Sensitive Gate Triacs Silicon Bidirectional Thyristors

www.DataSheet4U.com MAC4DHM Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features http://onsemi.com • • • • • • • • Small Size Surface Mount DPAK Package Passivated Die for Reliability and Uniformity Four−Quadrant Triggering Blocking Voltage to 600 V On−State Current Rating of 4.0 A RMS at 93°C Low Level Triggering and Holding Characteristics Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V • Pb−Free Packages are Available MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) On−State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 93°C) Peak Non-Repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 110°C) Circuit Fusing Consideration (t = 8.3 msec) Peak Gate Power (Pulse Width ≤ 10 msec, TC = 93°C) Average Gate Power (t = 8.3 msec, TC = 93°C) Peak Gate Current (Pulse Width ≤ 10 msec, TC = 93°C) Peak Gate Voltage (Pulse Width ≤ 10 msec, TC = 93°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM IT(RMS) ITSM I2t PGM PG(AV) IGM VGM TJ Tstg Value 600 Unit V 1 2 3 TRIACS 4.0 AMPERES RMS 600 VOLTS MT2 G MT1 MARKING DIAGRAMS 4 DPAK CASE 369C STYLE 6 YWW AC 4DHMG 4.0 40 6.6 0.5 0.1 0.2 5.0 −40 to 110 −40 to 150 A A 1 A2sec W W A V 1 °C °C 2 3 4 2 3 4 DPAK−3 CASE 369D STYLE 6 YWW AC 4DHMG Y WW AC4DHM G = = = = Year Work Week Device Code Pb−Free Package PIN ASSIGNMENT Main Terminal 1 Main Terminal 2 Gate Main Terminal 2 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2005 1 November, 2005 − Rev. 5 Publication Order Number: MAC4DHM/D MAC4DHM THERMAL CHARACTERISTICS Characteristic Thermal Resistance, − Junction−to−Case − Junction−to−Ambient − Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes (Note 3) Symbol RqJC RqJA RqJA TL Max 3.5 88 80 260 Unit °C/W °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) ON CHARACTERISTICS Peak On−State Voltage (Note 4) − (ITM = ± 6.0 A) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) MT2(−), G(+) Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) MT2(−), G(+) Gate Non−Trigger Voltage (Continuous dc) − (VD = 12 V, RL = 100 W, TJ = 110°C) All Four Quadrants Holding Current (VD = 12 V, Gate Open, Initiating Current = ± 200 mA) Latching Current MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) MT2(−), G(+) (VD = 12 V, IG = 5.0 mA) (VD = 12 V, IG = 5.0 mA) (VD = 12 V, IG = 5.0 mA) (VD = 12 V, IG = 10 mA) VTM IGT − − − − VGT 0.5 0.5 0.5 0.5 VGD IH IL − − − − 1.75 5.2 2.1 2.2 10 10 10 10 0.1 − 0.62 0.57 0.65 0.74 0.4 1.5 1.3 1.3 1.3 1.3 − 15 V mA mA 1.8 2.1 2.4 4.2 5.0 5.0 5.0 10 V − 1.3 1.6 V mA TJ = 25°C TJ = 110°C IDRM, IRRM mA − − − − 0.01 2.0 Symbol Min Typ Max Unit DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current (VD = 200 V, ITM = 1.8 A, Commutating dv/dt = 1.0 V/msec, TJ = 110°C, f = 250 Hz, CL = 5.0 mfd, LL = 80 mH, RS = 56 W, CS = 0.03 mfd) With snubber see Figure 11 Critical Rate of Rise of Off−State Voltage (VD = 0.67 X Rated VDRM, Exponential Waveform, Gate Open, TJ = 110°C) di/dt(c) − 3.0 − A/ms dv/dt 20 − − V/ms 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. 3. 1/8″ from case for 10 seconds. 4. Pulse Test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%. ORDERING INFORMATION Device MAC4DHM−001 MAC4DHM−001G MAC4DHMT4 MAC4DHMT4G Package Type DPAK−3 DPAK−3 (Pb−Free) DPAK DPAK (Pb−Free) Package 369D 369D 369C 369C Shipping † 75 Units / Rail 75 Units / Rail 2500 / Tape & Reel 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MAC4DHM Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Quadrant 1 MainTerminal 2 + Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Forward Off−State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off−State Voltage Peak Reverse Blocking Current Maximum On−State Voltage Holding Current Quadrant 3 MainTerminal 2 − IH VTM IRRM at VRRM on state IH VTM off state + Voltage IDRM at VDRM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 (+) MT2 Quadrant II (−) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant I IGT − (−) MT2 (−) MT2 + IGT Quadrant III (−) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant IV − MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 MAC4DHM ° TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) 110 P(AV) , AVERAGE POWER DISSIPATION (WATTS) 6.0 180° 5.0 α 4.0 3.0 2.0 a = 30° 1.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 IT(RMS), RMS ON−STATE CURRENT (AMPS) 60° α 90° 120° dc 105 a = 30° 60° 90° a = CONDUCTION ANGLE 100 α 95 α 120° 180° 90 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IT(RMS), RMS ON−STATE CURRENT (AMPS) a = CONDUCTION ANGLE dc 4.0 Figure 1. RMS Current Derating Figure 2. On−State Power Dissipation I T, INSTANTANEOUS ON−STATE CURRENT (AMPS) TYPICAL @ TJ = 25°C 10 MAXIMUM @ TJ = 110°C r(t) , TRANSIENT RESISTANCE (NORMALIZED) 100 1.0 0.1 ZqJC(t) = RqJC(t)Sr(t) 1.0 MAXIMUM @ TJ = 25°C 0.1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS) 0.01 0.1 1.0 10 100 1000 10 K t, TIME (ms) Figure 3. On−State Characteristics Figure 4. Transient Thermal Response 8.0 VGT, GATE TRIGGER VOLTAGE (VOLTS) I GT, GATE TRIGGER CURRENT (mA) 7.0 6.0 5.0 4.0 Q2 3.0 Q1 2.0 1.0 0 −40 −25 −10 5.0 20 35 50 65 80 95 110 Q3 Q4 1.0 Q4 Q1 0.8 Q2 0.6 Q3 0.4 0.2 −40 −25 −10 5.0 20 35 50 65 80 95 110 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Typical Gate Trigger Current versus Junction Temperature Figure 6. Typical Gate Trigger Voltage versus Junction Temperature http://onsemi.com 4 MAC4DHM 5.0 IH , HOLDING CURRENT (mA) IL, LATCHING CURRENT (mA) 12 10 8.0 6.0 4.0 4.0 3.0 MT2 NEGATIVE 2.0 MT2 POSITIVE 1.0 0 −40 −25 Q2 Q4 Q3 −10 5.0 20 35 50 65 80 95 110 2.0 Q1 0 −10 5.0 20 35 50 65 80 95 110 −40 −25 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Typical Holding Current versus Junction Temperature Figure 8. Typical Latching Current versus Junction Temperature 40 35 STATIC dv/dt (V/ m s) 30 25 20 15 10 5 100 1000 GATE−MT1 RESISTANCE (OHMS) 10 K MAC4DHM dv/dt(c), CRITICAL RATE OF RISE OF COMMUTATING VOLTAGE (V/m s) VD = 400 V TJ = 110°C 10 VPK = 400 V TJ = 110°C 100°C 90°C 1.0 tw VDRM f= 1 2 tw 6f ITM 1000 (di/dt)c = 0.1 0 1.0 2.0 3.0 4.0 5.0 6.0 di/dt(c), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms) Figure 9. Minimum Exponential Static dv/dt versus Gate−MT1 Resistance Figure 10. Typical Critical Rate of Rise of Commutating Voltage LL 200 VRMS ADJUST FOR ITM, 60 Hz VAC TRIGGER CHARGE CONTROL TRIGGER CONTROL MEASURE I RS 1N4007 CHARGE − CS MT2 1N914 51 W G MT1 ADJUST FOR + di/dt(c) 200 V NON-POLAR CL Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information. Figure 11. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c http://onsemi.com 5 MAC4DHM PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O −T− B V R 4 SEATING PLANE C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− A S 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) T DIM A B C D E F G H J K L R S U V Z M STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118 SCALE 3:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 MAC4DHM PACKAGE DIMENSIONS DPAK−3 CASE 369D−01 ISSUE B B V R 4 C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0