SWITCHMODE Power Rectifier

www.DataSheet4U.com MBR20H100CT, MBRB20H100CT, MBRF20H100CT SWITCHMODE™ Power Rectifier 100 V, 20 A Features and Benefits http://onsemi.com • • • • • • • Low Forward Voltage: 0.64 V @ 125°C Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 20 A Total (10 A Per Diode Leg) Guard−Ring for Stress Protection Pb−Free Packages are Available SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 100 VOLTS 1 2, 4 3 4 Applications MARKING DIAGRAMS • Power Supply − Output Rectification • Power Management • Instrumentation Mechanical Characteristics: TO−220AB CASE 221A STYLE 6 1 2 • Case: Epoxy, Molded • Epoxy Meets UL 94 V−0 @ 0.125 in • Weight (Approximately): AYWW B20H100G AKA 3 1.9 Grams (TO−220) 1.7 Grams (D2PAK) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 1 2 AYWW B20H100G AKA ISOLATED TO−220 CASE 221D STYLE 3 3 AY WW B20H100G AKA MAXIMUM RATINGS Please See the Table on the Following Page 4 1 2 3 D2PAK CASE 418B STYLE 3 A Y WW B20H100 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Device = Polarity Designator ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 4 1 Publication Order Number: MBR20H100CT/D MBR20H100CT, MBRB20H100CT, MBRF20H100CT MAXIMUM RATINGS (Per Diode Leg) Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC = 162°C Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 160°C Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature (Note 1) Storage Temperature Voltage Rate of Change (Rated VR) Controlled Avalanche Energy (see test conditions in Figures 11 and 12) ESD Ratings: Machine Model = C Human Body Model = 3B Symbol VRRM VRWM VR IF(AV) IFRM IFSM TJ Tstg dv/dt WAVAL Value 100 Unit V 10 20 250 +175 *65 to +175 10,000 200 > 400 > 8000 A A A °C °C V/ms mJ V THERMAL CHARACTERISTICS Maximum Thermal Resistance (MBR20H100CT and MBRB20H100CT) (MBRF20H100CT) − Junction−to−Case − Junction−to−Ambient − Junction−to−Case RqJC RqJA RqJC 2.0 60 2.5 °C/W ELECTRICAL CHARACTERISTICS (Per Diode Leg) Maximum Instantaneous Forward Voltage (Note 2) (IF = 10 A, TC = 25°C) (IF = 10 A, TC = 125°C) (IF = 20 A, TC = 25°C) (IF = 20 A, TC = 125°C) Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 125°C) (Rated DC Voltage, TC = 25°C) vF V 0.77 0.64 0.88 0.73 mA 6.0 0.0045 iR Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. DEVICE ORDERING INFORMATION Device Order Number MBR20H100CT MBR20H100CTG MBRF20H100CTG MBRB20H100CTT4G Package Type TO−220 TO−220 (Pb−Free) TO−220FP (Pb−Free) D2PAK (Pb−Free) Shipping † 50 Units / Rail 50 Units / Rail 50 Units / Rail 800 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. http://onsemi.com 2 MBR20H100CT, MBRB20H100CT, MBRF20H100CT IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 100 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 100 TJ = 150°C 10 TJ = 125°C TJ = 25°C TJ = 150°C 10 TJ = 125°C 1 1 TJ = 25°C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.0E−01 IR, REVERSE CURRENT (AMPS) 1.0E−02 1.0E−03 TJ = 125°C TJ = 150°C IR, MAXIMUM REVERSE CURRENT (AMPS) 1.0E−01 TJ = 150°C TJ = 125°C 1.0E−02 1.0E−03 1.0E−04 1.0E−05 1.0E−06 1.0E−04 1.0E−05 1.0E−06 TJ = 25°C TJ = 25°C 1.0E−07 20 40 60 80 1.0E−07 1.0E−08 0 20 40 60 80 100 1.0E−08 0 100 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current IF, AVERAGE FORWARD CURRENT (AMPS) PFO, AVERAGE POWER DISSIPATION (WATTS) 20 dc 15 SQUARE WAVE 10 16 14 12 10 8 6 4 2 0 0 5 10 15 20 25 SQUARE DC 5 0 100 110 120 130 140 150 160 170 180 TC, CASE TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating http://onsemi.com 3 Figure 6. Forward Power Dissipation MBR20H100CT, MBRB20H100CT, MBRF20H100CT 10000 TJ = 25°C C, CAPACITANCE (pF) 1000 100 10 0 20 40 60 80 100 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance R(t), TRANSIENT THERMAL RESISTANCE 100 D = 0.5 10 0.2 0.1 1 0.05 0.01 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 t1, TIME (sec) 0.1 1 10 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 100 1000 Figure 8. Thermal Response Junction−to−Ambient for MBR20H100CT and MBRB20H100CT R(t), TRANSIENT THERMAL RESISTANCE 10 1 D = 0.5 0.2 0.1 0.05 P(pk) t1 t2 0.1 0.01 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 t1, TIME (sec) 0.1 1 10 DUTY CYCLE, D = t1/t2 100 1000 Figure 9. Thermal Response Junction−to−Case for MBR20H100CT and MBRB20H100CT http://onsemi.com 4 MBR20H100CT, MBRB20H100CT, MBRF20H100CT R(t), TRANSIENT THERMAL RESISTANCE 10 D = 0.5 1 0.2 0.1 0.05 0.01 P(pk) t1 SINGLE PULSE 0.001 0.000001 t2 0.1 0.01 DUTY CYCLE, D = t1/t2 0.00001 0.0001 0.001 0.01 t1, TIME (sec) 0.1 1 10 100 1000 Figure 10. Thermal Response Junction−to−Case for MBRF20H100CT +VDD IL 10 mH COIL VD MERCURY SWITCH ID IL ID VDD t0 t1 t2 t BVDUT S1 DUT Figure 11. Test Circuit Figure 12. Current−Voltage Waveforms The unclamped inductive switching circuit shown in Figure 11 was used to demonstrate the controlled avalanche capability of this device. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite component resistances. Assuming the component resistive elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). EQUATION (1): BV 2 DUT W [ 1 LI LPK AVAL 2 BV –V DUT DD EQUATION (2): 2 W [ 1 LI LPK AVAL 2 http://onsemi.com 5 MBR20H100CT, MBRB20H100CT, MBRF20H100CT PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE J C E −B− 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. DIM A B C D E F G H J K L M N P R S V INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 V W 1 2 3 S A −T− SEATING PLANE K G D 3 PL 0.13 (0.005) H M J W TB M VARIABLE CONFIGURATION ZONE L M R N U L P L M STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE M F VIEW W−W 1 F VIEW W−W 2 F VIEW W−W 3 SOLDERING FOOTPRINT* 8.38 0.33 10.66 0.42 1.016 0.04 5.08 0.20 17.02 0.67 3.05 0.12 mm inches SCALE 3:1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 MBR20H100CT, MBRB20H100CT, MBRF20H100CT PACKAGE DIMENSIONS TO−220 PLASTIC CASE 221A−09 ISSUE AB −T− B 4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.020 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 ANODE CATHODE ANODE CATHODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 0.508 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 F T C S Q 123 A U K H Z L V G D N R J STYLE 6: PIN 1. 2