FLASH MEMORY CMOS 64 M (4M X 16) BIT MirrorFlashTM

www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20903-1E FLASH MEMORY CMOS 64 M (4M × 16) BIT MirrorFlashTM MBM29PL65LM-90/10 s DESCRIPTION MBM29PL65LM is of 67,108,864 bit capacity +3.0 V -only Flash memory enabling word write, both across- the chip, comprehensive erase and by-the-unit, individual sector erase. Its CMOS peripheral circuitry contributes to significant saving in power consumption even at high-speed standby mode operation. MBM29PL65LM consists of 4M x 16 bit Word mode and erases 128 sectors at ever 32K word. Its package type is 48-pin TSOP . Embedded Program AlgorithmTM, when executed with erase or program command sequences, automatically times the program pulse widths and verifies proper cell margin. MBM29PL65LM, because of its capability in electrical data erase and program through write command, enables to rewrite data within the internal system. It is a truly dependable device for vast application possibilities. s PRODUCT LINE UP Part No. VCC VCCQ Max Address Access Time Max CE Access Time Max Page Read Access Time MBM29PL65LM-90 3.0 V to 3.6 V VCC 90 ns 90 ns 25 ns MBM29PL65LM-10 3.0 V to 3.6 V VCC 100 ns 100 ns 30 ns s PACKAGE 48-pin plastic TSOP (1) Marking Side (FPT-48P-M19) Notes: Programming in byte mode ( × 8) is prohibited. Programming to the address that already contains data is prohibited. (It is mandatory to erase data prior to overprogram on the same address. MBM29PL65LM-90/10 s FEATURES • • • • • • • • MirrorFlash MemoryTM*1 0.23 µm Process Technology 4 M × 16 bit configuration Single 3.0 V read, program and erase Standard 48-pin TSOP (1) (Package suffix : TN) Minimum 100,000 program/erase cycles High performance Page mode (4 words) Sector erase architecture (Sectors can be grouped in any given combination.) 32K word sectors Any combination of sectors can be concurrently erased. Also supports full chip erase. HiddenROM Region Write Protect by WP pin Embedded EraseTM*2 Algorithms Embedded ProgramTM*2 Algorithms Data Polling and Toggle Bit feature for detection of program or erase cycle completion Automatic sleep mode Erase Suspend/Resume Low VCC write inhibit Sector Group Protection Extended Sector Group Protection Fast Program Temporary sector group unprotection In accordance with CFI (Common Flash Memory Interface) • • • • • • • • • • • • • *1 : MirrorFlashTM is a trademark of Fujitsu Limited. *2 : Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc. 2 MBM29PL65LM-90/10 s PIN ASSIGNMENT TSOP(1) A15 A14 A13 A12 A11 A10 A9 A8 A21 A20 WE RESET ACC WP A19 A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 (Marking Side) 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 VCCQ VSS DQ15 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE VSS CE A0 ( FPT-48P-M19 ) s PIN DESCRIPTIONS Pin Name A21 to A0 DQ15 to DQ0 CE OE WE WP ACC RESET VCC VCCQ VSS Address Inputs Data Inputs/Outputs Chip Enable Output Enable Write Enable Hardware Write Protection Hardware Program Acceleration Hardware Reset Pin/Temporary Sector Group Unprotection Device Power Supply Output Power Supply Device Ground Function 3 MBM29PL65LM-90/10 s BLOCK DIAGRAM DQ15 to DQ0 VCC VSS VCCQ Erase Voltage Generator Input/Output Buffers WE RESET WP ACC State Control Command Register Program Voltage Generator CE OE Chip Enable Output Enable Logic STB Data Latch STB Y-Decoder Y-Gating Timer for Program/Erase A21 to A2 Address Latch X-Decoder Cell Matrix A1, A0 s LOGIC SYMBOL 22 A21 to A0 DQ 15 to DQ 0 CE OE WE WP ACC RESET 16 4 MBM29PL65LM-90/10 s DEVICE BUS OPERATION MBM29PL65LM User Bus Operations Table Operation Standby Autoselect Manufacture Code* Autoselect Device Code*1 Read Output Disable Write (Program/Erase) Enable Sector Group Protection*2 Temporary Sector Group Unprotection Reset (Hardware) Sector Write Protection* 3 1 CE OE WE A0 H L L L L L L X X X X L L L H H H X X X X H H H H L L X X X X L H A0 X A0 L X X X A1 X L L A1 X A1 H X X X A2 X L L A2 X A2 L X X X A3 X L L A3 X A3 L X X X A6 X L L A6 X A6 L X X X A9 DQ15 to DQ0 RESET WP X VID VID A9 X A9 X X X X Hi-Z Code Code DOUT Hi-Z *4 *4 *4 Hi-Z X H H H H H H VID VID L H X X X X X *5 H H X L Legend : L = VIL, H = VIH, X = VIL or VIH. See DC Characteristics for voltage levels. Hi-Z = High-Z, VID = 11.5 V to 12.5 V *1 : Manufacturer and device codes may also be accessed via a command register write sequence. See “MBM29PL65LM Standard Command Definitions”. *2 : Refer to Sector Group Protection. *3 : Protects the first 32K words sector (SA0). *4 : DIN or DOUT as required by command sequence, data pulling, or sector protect algorithm *5 : If WP/ACC = VIL, the first sector remains protected. If WP/ACC = VIH, the first sector will be protected or unprotected as determined by the method specified in “Sector Group Protection” in “s FUNCTIONAL DESCRIPTION”. 5 MBM29PL65LM-90/10 MBM29PL65LM Standard Command Definitions Table*1 Command Sequence Reset* Reset* 2 2 Bus Write Cycles Req'd First Bus Second Bus Third Bus Write Write Write Cycle Cycle Cycle Addr Data Addr XXXh 555h 555h 555h 555h 555h F0h — Data — 55h 55h 55h 55h 55h — — 55h PD Addr Data — 555h 555h 555h 555h 555h — — 555h — — SA — 555h SGA — 555h 555h 555h — F0h 90h A0h 80h 80h — — 20h — — 25h — F0h 40h — 88h A0h 90h Fourth Bus Read/Write Cycle Addr — RA* 13 Fifth Bus Sixth Bus Write Write Cycle Cycle Addr Data Addr Data — — — — — — — — — — — — — Data — RD* 13 1 3 3 4 6 6 3 AAh 2AAh AAh 2AAh AAh 2AAh AAh 2AAh AAh 2AAh — — — — — Autoselect Program Chip Erase Sector Erase Program/Erase Suspend* Program/Erase Resume* Set to Fast Mode* Fast Program* Write to Buffer Program Buffer to Flash (Confirm) Write to Buffer Abort Reset*6 Extended Sector Group Protection*7,*8 Query*9 HiddenROM Entry* HiddenROM Exit*11 RA PA 10 10, 11 4 4 3 00h*13 PA 555h 555h — — — — — SA — — SGA*13 — — PA XXXh 04h*13 PD AAh AAh — — — — — 0Fh — — SD*13 — — PD 00h 2AAh 55h 555h 10h 2AAh 55h — — — — — PA — — — — — — — — — — — — PD — — — — — — — SA — — — — — WBL — — — — — — — 30h — — — — — PD — — — — — — — 1 1 3 2 2 20 1 3 4 1 3 4 4 XXXh B0h XXXh 555h 30h AAh 2AAh PA XXXh A0h XXXh 555h SA 555h XXXh 55h 555h 555h 555h Reset from Fast Mode*5 90h XXXh 00h*12 AAh 2AAh 29h — 55h — 55h 60h — 55h 55h 55h AAh 2AAh 60h 98h SGA — AAh 2AAh AAh 2AAh AAh 2AAh HiddenROM Program * * = Address of the memory location to be read. = Address of the memory location to be programmed Addresses are latched on the falling edge of the write pulse. SA = Address of the sector to be erased. The combination of A21, A20, A19, A18, A17, A16 and A15 will uniquely select any sector. See “Sector Address Table” SGA = Sector Group Address to be protected. See “Sector Group Address Table”. Specify SGA which constitutes from A21 to A17 and (A6, A3, A2, A1, A0) = (0, 0, 0, 1, 0). RD = Data read from location RA during read operation. PD = Data to be programmed at location PA. Data is latched on the rising edge of write pulse. WBL = Write Buffer Location HRA = Address of the HiddenROM area ; 000000h to 00007Fh *1 : The command combinations not described in “MBM29PL65LM Standard Command Definitions” are illegal. *2 : Both of these reset commands are equivalent except for "Write to Buffer Abort" reset. *3 : The Erase Suspend and Erase Resume command are valid only during a sector erase operation. *4 : The Set to Fast Mode command is required prior to the Fast Program command. *5 : The Reset from Fast Mode command is required to return to the read mode when the device is in fast mode. 6 MBM29PL65LM-90/10 *6 : Reset to the read mode. The Write to Buffer Abort Reset command is required after the Write to Buffer operation was aborted. *7 : This command is valid while RESET = VID. *8 : Sector Group Address (SGA) with A6 = 0, A3 = 0, A2 = 0, A1 = 1, and A0 = 0 *9 : The valid address are A6 to A0. *10 : The HiddenROM Entry command is required prior to the HiddenROM programming. *11 : This command is valid during HiddenROM mode. *12 : The data “F0h” is also acceptable. *13 : Indicates read cycle. Notes : • X = “H” or “L” • Bus operations are defined in “User Bus Operations Table”. Autoselect Codes Table Type Manufacturer’s Code Device Code Extended Device Code*1 X Sector Group Protection*3 Sector Group Address VIL VIL VIH VIL VIH VIL VIH VIH VIH VIL 2201h *2 A21 to A17 X X X A6 VIL VIL VIL A3 VIL VIL VIH A2 VIL VIL VIH A1 VIL VIL VIH A0 VIL VIH VIL Code (HEX) 04h 227Eh 2213h *1 : At Word mode, a read cycle at address 01h outputs device code. When 227Eh is output, it indicates that reading two additional codes, called Extended Device Codes, will be required. Therefore the system may continue reading out these Extended Device Codes at the address of 0Eh, as well as at 0Fh. *2 : Outputs 01h at protected sector group addresses and outputs 00h at unprotected sector group addresses. *3 : Given CE = Fix, wait for one cycle after the rising edge of WE (the last write command), then indicate SGA as (A6, A3, A2, A1, A0) = (0, 0, 0, 1, 0). 7 MBM29PL65LM-90/10 Sector Address Table Sector SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 SA19 SA20 SA21 SA22 SA23 SA24 SA25 SA26 SA27 SA28 SA29 SA30 A21 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 A20 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 A19 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 A18 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 A17 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 A16 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1