(MBR40H35CT - MBR40H60CT) Dual Schottky Barrier Rectifiers

www.DataSheet4U.com MBR40H35CT thru MBR40H60CT New Product Vishay Semiconductors formerly General Semiconductor Reverse Voltage 35V to 60V Forward Current 40A Max. Junction Temperature 175°C Dual Schottky Barrier Rectifiers Features • • • • • Dual rectifier construction, positive center tap Metal silicon junction, majority carrier conduction Low power loss, high efficiency Guardring for overvoltage protection For use in high frequency inverters, free wheeling, and polarity protection applications TO-220AB (MBR40HxxCT) 0.398 (10.10) 0.382 (8.70) 0.055 (1.40) 0.047 (1.20) 0.343 (8.70) Typ. 0.150 (3.80) 0.139 (3.54) 0.114 (2.90) 0.106 (2.70) 0.154 (3.90) 0.138 (3.50) 0.638 (16.20) 0.598 (15.20) 0.370 (9.40) 0.354 (9.00) Dia. 0.185 (4.70) 0.169 (4.30) 0.055 (1.40) 0.049 (1.25) Mechanical Data Case: JEDEC TO-220AB molded plastic body Terminals: Plated leads, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds, 0.25" (6.35mm) from case Polarity: As marked Mounting Position: Any Mounting Torque: 10 in-lbs maximum Weight: 0.08oz., 2.24g Epoxy meets UL 94V-0 flammability rating 0.067 (1.70) Typ. 0.331 (8.40) Typ. 0.634 (16.10) 0.618 (15.70) 1 0.118 (3.00) Typ. PIN 2 3 1.161 (29.48) 1.105 (28.08) 0.102 (2.60) 0.087 (2.20) PIN 1 PIN 2 CASE 0.523 (13.28) 0.507 (12.88) 0.035 (0.90) 0.028 (0.70) PIN 3 0.100 (2.54) Typ. 0.064 (1.62) 0.056 (1.42) 0.200 (5.08) Typ. Dimensions in inches and (millimeters) 0.024 (0.60) 0.018 (0.45) Maximum Ratings Parameter (TC = 25°C unless otherwise noted) Symbol VRRM VRWM VDC Total device Per leg IF(AV) MBR40H MBR40H MBR40H MBR40H 35CT 45CT 50CT 60CT 35 35 35 45 45 45 40 20 350 1.0 20 22.5 10,000 –65 to +175 320 50 50 50 60 60 60 Unit V V V A Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum DC blocking voltage Maximum average forward rectified current (see fig. 1) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load IFSM Per leg IRRM ERSM EAS dv/dt TJ, TSTG A A mJ mJ V/µs °C www.vishay.com 1 Peak repetitive reverse current per leg at tp = 2µs, 1KHZ Peak non-repetitive reverse surge energy (8/20µs waveform) Non-repetitive avalanche energy at 25°C, IAS = 3.0A, L=5mH Voltage rate of change (rated VR) Operating junction and storage temperature range Document Number 88920 14-Jul-04 Per leg Per leg MBR40H35CT thru MBR40H60CT Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (TC = 25°C unless otherwise noted) Parameter Maximum repetitive peak reverse voltage Working peak reverse voltage Maximum DC blocking voltage Maximum instantaneous forward voltage per leg(1) at IF = 20A, at IF = 20A, at IF = 40A, at IF = 40A, TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C Symbol VRRM VRWM VDC MBR40H MBR40H MBR40H MBR40H 35CT 40CT 50CT 60CT 35 35 35 0.64 0.55 0.76 0.70 100 15 1200 920 45 45 45 50 50 50 0.68 0.60 0.83 0.73 60 60 60 Unit V V V VF V Maximum reverse current per leg TJ = 25°C at working peak reverse voltage (Note 1) TJ = 125°C Typical junction capacitance at 4.0V, 1MHz IR CJ µA mA pF Thermal Characteristics (TC = 25°C unless otherwise noted) Parameter Typical thermal resistance per leg Notes: (1) Pulse test: 300µs pulse width, 1% duty cycle. Symbol RθJC Value 1.8 Unit O C/W Ordering Information Product MBR40H35CT - MBR40H60CT Case TO-220AB Package Option Anti-Static tube, 50/tube, 1K/carton Package Code 45 www.vishay.com 2 Document Number 88920 14-Jul-04 MBR40H35CT thru MBR40H60CT Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Fig. 1 – Forward Current Derating Curve 50 400 Fig. 2 – Maximum Non-Repetitive Peak Forward Surge Current Per Leg Peak Forward Surge Current (A) 350 300 250 200 150 100 50 0 MBR40H35-45CT MBR40H50-60CT Average Forward Current (A) 40 30 20 10 MBR40H35-45CT MBR40H50-60CT 0 25 50 75 100 125 150 175 200 1 10 100 Case T emperature (°C) Number of Cycles at 60 HZ Fig. 3 – Typical Instantaneous Forward Characteristics Per Leg 100 1,000,000 100,000 Fig. 4 – Typical Reverse Leakage Characteristics Per Leg Instantaneous Forward Current (A) Instantaneous Reverse Current (µA) TJ = 175°C 10 TJ = 125°C MBR40H35-45CT MBR40H50-60CT TJ = 175°C TJ = 125°C 10,000 1,000 100 MBR40H35-45CT MBR40H50-60CT 1 10 TJ = 25°C 1 TJ = 25°C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.1 20 30 40 50 60 70 80 90 100 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 – Typical Junction Capacitance Per Leg 10000 10 Fig. 6 – Typical Transient Thermal Impedance Per Leg Transient Thermal Impedance (°C/W) Junction Capacitance (pF) 1000 1 MBR40H35-45CT MBR40H50-60CT MBR40H35-45CT MBR40H50-60CT 100 0.1 0.1 1 10 100 0.01 0.1 1 10 100 Reverse Voltage (V) t -- Pulse Duration (sec.) Document Number 88920 14-Jul-04 www.vishay.com 3