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Part Number |
MBR4060WTPBF |
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Manufacturer |
International Rectifier |
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Semiconductor DataSheet |
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DataSheet View |
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Bulletin PD-20814 rev. A 11/06
MBR4060WTPbF
SCHOTTKY RECTIFIER 40 Amp
IF(AV) = 40Amp VR = 60V
Major Ratings and Characteristics Characteristics
IF(AV) Rectangular waveform VRRM IFSM @ tp = 5 μs sine VF TJ @ 20 Apk, TJ=125°C (per leg)
Description/ Features Units
A V A V The MBR4060WTPbF center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. 150° C TJ operation Center tap TO-247 package High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Very low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Lead-Free ("PbF" suffix)
Values
40 60 1020 0.62
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- 55 to 150
°C
Case Styles
Base Common Cathode
2
1
3 2
Anode
1
Anode
2
TO-247
Common Cathode
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MBR4060WTPbF
Bulletin PD-20814 rev. A 11/06
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V) 60 VRWM Max. Working Peak Reverse Voltage (V)
MBR4060WTPbF
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward (Per Device) Current (Per Leg) IFSM Max.Peak One Cycle Non-Repetitive Surge Current ( Per Leg) See fig.7 EAS IAR Non-Repetitive Avalanche Energy (Per Leg) Repetitive Avalanche Current (Per Leg)
Values Units
40 20 1020 265 13 1.5 mJ A A A
Conditions
@ TC = 108°C, 50% duty cycle, rectangular waveform 5μs Sine or 3μs Rect. pulse Following any rated load condition and with 10ms Sine or 6ms Rect. pulse rated VRRM applied TJ = 25 °C, IAS = 1.5 Amps, L = 11.5 mH Current decaying linearly to zero in 1 μsec Frequency limited by TJ max. VA = 1.5 x VR typical
Electrical Specifications
Parameters
VFM IRM Max. Forward Voltage Drop (1) Max. Instantaneus Reverse Current
Values
0.72 0.62 1.0 100 720 7.5 10000
Units
V V mA mA pF nH V/μs
Conditions
@ 20A TJ = 25 °C @ 20A TJ = 125 °C TJ = 25°C Rated DC voltage TJ = 125°C VR = 5VDC (test signal range 100Khz to 1Mhz) 25°C Measured from top of terminal to mounting plane
CT Max. Junction Capacitance LS Typical Series Inductance dv/dt Max. Voltage Rate of Change (Rated VR)
(1) Pulse Width < 300μs, Duty Cycle <2%
Thermal-Mechanical Specifications
Parameters
TJ Tstg Max. Junction Temperature Range Max. Storage Temperature Range
Values
-55 to 150 -55 to 150 2.20 1.10 6 (0.21) Min. Max. 6 (5) 12 (10)
Units
°C °C
Conditions
RthJC Max. Thermal Resistance Junction to Case (Per Package) RthCS Typical Thermal Resistance Case to Heatsink wt T Approximate Weight Mounting Torque Case Style Device Marking
°C/W DC operation °C/W Mounting surface, smooth and greased g (oz.) Kg-cm (Ibf-in)
TO-247AC (TO-3P) JEDEC MBR4060WT
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MBR4060WTPbF
Bulletin PD-20814 rev. A 11/06
1000
1000 100
Reverse Current - IR (mA)
T = 150˚C J 125˚C
10
100˚C
1 0.1 0.01
75˚C 50˚C 25˚C
100
Instantaneous Forward Current - IF (A)
0.001 0
Tj = 150˚C Tj = 125˚C Tj = 25˚C
10
20
30
40
50
60
Reverse Voltage - VR (V) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage
1000
Junction Capacitance - CT (pF)
10
T = 25˚C J
1 0 0.5 1 1.5 2 2.5
Forward Voltage Drop - VFM (V) Fig. 1 - Max. Forward Voltage Drop Characteristics
100 0 10 20 30 40 50 60
Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
10
Thermal Impedance ZthJC (°C/W)
1
0.1
D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08
PM D
t 1 t 2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak Tj = Pdm x ZthJC + Tc
0.01
Single Pulse (Thermal Resistance)
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance ZthJC Characteristics
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3
MBR4060WTPbF
Bulletin PD-20814 rev. A 11/06
160
Allowable Case Temperature (°C) Average Power Loss (Watts)
20
150 140 130 120 110 100 80% Rated Vr applied 90 see note (2) 80 0 5 10 15 20 25 30
Average Forward Current - IF(AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current
Non-Repetitive Surge Current - I FSM (A)
Square wave (D = 0.50)
15
D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75
DC
10
RMS Limit
DC
5
0 0 5 10 15 20 25 30
Average Forward Current - IF(AV) (A) Fig. 6 - Forward Power Loss Characteristics
1000
At Any Rated Load Condition And With Rated Vrrm Applied Following Surge
100 10
100
1000
10000
Square Wave Pulse Duration - tp (microsec) Fig. 7 - Max. Non-Repetitive Surge Current
L HIGH-S PEED S CH WIT FREE-WHEEL DIODE 40HF L40S 02
+
DUT
IR P460 F R = 25 ohm g
Vd = 25 Volt
CURR ENT MONIT OR
Fig. 8 - Unclamped Inductive Test Circuit
(2) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR
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MBR4060WTPbF
Bulletin PD-20814 rev. A 11/06
Outline Table
Conform to JEDEC outline TO-247AC (TO-3P) Dimensions in millimeters and (inches)
Marking Information
EXAMPLE: THIS IS A MBR4060WT WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2002 IN ASSEMBLY LINE "H"
INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE
PART NUMBER
MBR4060WT
P235H
56
57
DATE CODE P = LEAD-FREE YEAR 2 = 2002 WEEK 35 LINE H
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MBR4060WTPbF
Bulletin PD-20814 rev. A 11/06
Ordering Information Table
Device Code
MBR
1
40
2
60
3
WT
4
PbF
5
1 2 3 4
-
Schottky MBR Series Currrent Rating (40 = 40A) Voltage Rating (60 = 60V) Circuit Configuration : Center Tap (Dual) TO-247 none = Standard Production PbF = Lead-Free
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Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 11/06
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