(MBR40H35PT - MBR40H60PT) Dual Schottky Barrier Rectifier

www.DataSheet4U.com MBR40H35PT thru MBR40H60PT New Product Vishay Semiconductors formerly General Semiconductor Reverse Voltage 35 to 60 V Forward Current 40 A Dual Schottky Barrier Rectifier Features TO-247AD (TO-3P) 0.245 (6.2) 0.225 (5.7) 0.645 (16.4) 0.625 (15.9) 0.323 (8.2) 0.313 (7.9) 0.203 (5.16) 0.193 (4.90) 0.078 REF (1.98) 10° 30 0.170 (4.3) 0.840 (21.3) 0.820 (20.8) 0.142 (3.6) 0.138 (3.5) 10 TYP. BOTH SIDES 1 2 3 0.086 (2.18) 0.076 (1.93) 1 REF. BOTH SIDES 0.118 (3.0) 0.108 (2.7) • Plastic package has Underwriters Laboratory Flammability Classifications 94 V-0 • Dual rectifier construction, positive center-tap • Metal silicon junction, majority carrier conduction • High surge capability • Low forward voltage drop, low power loss and high efficiency • For use in low voltage, high frequency inverters, free-wheeling, and polarity protection applications • Guardring for overvoltage protection • Rated for reverse surge and ESD • 175 °C maximum operation junction temperature Mechanical Data Case: JEDEC TO-247AD molded plastic body Terminals: Lead solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds, 0.17” (4.3 mm) from case Polarity: As marked Mounting Position: Any Mounting Torque: 10 in-lbs max. Weight: 0.2 oz., 5.6 g 0.127 (3.22) 0.160 (4.1) 0.140 (3.5) 0.795 (20.2) 0.775 (19.6) 0.117 (2.97) PIN 1 PIN 3 PIN 2 CASE 0.030 (0.76) 0.020 (0.51) 0.225 (5.7) 0.205 (5.2) 0.048 (1.22) 0.044 (1.12) Maximum Ratings & Thermal Characteristics Parameter Maximum repetitive peak reverse voltage Maximum working peak reverse voltage Maximum DC blocking voltage Maximum average forward rectified current (See Fig. 1) Peak repetitive forward current per leg at TC = 155 °C (rated VR, square wave, 20 KHZ) Non-repetitive avalanche energy per leg at 25 °C, IAS = 4 A, L = 10 mH Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method) Peak repetitive reverse surge current (1) Ratings at 25°C ambient temperature unless otherwise specified. Symbol MBR40H35PT MBR40H45PT MBR40H50PT MBR40H60PT VRRM VRWM VDC IF(AV) IFRM EAS IFSM IRRM ERSM VC RθJC dv/dt TJ TSTG 2.0 30 25 1.2 10,000 – 65 to +175 – 65 to +175 35 35 35 45 45 45 40 40 80 400 1.0 25 50 50 50 60 60 60 Unit V V V A A mJ A A mJ kV °C/W V/µs °C °C Peak non-repetitive reverse energy (8/20 µs waveform) Electrostatic discharge capacitor voltage Human body model: C = 100 pF, R = 1.5 kΩ Thermal resistance from junction to case per leg Voltage rate of change at (rated VR) Operating junction temperature range Storage temperature range Document Number 88794 4-Feb-03 www.vishay.com 1 MBR40H35PT thru MBR40H60PT Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (TC = 25°C unless otherwise noted) Parameter Maximum instantaneous forward voltage per leg (2) at at at at IF = IF = IF = IF = 20 20 40 40 A A A A TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ =125 °C TJ = 25 °C TJ =125°C Symbol MBR40H35PT, MBR40H45PT MBR40H50PT, MBR40H60PT Typ – 0.49 – 0.62 – 9.0 Max 0.63 0.55 0.73 0.66 150 25 Typ – 0.56 – 0.68 – 6.0 Max 0.69 0.60 0.83 0.72 150 25 Unit VF V µA mA Maximum instantaneous reverse current at rated DC blocking voltage per leg(2) IR Notes: (1) 2.0 µs pulse width, f = 1.0 KHZ (2) Pulse test: 300 µs pulse width, 1% duty cycle www.vishay.com 2 Document Number 88794 4-Feb-03 MBR40H35PT thru MBR40H60PT Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Fig. 1 – Forward Current Derating Curve 45 400 Fig. 2 – Maximum Non-Repetitive Peak Forward Surge Current Per Leg Peak Forward Surge Current (A) TJ = TJ max. 8.3ms Single Half Sine-Wave (JEDEC Method) 300 40 Average Forward Current (A) 35 30 25 20 15 10 5 0 0 25 50 75 100 125 150 175 200 100 1 10 100 Case Temperature (°C) Number of Cycles at 60 HZ Fig. 3 – Typical Instantaneous Forward Characteristics Per Leg Instantaneous Reverse Leakage Current (mA) 100 100 Fig. 4 – Typical Reverse Characteristics Per Leg TJ = 150°C Instantaneous Forward Current (A) 10 10 TJ = 150°C 1 TJ = 25°C 1 0.1 TJ = 125°C TJ = 125°C 0.1 MBR40H35PT -- MBR40H45PT MBR40H50PT -- MBR40H60PT 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.01 MBR40H35PT -- MBR40H45PT MBR40H50PT -- MBR40H60PT TJ = 25°C 0.001 0.01 0.0001 0 20 40 60 80 100 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 – Typical Junction Capacitance Per Leg 10000 Fig. 6 – Typical Transient Thermal Impedance Per Leg 10 1000 Transeint Thermal Impedance (°C/W) 1 10 100 pF - Junction Capacitance TJ = 25°C f = 1.0 MHZ Vsig = 50mVp-p 1 100 0.1 0.1 0.01 0.1 1 10 Reverse Voltage (V) t, Pulse Duration (sec.) www.vishay.com 3 Document Number 88794 4-Feb-03