propagation Delay Current Sense Input to Drive Output Fault Blanking/Desaturation Input to Drive Output ns tPLH(in/out) tPHL (in/out) tr tf tP(OC) tP(FLT) − − − − − 80 120 17 17 0.3 300 300 55 55 1.0 ns ns ms V VFL VFH − 12 0.2 13.3 1.0 − V VOL VOH RPD − 12 − 2.0 13.9 100 2.5 − 200 kW V VIH VIL IIH IIL − 1.2 − − 2.70 2.30 130 50 3.2 − mA 500 100 Symbol Min Typ Max Unit 2. Low duty cycle pulse techniques are used during test to maintain the junction temperature as close to ambient as possible. Tlow = −40°C for MC33153 Thigh = +105°C for MC33153 http://onsemi.com 2 MC33153 ELECTRICAL CHARACTERISTICS (continued) (VCC = 15 V, VEE = 0 V, Kelvin GND connected to VEE. For typical values TA = 25°C, for min/max values TA is the operating ambient temperature range that applies (Note 3), unless otherwise noted.) Characteristic UVLO Startup Voltage Disable Voltage COMPARATORS Overcurrent Threshold Voltage (VPin8 > 7.0 V) Short Circuit Threshold Voltage (VPin8 > 7.0 V) Fault Blanking/Desaturation Threshold (VPin1 > 100 mV) Current Sense Input Current (VSI = 0 V) FAULT BLANKING/DESATURATION INPUT Current Source (VPin8 = 0 V, VPin4 = 0 V) Discharge Current (VPin8 = 15 V, VPin4 = 5.0 V) TOTAL DEVICE Power Supply Current Standby (VPin 4 = VCC, Output Open) Operating (CL = 1.0 nF, f = 20 kHz) ICC − − 7.2 7.9 14 20 mA Ichg Idschg −200 1.0 −270 2.5 −300 − mA mA VSOC VSSC Vth(FLT) ISI 50 100 6.0 − 65 130 6.5 −1.4 80 160 7.0 −10 mV mV V mA VCC start VCC dis 11.3 10.4 12 11 12.6 11.7 V V Symbol Min Typ Max Unit 3. Low duty cycle pulse techniques are used during test to maintain the junction temperature as close to ambient as possible. Tlow = −40°C for MC33153 Thigh = +105°C for MC33153 ORDERING INFORMATION Device MC33153D MC33153DG MC33153DR2 MC33153DR2G MC33153P MC33153PG TA = −40° to +105°C Operating Temperature Range Package SOIC−8 SOIC−8 (Pb−Free) SOIC−8 SOIC−8 (Pb−Free) PDIP−8 PDIP−8 (Pb−Free) Shipping † 98 Units / Rail 98 Units / Rail 1000 / Tape & Reel 1000 / Tape & Reel 50 Units / Rail 50 Units / Rail †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1.5 I in , INPUT CURRENT (mA) VO , OUTPUT VOLTAGE (V) 16 14 12 10 8.0 6.0 4.0 2.0 16 0 0 1.0 2.0 3.0 4.0 5.0 VCC = 15 V TA = 25°C 1.0 0.5 VCC = 15 V TA = 25°C 0 0 2.0 4.0 6.0 8.0 10 12 14 Vin, INPUT VOLTAGE (V) Vin, INPUT VOLTAGE (V) Figure 2. Input Current versus Input Voltage Figure 3. Output Voltage versus Input Voltage http://onsemi.com 3 MC33153 V IH − V IL, INPUT THRESHOLD VOLTAGE (V) VCC = 15 V 3.0 2.8 2.6 2.4 2.2 2.0 −60 VIL VIH V IH − V IL, INPUT THRESHOLD VOLTAGE (V) 3.2 2.8 VIH 2.7 2.6 2.5 2.4 2.3 2.2 12 VIL TA = 25°C −40 −20 0 20 40 60 80 100 120 140 13 14 15 16 17 18 19 20 TA, AMBIENT TEMPERATURE (°C) VCC, SUPPLY VOLTAGE (V) Figure 4. Input Threshold Voltage versus Temperature Figure 5. Input Threshold Voltage versus Supply Voltage V OL, OUTPUT LOW STATE VOLTAGE (V) 2.0 1.5 ISink = 1.0 A = 500 mA V OL, OUTPUT LOW STATE VOLTAGE (V) 2.5 2.0 1.6 1.2 0.8 0.4 0 TA = 25°C VCC = 15 V 0 0.2 0.4 0.6 0.8 1.0 ISink, OUTPUT SINK CURRENT (A) = 250 mA 1.0 0.5 VCC = 15 V 0 −60 −40 −20 0 20 40 60 80 100 120 140 TA, AMBIENT TEMPERATURE (°C) Figure 6. Drive Output Low State Voltage versus Temperature Figure 7. Drive Output Low State Voltage versus Sink Current VOH , DRIVE OUTPUT HIGH STATE VOLTAGE (V) 14.0 13.9 13.8 13.7 13.6 13.5 −60 VCC = 15 V ISource = 500 mA −40 −20 0 20 40 60 80 100 120 140 VOH , DRIVE OUTPUT HIGH STATE VOLTAGE (V) 15.0 14.6 14.2 13.8 13.4 13.0 VCC = 15 V TA = 25°C 0 0.1 0.2 0.3 0.4 0.5 TA, AMBIENT TEMPERATURE (°C) ISource, OUTPUT SOURCE CURRENT (A) Figure 8. Drive Output High State Voltage versus Temperature Figure 9. Drive Output High State Voltage versus Source Current http://onsemi.com 4 MC33153 16 VO , DRIVE OUTPUT VOLTAGE (V) 14 12 10 8.0 6.0 4.0 2.0 0 50 55 60 65 70 75 80 VCC = 15 V VPin 4 = 0 V VPin 8 > 7.0 V TA = 25°C V Pin 7, FAULT OUTPUT VOLTAGE (V) 14 12 10 8.0 6.0 4.0 2.0 0 100 110 120 130 140 150 160 VCC = 15 V VPin 4 = 0 V VPin 8 > 7.0 V TA = 25°C VPin 1, CURRENT SENSE INPUT VOLTAGE (mV) VPin 1, CURRENT SENSE INPUT VOLTAGE (mV) Figure 10. Drive Output Voltage versus Current Sense Input Voltage Figure 11. Fault Output Voltage versus Current Sense Input Voltage V SOC, OVERCURRENT THRESHOLD VOLTAGE (mV) 70 68 66 64 62 60 −60 −40 VCC = 15 V V SOC, OVERCURRENT THRESHOLD VOLTAGE (mV) 70 68 66 64 62 60 12 TA = 25°C −20 0 20 40 60 80 100 120 140 14 16 VCC, SUPPLY VOLTAGE (V) 18 20 TA, AMBIENT TEMPERATURE (°C) Figure 12. Overcurrent Protection Threshold Voltage versus Temperature Figure 13. Overcurrent Protection Threshold Voltage versus Supply Voltage VSSC, SHORT CIRCUIT THRESHOLD VOLTAGE (mV) 135 VCC = 15 V VSSC, SHORT CIRCUIT THRESHOLD VOLTAGE (mV) 135 TA = 25°C 130 130 125 −60 −40 −20 0 20 40 60 80 100 120 140 125 12 14 16 VCC, SUPPLY VOLTAGE (V) 18 20 TA, AMBIENT TEMPERATURE (°C) Figure 14. Short Circuit Comparator Threshold Voltage versus Temperature Figure 15. Short Circuit Comparator Threshold Voltage versus Supply Voltage http://onsemi.com 5 MC33153 ISI , CURRENT SENSE INPUT CURRENT ( A μ 0 VCC = 15 V TA = 25°C −0.5 VO , DRIVE OUTPUT VOLTAGE (V) 16 14 12 10 8.0 6.0 4.0 2.0 0 6.0 6.2 6.4 6.6 6.8 7.0 VCC = 15 V VPin 4 = 0 V VPin 1 > 100 mV TA = 25°C −1.0 −1.5 0 2.0 4.0 6.0 8.0 10 12 14 16 VPin 1, CURRENT SENSE INPUT VOLTAGE (V) VPin 8, FAULT BLANKING/DESATURATION INPUT VOLTAGE (V) Figure 16. Current Sense Input Current versus Voltage