SWITCHMODE Power Rectifier

www.DataSheet4U.com MBR30H100CT SWITCHMODE™ Power Rectifier 100 V, 30 A Features and Benefits • • • • • • Low Forward Voltage: 0.67 V @ 125°C Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 30 A Total (15 A Per Diode Leg) Pb−Free Package is Available http://onsemi.com SCHOTTKY BARRIER RECTIFIER 30 AMPERES 100 VOLTS 1 2, 4 3 4 Applications • Power Supply − Output Rectification • Power Management • Instrumentation Mechanical Characteristics: • • • • MARKING DIAGRAM Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds • ESD Rating: Human Body Model = 3B Machine Model = C MAXIMUM RATINGS Please See the Table on the Following Page TO−220AB CASE 221A PLASTIC 1 2 AYWW B30H100G AKA 3 A Y WW B30H100 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Polarity Designator ORDERING INFORMATION Device MBR30H100CT MBR30H100CTG Package TO−220 TO−220 (Pb−Free) Shipping 50 Units/Rail 50 Units/Rail © Semiconductor Components Industries, LLC, 2006 1 July, 2006 − Rev. 2 Publication Order Number: MBR30H100CT/D MBR30H100CT MAXIMUM RATINGS (Per Diode Leg) Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TC = 156°C) Per Diode Per Device Peak Repetitive Forward Current (Square Wave, 20 kHz, TC = 151°C) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature (Note 1) Storage Temperature Voltage Rate of Change (Rated VR) Controlled Avalanche Energy (see test conditions in Figures 11 and 12) ESD Ratings: Machine Model = C Human Body Model = 3B Symbol VRRM VRWM VR IF(AV) 15 30 IFM IFSM TJ Tstg dv/dt WAVAL 30 250 +175 *65 to +175 10,000 200 > 400 > 8000 A A °C °C V/ms mJ V Value 100 Unit V A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Maximum Thermal Resistance − Junction−to−Case (Min. Pad) − Junction−to−Ambient (Min. Pad) Symbol RqJC RqJA Value 2.0 60 Unit °C/W ELECTRICAL CHARACTERISTICS (Per Diode Leg) Characteristic Maximum Instantaneous Forward Voltage (Note 2) (iF = 15 A, TJ = 25°C) (iF = 15 A, TJ = 125°C) (iF = 30 A, TJ = 25°C) (iF = 30 A, TJ = 125°C) Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TJ = 125°C) (Rated DC Voltage, TJ = 25°C) 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. Symbol vF − − − − iR − − 1.1 0.0008 6.0 0.0045 0.76 0.64 0.88 0.76 0.80 0.67 0.93 0.80 mA Min Typ Max Unit V http://onsemi.com 2 MBR30H100CT i , INSTANTANEOUS FORWARD CURRENT (AMPS F 100 i , INSTANTANEOUS FORWARD CURRENT (AMPS F 100 10 175°C 10 175°C TJ = 150°C 1.0 125°C 1.0 TJ = 150°C 125°C 0.1 0.0 25°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0.1 0.0 25°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1E−01 IR, REVERSE CURRENT (AMPS) 1E−02 1E−03 1E−04 1E−05 1E−06 1E−07 1E−08 0 TJ = 25°C TJ = 125°C TJ = 150°C IR, MAXIMUM REVERSE CURRENT (AMPS) 1E−01 1E−02 1E−03 TJ = 150°C TJ = 125°C 1E−04 1E−05 TJ = 25°C 1E−06 1E−07 1E−08 0 20 40 60 80 100 20 40 60 80 100 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current dc , AVERAGE FORWARD CURRENT (AMPS) 26 24 22 20 18 16 14 12 10 8.0 6.0 4.0 2.0 0 130 SQUARE WAVE 135 140 145 150 155 160 165 170 175 180 26 24 22 20 18 16 14 12 10 8.0 6.0 4.0 2.0 0 , AVERAGE FORWARD CURRENT (AMPS) RATED VOLTAGE APPLIED RqJA = 16° C/W RqJA = 60° C/W (NO HEATSINK) dc SQUARE WAVE dc F (AV) I F (AV) I 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (C°) TA, AMBIENT TEMPERATURE (°C) Figure 5. Current Derating, Case Per Leg Figure 6. Current Derating, Ambient Per Leg http://onsemi.com 3 MBR30H100CT P , AVERAGE FORWARD POWER DISSIPATION (WATTS F (AV) 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 10000 TJ = 175°C TJ = 25°C SQUARE WAVE C, CAPACITANCE (pF) 1000 dc 100 10 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 20 40 60 80 100 IF(AV), AVERAGE FORWARD CURRENT (AMPS) VR, REVERSE VOLTAGE (VOLTS) Figure 7. Forward Power Dissipation Figure 8. Capacitance R(t), TRANSIENT THERMAL RESISTANCE 100 D = 0.5 10 0.2 0.1 0.05 0.01 P(pk) t1 t2 SINGLE PULSE DUTY CYCLE, D = t1/t2 0.001 0.01 t1, TIME (sec) 0.1 1 10 100 1000 1 0.1 0.01 0.000001 0.00001 0.0001 Figure 9. Thermal Response Junction−to−Ambient R(t), TRANSIENT THERMAL RESISTANCE 10 1 D = 0.5 0.2 0.1 0.05 0.1 0.01 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 t1, TIME (sec) 0.1 1 10 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 1000 Figure 10. Thermal Response Junction−to−Case http://onsemi.com 4 MBR30H100CT +VDD IL 10 mH COIL VD MERCURY SWITCH ID ID VDD t0 t1 t2 t BVDUT DUT S1 IL Figure 11. Test Circuit Figure 12. Current−Voltage Waveforms The unclamped inductive switching circuit shown in Figure 11 was used to demonstrate the controlled avalanche capability of this device. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite component resistances. Assuming the component resistive elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). EQUATION (1): BV 2 DUT W [ 1 LI LPK AVAL 2 BV –V DUT DD EQUATION (2): 2 W [ 1 LI LPK AVAL 2 http://onsemi.com 5 MBR30H100CT PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AD −T− B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 ANODE CATHODE ANODE CATHODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 Q 1 2 3 A U K H Z L V G D N R J STYLE 6: PIN 1. 2. 3. 4. SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negli