Triacs Silicon Bidirectional Thyristors

www.DataSheet4U.com MAC4DSM, MAC4DSN Preferred Device Triacs Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features http://onsemi.com • • • • • • • • Small Size Surface Mount DPAK Package Passivated Die for Reliability and Uniformity Blocking Voltage to 800 V On−State Current Rating of 4.0 Amperes RMS at 108°C Low IGT − 10 mA Maximum in 3 Quadrants High Immunity to dv/dt − 50 V/ms at 125°C Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V • Pb−Free Packages are Available MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC4DSM MAC4DSN On−State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 108°C) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 msec) Peak Gate Power (Pulse Width ≤ 10 msec, TC = 108°C) Average Gate Power (t = 8.3 msec, TC = 108°C) Peak Gate Current (Pulse Width ≤ 10 msec, TC = 108°C) Peak Gate Voltage (Pulse Width ≤ 10 msec, TC = 108°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 600 800 IT(RMS) 4.0 A 1 ITSM 40 A 2 3 Value Unit V 12 3 TRIACS 4.0 AMPERES RMS 600 − 800 VOLTS MT2 G MT1 MARKING DIAGRAMS 4 DPAK CASE 369C STYLE 6 YWW AC 4DSxG 4 DPAK−3 CASE 369D STYLE 6 YWW AC 4DSxG I2t PGM PG(AV) IGM VGM TJ Tstg 6.6 0.5 0.1 0.2 5.0 −40 to 125 −40 to 150 A2sec W W A V °C °C 1 2 3 4 Y WW AC4DSx G = Year = Work Week = Device Code x= M or N = Pb−Free Package PIN ASSIGNMENT Main Terminal 1 Main Terminal 2 Gate Main Terminal 2 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded. © Semiconductor Components Industries, LLC, 2005 1 November, 2005 − Rev. 5 Publication Order Number: MAC4DSM/D MAC4DSM, MAC4DSN THERMAL CHARACTERISTICS Characteristic Thermal Resistance, − Junction−to−Case − Junction−to−Ambient − Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes (Note 3) Symbol RqJC RqJA RqJA TL Max 3.5 88 80 260 Unit °C/W °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) ON CHARACTERISTICS Peak On−State Voltage (Note 4) (ITM = ± 6.0 A) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) Gate Non−Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W) MT2(+), G(+); MT2(+), G(−); MT2(−), G(−) TJ = 125°C Holding Current (VD = 12 V, Gate Open, Initiating Current = ± 200 mA) Latching Current (VD = 12 V, IG = 10 mA) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) DYNAMIC CHARACTERISTICS Characteristic Rate of Change of Commutating Current (VD = 400 V, ITM = 3.5 A, Commutating dv/dt = 10 V/msec, Gate Open, TJ = 125°C, f = 500 Hz, CL = 5.0 mF, LL = 20 mH, No Snubber) See Figure 16 Critical Rate of Rise of Off−State Voltage (VD = 0.67 X Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) Symbol di/dt(c) Min 3.0 Typ 4.0 Max − Unit A/ms VTM IGT 2.9 2.9 2.9 VGT 0.5 0.5 0.5 VGD IH IL − − − 6.0 10 6.0 30 30 30 0.2 2.0 0.7 0.65 0.7 0.4 5.5 1.3 1.3 1.3 − 15 V mA mA 4.0 5.0 7.0 10 10 10 V − 1.3 1.6 V mA TJ = 25°C TJ = 125°C IDRM, IRRM mA − − − − 0.01 2.0 Symbol Min Typ Max Unit dv/dt 50 175 − V/ms 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. 3. 1/8″ from case for 10 seconds. 4. Pulse Test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%. ORDERING INFORMATION Device MAC4DSM−001 MAC4DSM−001G MAC4DSMT4 MAC4DSMT4G MAC4DSN−001 MAC4DSN−001G MAC4DSNT4 MAC4DSNT4G Package Type DPAK−3 DPAK−3 (Pb−Free) DPAK DPAK (Pb−Free) DPAK−3 DPAK−3 (Pb−Free) DPAK DPAK (Pb−Free) Package 369D 369D 369C 369C 369D 369D 369C 369C Shipping † 75 Units / Rail 75 Units / Rail 2500 / Tape & Reel 2500 / Tape & Reel 75 Units / Rail 75 Units / Rail 2500 / Tape & Reel 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MAC4DSM, MAC4DSN Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Quadrant 1 MainTerminal 2 + Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Forward Off−State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off−State Voltage Peak Reverse Blocking Current Maximum On−State Voltage Holding Current Quadrant 3 MainTerminal 2 − IH VTM IRRM at VRRM on state IH VTM off state + Voltage IDRM at VDRM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 (+) MT2 Quadrant II (−) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant I IGT − (−) MT2 (−) MT2 + IGT Quadrant III (−) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant IV − MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 MAC4DSM, MAC4DSN TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) ° 125 P(AV) , AVERAGE POWER DISSIPATION (WATTS) 6.0 180° 5.0 α α dc 120 a = 30° 60° 90° 120° 90° 4.0 3.0 2.0 a = CONDUCTION ANGLE 115 α α 110 a = CONDUCTION ANGLE 120° 180° dc 3.5 4.0 a = 30° 1.0 0 0 1.0 2.0 3.0 60° 105 0 0.5 1.0 1.5 2.0 2.5 3.0 IT(RMS), RMS ON−STATE CURRENT (AMPS) 4.0 IT(RMS), RMS ON−STATE CURRENT (AMPS) Figure 1. RMS Current Derating Figure 2. On−State Power Dissipation IT, INSTANTANEOUS ON−STATE CURRENT (AMPS) TYPICAL @ TJ = 25°C 10 MAXIMUM @ TJ = 125°C r(t) , TRANSIENT RESISTANCE (NORMALIZED) 100 1.0 0.1 ZqJC(t) = RqJC(t)Sr(t) 1.0 MAXIMUM @ TJ = 25°C 0.1 0 1.0 2.0 3.0 4.0 5.0 VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS) 0.01 0.1 1.0 10 100 1000 10 k t, TIME (ms) Figure 3. On−State Characteristics Figure 4. Transient Thermal Response 18 I GT, GATE TRIGGER CURRENT (mA) 16 14 12 10 8.0 6.0 4.0 2.0 0 −50 Q1 VGT, GATE TRIGGER VOLTAGE(VOLTS) Q3 1.0 Q3 Q2 Q1 0.8 Q2 0.6 0.4 0.2 −25 0 25 50 75 100 125 −50 −25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Typical Gate Trigger Current versus Junction Temperature Figure 6. Typical Gate Trigger Voltage versus Junction Temperature http://onsemi.com 4 MAC4DSM, MAC4DSN 14 IH , HOLDING CURRENT (mA) IL, LATCHING CURRENT (mA) 12 10 MT2 NEGATIVE 8.0 6.0 4.0 2.0 0 −50 −25 0 25 50 75 100 125 MT2 POSITIVE 25 Q2 20 Q1 Q3 10 15 5.0 0 −50 −25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Typical Holding Current versus Junction Temperature Figure 8. Typical Latching Current versus Junction Temperature 1000 TJ = 125°C 800 STATIC dv/dt (V/ m s) 600 VPK = 400 V 600 V 200 0 100 1000 RG−MT1, GATE−MT1 RESISTANCE (OHMS) 10 k 800 V 1200 TJ = 125°C 1000 STATIC dv/dt (V/ m s) 800 600 400 200 0 100 1000 RG−MT1, GATE−MT1 RESISTANCE (OHMS) 10 k 600 V VPK = 400 V 400 800 V Figure 9. Exponential Static dv/dt versus Gate−MT1 Resistance, MT2(+) Figure 10. Exponential Static dv/dt versus Gate−MT1 Resistance, MT2(−) 800 GATE OPEN STATIC dv/dt (V/ m s) STATIC dv/dt (V/ m s) 600 TJ = 100°C 400 110°C 125°C 200 2000 1600 TJ = 100°C 1200 110°C 800 125°C GATE OPEN 400 0 400 500 600 700 800 400 500 600 700 800 VPK, PEAK VOLTAGE (VOLTS) VPK, PEAK VOLTAGE (VOLTS) 0 Figure 11. Exponential Static dv/dt versus Peak Voltage, MT2(+) Figure 12. Exponential Static dv/dt versus Peak Voltage, MT2(−) http://onsemi.com 5 MAC4DSM, MAC4DSN 800 GATE OPEN 600 STATIC dv/dt (V/ m s) VPK = 400 V STATIC dv/dt (V/ m s) 1600 1400 1200 1000 800 600 400 800 V 0 100 105 110 115 120 125 TJ, JUNCTION TEMPERATURE (°C) 200 0 100 105 110 115 120 125 TJ, JUNCTION TEMPERATURE (°C) 800 V 600 V VPK = 400 V GATE OPEN 400 600 V 200 Figure 13. Typical Exponential Static dv/dt versus Junction Temperature, MT2(+) Figure 14. Typical Exponential Static dv/dt versus Junction Temperature, MT2(−) 100 dv/dt(c), CRITICAL RATE OF RISE OF COMMUTATING VOLTAGE (V/m s) VPK = 400 V TJ = 125°C 10 100°C 75°C tw VDRM f= 1 2 tw 6f ITM 1000 (di/dt)c = 1.0 0 5.0 10 15 20 di/dt(c), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms) Figure 15. Critical Rate of Rise of Commutating Voltage LL 200 VRMS ADJUST FOR ITM, 60 Hz VAC TRIGGER CHARGE CONTROL TRIGGER CONTROL MEASURE I 1N4007 CHARGE − + MT2 1N914 51 W G MT1 200 V NON-POLAR CL Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information. Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c http://onsemi.com 6 MAC4DSM, MAC4DSN PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O −T− B V R 4 SEATING PLANE C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M