(MAC97A6 / MAC97A8) Logic level triac

www.DataSheet4U.com MAC97A8; MAC97A6 Logic level triac Rev. 01 — 29 March 2001 M3D186 Product specification 1. Description Logic level sensitive gate triac intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. Product availability: MAC97A8 in SOT54 (TO-92) MAC97A6 in SOT54 (TO-92) available on request - contact your sales representative. 2. Features s s s s Blocking voltage to 600 V (MAC97A8) RMS on-state current to 0.6 A Sensitive gate in all four quadrants Low cost package. 3. Applications c c s General purpose bidirectional switching s Phase control applications s Solid state relays. 4. Pinning information Table 1: Pin 1 2 3 Pinning - SOT54 (TO-92), simplified outline and symbol Description main terminal 2 1 1 Simplified outline Symbol gate main terminal 1 2 3 2 3 MSB03 MBL305 SOT54 (TO-92) Philips Semiconductors MAC97A8; MAC97A6 Logic level triac 5. Quick reference data Table 2: VDRM Quick reference data Conditions Tj = 25 to 125 °C Tj = 25 to 125 °C full sine wave; Tlead ≤ 50 °C; Figure 5 Typ − − − − Max 600 400 0.6 8.0 Unit V V A A repetitive peak off-state voltage MAC97A8 MAC97A6 IT(RMS) ITSM on-state current (RMS value) non-repetitive peak on-state current Symbol Parameter 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDRM repetitive peak off-state voltage MAC97A8 MAC97A6 IT(RMS) ITSM on-state current (RMS value) non-repetitive peak on-state current Tj = 25 to 125 °C Tj = 25 to 125 °C full sine wave; Tlead ≤ 50 °C; Figure 5 full sine wave; Tj = 25 °C prior to surge t = 20 ms t = 16.7 ms I2t dIT/dt I2t for fusing t = 10 ms ITM = 1.0 A; IG = 0.2 A; dIG/dt = 0.2 A/µs T2+ G+ T2+ G− T2− G− T2− G+ IGM VGM PGM PG(AV) Tstg Tj gate current (peak value) gate voltage (peak value) gate power (peak value) average gate power storage temperature operating junction temperature t = 2 µs max t = 2 µs max t = 2 µs max Tcase = 80 °C; t = 2 µs max − − −40 −40 − − − − − 50 50 50 10 1 5 5 0.1 +150 +125 A/µs A/µs A/µs A/µs A V W W °C °C repetitive rate of rise of on-state current after triggering − − − 8.0 8.8 0.32 A A A2s − − − 600 400 0.6 V V A Conditions Min Max Unit 9397 750 07917 © Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 01 — 29 March 2001 2 of 12 Philips Semiconductors MAC97A8; MAC97A6 Logic level triac 7. Thermal characteristics Table 4: Symbol Rth(j-lead) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to lead thermal resistance from junction to ambient Conditions full cycle half cycle mounted on a printed circuit board; lead length = 4 mm; Figure 1 Value 60 80 150 Unit K/W K/W K/W 7.1 Transient thermal impedance 103 Zth(j-a) (K/W) 102 003aaa029 10 P tp t 1 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10 . Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration. 9397 750 07917 © Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 01 — 29 March 2001 3 of 12 Philips Semiconductors MAC97A8; MAC97A6 Logic level triac 8. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified Symbol IGT Parameter gate trigger current Conditions VD = 12 V; IT = 0.1 A; Figure 8 T2+ G+ T2+ G− T2− G− T2− G+ IL latching current VD = 12 V; IGT = 0.1 A; Figure 9 T2+ G+ T2+ G− T2− G− T2− G+ IH VT VGT ID dVD/dt holding current on-state voltage gate trigger voltage off-state leakage current critical rate of rise of off-state voltage VD = 12 V; IGT = 0.1 A; Figure 10 IT = 0.85 A; Figure 11 VD = 12 V; IT = 0.1 A; Figure 7 VD = VDRM; IT = 0.1 A; Tj = 110 °C VD = VDRM (max); Tj = 110 °C VD = 67% of VDM(max); Tcase = 110 °C; exponential waveform; gate open circuit; Figure 12 VD = rated VDRM; Tcase = 50 °C; ITM = 0.84 A; commutating dI/dt = 0.3 A/ms ITM = 1.0 A; VD = VDRM(max); IG = 25 mA; dIG/dt = 5 A/µs Dynamic characteristics 30 45 − V/µs − − − − − − − 0.1 − 1 5 1 2 1 1.4 0.9 0.7 3 10 10 10 10 10 1.9 2 − 100 mA mA mA mA mA V V V µA − − − − 1 2 2 4 5 5 5 7 mA mA mA mA Min Typ Max Unit Static characteristics dVcom/dt critical rate of rise of commutation voltage gate controlled turn-on time − 5 − V/µs tgt − 2 − µs 9397 750 07917 © Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 01 — 29 March 2001 4 of 12 Philips Semiconductors MAC97A8; MAC97A6 Logic level triac 003aaa036 1.2 Ptot 103 ITSM 1 003aaa040 I (W) 1 α = 180 120 T I TSM (A) 102 T time Tj initial = 25 oC max 0.8 90 60 0.6 0.4 30 10 0.2 0 0 0.2 0.4 0.6 IT(RMS) (A) 0.8 1 10-5 10-4 10-3 10-2 10-1 tp (s) α = conduction angle tp ≤ 20 ms Fig 2. Maximum on-state dissipation as a function of RMS on-state current; typical values. Fig 3. Maximum permissible non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; typical values. 10 I ITSM 8 (A) T 003aaa038 1 IT(RMS) (A) 0.8 003aaa037 I TSM T 6 time 0.6 Tj initial = 25 oC max 4 0.4 2 0.2 0 1 10 0 102 n 103 0 20 40 60 80 100 120 140 Tlead (oC) n = number of cycles at f = 50 Hz Fig 4. Maximum permissible non-repetitive peak on-state current as a function of number of cycles for sinusoidal currents; typical values. Fig 5. Maximum permissible RMS current as a function of lead temperature; typical values. 9397 750 07917 © Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 01 — 29 March 2001 5 of 12 Philips Semiconductors MAC97A8; MAC97A6 Logic level triac 3 IT(RMS) (A) 003aaa041 003aaa039 1.6 a 1.4 2.5 1.2 2 1 0.8 0.6 1.5 1 0.4 0.5 0.2 0 -60 0 10-3 10-2 1 tsurge (s) 10 -10 40 90 T (oC) j 140 f = 50 Hz; Tlead ≤ 50 °C V GT ( Tj ) a = ----------------------V ° GT ( 25 C ) Fig 6. Maximum permissible repetitive RMS on-state current as a function of surge duration for sinusoidal currents; typical values. 2.5 a 2 T2+ T2− T2− T2+ G+ G+ G− G− 003aaa030 Fig 7. Normalized gate trigger voltage as a function of junction temperature; typical values. 2.5 a 2 003aaa031 1.5 1.5 1 1 0.5 0.5 0 -60 -20 20 60 100 Tj (oC) 140 0 -60 -20 20 60 100 Tj (oC) 140 I GT ( Tj ) a = --------------------I ° GT ( 25 C ) I L ( Tj ) a = ----------------I ° L ( 25 C ) Fig 8. Normalized gate trigger current as a function of junction temperature; typical values. Fig 9. Normalized latching current as a function of junction temperature; typical values. 9397 750 07917 © Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 01 — 29 March 2001 6 of 12 Philips Semiconductors MAC97A8; MAC97A6 Logic level triac 2.5 a 2 003aaa032 003aaa033 2.0 IT (A) 1.6 Tj = 125 C Tj = 25 oC Typ 1.5 o Max 1.2 1 Max 0.8 0.5 0.4 0 -60 -20 20 60 100 Tj (oC) 140 0 0.5 1 1.5 VT (V) 2 2.0 I H ( Tj ) a = -----------------I ° H ( 25 C ) Fig 10. Normalized holding current as a function of junction temperature; typical values. 103 dVD/dt (V/µs) Fig 11. On-state current as a function of on-state voltage; typical and maximum values. 003aaa034 102 10 1 0 20 40 60 80 100 120 Tj (oC) 140 Fig 12. Critical rate of rise of off-state voltage as a function of junction temperature; typical values. 9397 750 07917 © Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 01 — 29 March 2001 7 of 12 Philips Semiconductors MAC97A8; MAC97A6 Logic level triac 9. Package outline Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 D 2 e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28 A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) 2.5 Fig 13. SOT54 (TO-92). 9397 750 07917 © Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 01 — 29 March 2001 8 of 12 Philips Semiconductors MAC97A8; MAC97A6 Logic level triac 10. Revision history Table 6: 01 Revision history CPCN Description Product specification; initial version Rev Date 20010329 9397 750 07917 © Philips Electronics N.V. 2001. All rights reserved. Product specification Rev. 01 — 29 March 2001 9 of 12 Philips Semiconductors MAC97A8; MAC97A6 Logic level triac 11. Data sheet status Data sheet status [1] Objective data Preliminary data Product status [2] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Product data Production [1] [2] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 12.