SENSITIVE GATE TRACS

www.DataSheet4U.com MAC997 Series Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO–92 package which is readily adaptable for use in automatic insertion equipment. • One–Piece, Injection–Molded Package • Blocking Voltage to 600 Volts • Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all possible Combinations of Trigger Sources, and especially for Circuits that Source Gate Drives • All Diffused and Glassivated Junctions for Maximum Uniformity of Parameters and Reliability • Improved Noise Immunity (dv/dt Minimum of 20 V/µsec at 110°C) • Commutating di/dt of 1.6 Amps/msec at 110°C • High Surge Current of 8 Amps • Device Marking: Device Type, e.g., for MAC997A6: MAC7A6, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off-State Voltage (TJ = –40 to +110°C)(1) Sine Wave 50 to 60 Hz, Gate Open MAC997A6,B6 MAC997A8,B8 On-State RMS Current Full Cycle Sine Wave 50 to 60 Hz (TC = +50°C) Peak Non–Repetitive Surge Current One Full Cycle, Sine Wave 60 Hz (TC = 110°C) Circuit Fusing Considerations (t = 8.3 ms) Peak Gate Voltage (t 2.0 m s, TC = +80°C) Symbol VDRM, VRRM 400 600 IT(RMS) 0.8 Amp Value Unit Volts 1 2 3 http://onsemi.com TRIACS 0.8 AMPERE RMS 400 thru 600 VOLTS MT2 G MT1 TO–92 (TO–226AA) CASE 029 STYLE 12 PIN ASSIGNMENT ITSM 8.0 Amps 1 2 I2t VGM PGM PG(AV) IGM TJ Tstg .26 5.0 5.0 0.1 1.0 –40 to +110 –40 to +150 A2s Volts 3 Main Terminal 1 Gate Main Terminal 2 v v ORDERING INFORMATION Watts Watt Preferred devices are recommended choices for future use and best overall value. See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. Peak Gate Power (t 2.0 m s, TC = +80°C) Average Gate Power (TC = 80°C, t 8.3 ms) v Peak Gate Current (t 2.0 m s, TC = +80°C) v Amp °C °C Operating Junction Temperature Range Storage Temperature Range (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. © Semiconductor Components Industries, LLC, 2000 1 May, 2000 – Rev. 2 Publication Order Number: MAC997/D MAC997 Series THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes for 10 Seconds Symbol RθJC RθJA TL Max 75 200 260 Unit °C/W °C/W °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) IDRM, IRRM TJ = 25°C TJ = +110°C — — — — 10 100 µA µA ON CHARACTERISTICS Peak On–State Voltage (ITM = .85 A Peak; Pulse Width " v 2.0 ms, Duty Cycle v 2.0%) VTM IGT — — 1.9 Volts mA Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MAC997A6,A8 MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) MT2(–), G(+) MAC997B6,B8 — — — — — — — — IL — — — — VGT — — — — VGD 0.1 — — — — — — — — 5.0 5.0 5.0 7.0 3.0 3.0 3.0 5.0 mA Latching Current (VD = 12 V, IG = 10 mA) MT2(+), G(+) All Types MT2(+), G(–) All Types MT2(–), G(–) All Types MT2(–), G(+) All Types Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) All Types MT2(+), G(–) All Types MT2(–), G(–) All Types MT2(–), G(+) All Types Gate Non–Trigger Voltage (VD = 12 V, RL = 100 Ohms, TJ = 110°C) All Four Quadrants Holding Current (VD = 12 Vdc, Initiating Current = 200 mA, Gate Open) Turn-On Time (VD = Rated VDRM, ITM = 1.0 A pk, IG = 25 mA) 1.6 10.5 1.5 2.5 15 20 15 15 Volts .66 .77 .84 .88 — 2.0 2.0 2.0 2.5 — Volts IH tgt — — 1.5 2.0 10 — mA µs DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current (VD = 400 V, ITM = .84 A, Commutating dv/dt = 1.5 V/µs, Gate Open, TJ = 110°C, f = 250 Hz, with Snubber) Critical Rate of Rise of Off–State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 110°C) Repetitive Critical Rate of Rise of On–State Current Pulse Width = 20 µs, IPKmax = 15 A, diG/dt = 1 A/µs, f = 60 Hz di/dt(c) 1.6 — — A/ms dv/dt di/dt 20 — 60 — — 10 V/µs A/µs http://onsemi.com 2 MAC997 Series Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Quadrant 1 MainTerminal 2 + Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Holding Current IH Quadrant 3 VTM MainTerminal 2 – IRRM at VRRM on state VTM IH off state + Voltage IDRM at VDRM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 (+) MT2 Quadrant II (–) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant I IGT – (–) MT2 (–) MT2 + IGT Quadrant III (–) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant IV – MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in–phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 MAC997 Series TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (°C) 110 I T(RMS) , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE (°C) 110 100 90 DC 80 180° 70 60 50 40 30 0 α α = CONDUCTION ANGLE 0.1 0.2 0.3 α T = 30° 60° 90° 100 90 80 70 60 50 40 30 20 α α = CONDUCTION ANGLE 0 0.05 0.1 0.15 α DC 180° T = 30° 60° 90° 120° 120° 0.4 0.5 0.6 0.7 0.8 0.2 0.25 0.3 0.35 0.4 IT(RMS), RMS ON–STATE CURRENT (AMPS) IT(RMS), RMS ON–STATE CURRENT (AMPS) Figure 1. RMS Current Derating Figure 2. RMS Current Derating P(AV), MAXIMUM AVERAGE POWER DISSIPATION (WATTS) 1.2 1.0 α 0.8 α = CONDUCTION ANGLE 0.6 120° α DC 180° 6.0 4.0 TJ = 110°C 2.0 25°C 1.0 90° 0.2 0 ITM, INSTANTANEOUS ON-STATE CURRENT (AMP) 0.4 0.6 0.4 T = 30° 0 0.1 0.2 0.3 0.4 0.5 60° 0.6 0.7 0.8 IT(RMS), RMS ON–STATE CURRENT (AMPS) 0.2 Figure 3. Power Dissipation 0.1 0.06 0.04 0.02 0.01 0.006 0.4 1.2 2.0 2.8 3.6 4.4 5.2 6.0 VTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 4. On–State Characteristics http://onsemi.com 4 MAC997 Series R(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 I TSM , PEAK SURGE CURRENT (AMPS) 10 ZQ JC(t) = RQ JC(t) @ r(t) 0.1 5.0 3.0 2.0 TJ = 110°C f = 60 Hz CYCLE Surge is preceded and followed by rated current. 1.0 1.0 2.0 3.0 5.0 10 30 50 100 0.01 0.1 1.0 10 100 1S 103 1S 104 t, TIME (ms) NUMBER OF CYCLES Figure 5. Transient Thermal Response 100 I GT , GATE TRIGGER CURRENT (mA) VGT, GATE TRIGGER VOLTAGE (V) 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0 –40 –25 –10 5 20 35 50 65 80 95 110 Figure 6. Maximum Allowable Surge Current Q4 Q3 Q2 Q1 10 Q4 Q3 Q2 1 Q1 0.3 –40 –25 –10 5 20 35 50 65 80 95 110 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Typical Gate Trigger Current versus Junction Temperature 100 10 Figure 8. Typical Gate Trigger Voltage versus Junction Temperature IL , LATCHING CURRENT (mA) 10 Q2 IH , HOLDING CURRENT (mA) MT2 Negative 1 MT2 Positive Q4 1 Q1 Q3 0 –40 –25 –10 5 20 35 50 65 80 95 110 0.1 –40 –25 –10 5 20 35 50 65 80 95 110 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 9. Typical Latching Current versus Junction Temperature Figure 10. Typical Holding Current versus Junction Temperature http://onsemi.com 5 MAC997 Series LL 200 VRMS ADJUST FOR ITM, 60 Hz VAC TRIGGER CHARGE CONTROL TRIGGER CONTROL MEASURE I RS 1N4007 – CS MT2 1N914 51 W G MT1 ADJUST FOR + di/dt(c) CHARGE 200 V NON-POLAR CL Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information. Figure 11. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c http://onsemi.com 6 MAC997 Series TO–92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL H2A H2A H2B H2B H W2 H4 H5 L1 L F1 F2 P2 P1 P P2 D H1 W1 W T T2 T1 Figure 12. Device Positioning on Tape Specification Inches Symbol D D2 F1, F2 H H1 H2A H2B H4 H5 L L1 P P1 P2 T T1 T2 W W1 W2 Millimeter Max Min 3.8 0.38 2.4 1.5 8.5 0 0 18 15.5 8.5 2.5 12.5 5.95 3.55 0.15 — 0.35 17.5 5.5 .15 Item Tape Feedhole Diameter Component Lead Thickness Dimension Component Lead Pitch Bottom of Component to Seating Plane Feedhole Location Deflection Left or Right Deflection Front or Rear Feedhole to Bottom of Component Feedhole to Seating Plane Defective Unit Clipped Dimension Lead Wire Enclosure Feedhole Pitch Feedhole Center to Center Lead First Lead Spacing Dimension Adhesive Tape Thickness Overall Taped Package Thickness Carrier Strip Thickness Carrier Strip Width Adhesive Tape Width Adhesive Tape Position Min 0.1496 0.015 0.0945 .059 0.3346 0 0 0.7086 0.610 0.3346 0.09842 0.4921 0.2342 0.1397 0.06 — 0.014 0.6889 0.2165 .0059 Max 4.2 0.51 2.8 4.0 9.5 1.0 1.0 19.5 16.5 11 — 12.9 6.75 3.95 0.20 1.44 0.65 19 6.3 0.5 0.1653 0.020 0.110 .156 0.3741 0.039 0.051 0.768 0.649 0.433 — 0.5079 0.2658 0.1556 0.08 0.0567 0.027 0.7481 0.2841 0.01968 NOTES: 1. Maximum alignment deviation between leads not to be greater than 0.2 mm. 2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm. 3. Component lead to tape adhesion must meet the pull test requirements. 4. Maximum non–cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches. 5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive. 6. No more