Surface Mount Schottky Power Rectifier

Part  Number MBR120VLSFT1
Manufacturer ON Semiconductor
Semiconductor DataSheet

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www.DataSheet4U.com MBR120VLSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC−DC and DC−DC converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical. Features http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 20 VOLTS • • • • • • Guardring for Stress Protection Optimized for Very Low Forward Voltage 125°C Operating Junction Temperature Epoxy Meets UL 94 V−0 @ 0.125 in Package Designed for Optimal Automated Board Assembly ESD Ratings: Machine Model, C; Human Body Model, 3B • Pb−Free Packages are Available Mechanical Characteristics SOD−123FL CASE 498 PLASTIC MARKING DIAGRAM • Reel Options: MBR120VLSFT1 = 3,000 per 7″ reel/8 mm tape MBR120VLSFT3 = 10,000 per 13″ reel/8 mm tape Device Marking: L2V Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy, Molded Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds • Device Meets MSL 1 Requirements L2VMG G • • • • • L2V = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MBR120VLSFT1 MBR120VLSFT1G MBR120VLSFT3 MBR120VLSFT3G Package SOD−123FL SOD−123FL (Pb−Free) Shipping † 3000/Tape & Reel 3000/Tape & Reel SOD−123FL 10000/Tape & Reel SOD−123FL 10000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 1 July, 2005 − Rev. 2 Publication Order Number: MBR120VLSFT1/D MBR120VLSFT1 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TL = 119°C Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) Storage Temperature Range Operating Junction Temperature Voltage Rate of Change (Rated VR) Symbol VRRM VRWM VR IF(AV) IFSM Tstg TJ dv/dt Value 20 Unit V 1.0 45 −65 to +125 −65 to +125 1000 A A °C °C V/ms Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance − Junction−to−Lead (Note 1) Thermal Resistance − Junction−to−Lead (Note 2) Thermal Resistance − Junction−to−Ambient (Note 1) Thermal Resistance − Junction−to−Ambient (Note 2) 1. Mounted with minimum recommended pad size, PC Board FR4. 2. Mounted with 1 in. copper pad (Cu area 700 mm2). Symbol Rtjl Rtjl Rtja Rtja Value 26 21 325 82 Unit °C/W ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 3) (IF = 0.1 A) (IF = 0.5 A) (IF = 1.0 A) Maximum Instantaneous Reverse Current (Note 3) (Rated DC Voltage) 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%. Symbol VF 0.275 0.315 0.340 IR 0.60 15 0.205 0.270 0.300 mA TJ = 255C TJ = 855C Unit V http://onsemi.com 2 MBR120VLSFT1 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 TJ = 125°C 10 TJ = 85°C 1 TJ = 25°C TJ = 125°C 1 TJ = 85°C TJ = −55°C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) TJ = 25°C 0.1 0.1 0.2 0.3 0.4 0.5 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage IR, MAXIMUM REVERSE CURRENT (AMPS) Figure 2. Maximum Forward Voltage 100E−3 IR, REVERSE CURRENT (AMPS) TJ = 125°C 10E−3 TJ = 85°C 1E−3 100E−3 TJ = 125°C 10E−3 TJ = 85°C 1E−3 100E−6 TJ = 25°C 100E−6 TJ = 25°C 10E−6 0 5 10 15 20 VR, REVERSE VOLTAGE (VOLTS) 10E−6 0 5 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current PFO, AVERAGE POWER DISSIPATION (WATTS) IO, AVERAGE FORWARD CURRENT (AMPS) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 25 45 65 85 Ipk/Io = 10 Ipk/Io = 20 dc freq = 20 kHz 0.5 dc 0.4 Ipk/Io = 5 Ipk/Io = 10 0.2 Ipk/Io = 20 SQUARE WAVE Ipk/Io = p SQUARE WAVE Ipk/Io = p Ipk/Io = 5 0.3 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IO, AVERAGE FORWARD CURRENT (AMPS) 105 125 TL, LEAD TEMPERATURE (°C) Figure 5. Current Derating Figure 6. Forward Power Dissipation http://onsemi.com 3 MBR120VLSFT1 500 TJ = 25°C TJ, DERATED OPERATING TEMPERATURE (°C) C, CAPACITANCE (pF) 400 125 120 115 110 105 100 95 90 85 80 75 70 65 0 324.9°C/W 400°C/W 2.0 4.0 6.0 8.0 10 12 14 16 18 20 130°C/W RqJA = 25.6°C/W 300 200 235°C/W 100 0 0 2 4 6 8 10 12 14 16 18 20 VR, REVERSE VOLTAGE (VOLTS) VR, DC REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating* * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ may be calculated from the equation: TJ = TJmax − r(t)(Pf + Pr) where r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. r(t), TRANSIENT THERMAL RESISTANCE 1000 D = 0.5 100 0.2 0.1 0.05 P(pk) 0.01 1 SINGLE PULSE Test Type > Min Pad < Die Size 38x38 @ 75% mils 0.1 0.000001 0.00001 0.0001 0.001 0.01 t1, TIME (sec) 0.1 1 10 100 1000 t1 t2 10 DUTY CYCLE, D = t1/t2 qJA = 321.8 °C/W Figure 9. Thermal Response http://onsemi.com 4 MBR120VLSFT1 PACKAGE DIMENSIONS SOD−123LF CASE 498−01 ISSUE A E q D A1 A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH. 4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP. DIM A A1 b c D E L HE q MIN 0.90 0.00 0.70 0.10 1.50 2.50 0.55 3.40 0° MILLIMETERS NOM MAX 0.95 1.00 0.05 0.10 0.90 1.10 0.15 0.20 1.65 1.80 2.70 2.90 0.75 0.95 3.60 3.80 8° − MIN 0.035 0.000 0.028 0.004 0.059 0.098 0.022 0.134 0° INCHES NOM 0.037 0.002 0.035 0.006 0.065 0.106 0.030 0.142 − MAX 0.039 0.004 0.043 0.008 0.071 0.114 0.037 0.150 8° POLARITY INDICATOR OPTIONAL AS NEEDED L b HE q c SOLDERING FOOTPRINT* 0.91 0.036 2.36 0.093 4.19 0.165 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ 1.22 0.048 mm inches MBR120VLSFT1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312



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