(MAC210A8 / MAC210A10) Triacs Silicon Bidirectional Thyristors

www.DataSheet4U.com MAC210A8, MAC210A10 Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full−wave silicon gate controlled solid−state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied main terminal voltage with positive or negative gate triggering. Features http://onsemi.com • Blocking Voltage to 600 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Gate Triggering Guaranteed in Four Modes (Quadrants) • Pb−Free Packages are Available* MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to +125°C, Sine Wave 50 to 60 Hz, Gate Open) MAC210A8 MAC210A10 On−State RMS Current (TC = +70°C) Full Cycle Sine Wave 50 to 60 Hz Peak Non−Repetitive Surge Current (One Full Cycle, Sine Wave 60 Hz, TC = +25°C) Preceded and followed by rated current Circuit Fusing Considerations, (t = 8.3 ms) Peak Gate Power (TC = +70°C, Pulse Width = 10 ms) Average Gate Power (TC = +70°C, t = 8.3 ms) Peak Gate Current (TC = +70°C, Pulse Width = 10 ms) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 600 800 IT(RMS) ITSM 10 100 A 1 A 2 3 Value Unit V TRIACS 10 AMPERES RMS 600 thru 800 VOLTS MT2 G MT1 Uniformity and Stability MARKING DIAGRAM MAC210AxG AYWW TO−220AB CASE 221A−07 STYLE 4 x A Y WW G = 8 or 10 = Assembly Location = Year = Work Week = Pb−Free Package I2t PGM PG(AV) IGM TJ Tstg 40 20 0.35 2.0 −40 to +125 −40 to +150 A2s W W A 1 °C °C 2 3 4 PIN ASSIGNMENT Main Terminal 1 Main Terminal 2 Gate Main Terminal 2 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. ORDERING INFORMATION Device MAC210A8 MAC210A8G MAC210A10 Package TO−220AB TO−220AB (Pb−Free) TO−220AB TO−220AB (Pb−Free) Shipping 500 Units/Box 500 Units/Box 500 Units/Box 500 Units/Box *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 MAC210A10G 1 December, 2005 − Rev. 2 Publication Order Number: MAC210A8/D MAC210A8, MAC210A10 THERMAL CHARACTERISTICS Characteristic Thermal Resistance − Junction−to−Case − Junction−to−Ambient Symbol RqJC RqJA TL Value 2.0 62.5 260 Unit °C/W °C Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) ON CHARACTERISTICS Peak On-State Voltage (ITM = "14 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%) Gate Trigger Current (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) MT2(−), G(+) Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 100 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) MT2(−), G(+) Gate Non−Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 V, RL = 100 W, TJ = +125°C) All Four Quadrants Holding Current (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = "200 mA, TC = +25°C) Turn-On Time (Rated VDRM, ITM = 14 A) (IGT = 120 mA, Rise Time = 0.1 ms, Pulse Width = 2 ms) DYNAMIC CHARACTERISTICS Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 14 A, Commutating di/dt = 5.0 A/ms, Gate Unenergized, TC = 70°C) Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TC = +70°C) dv/dt(c) − 5.0 − V/ms VTM IGT − − − − VGT − − − − VGD IH 0.2 − 0.9 0.9 1.1 1.4 − 6.0 2.0 2.0 2.0 2.5 − 50 V mA 12 12 20 35 50 50 50 75 V − 1.2 1.65 V mA TJ = 25°C TJ = +125°C IDRM, IRRM − − − − 10 2.0 mA mA Symbol Min Typ Max Unit tgt − 1.5 − ms dv/dt − 100 − V/ms http://onsemi.com 2 MAC210A8, MAC210A10 Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Quadrant 1 MainTerminal 2 + Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Holding Current Quadrant 3 MainTerminal 2 − IH VTM IRRM at VRRM on state IH VTM off state + Voltage IDRM at VDRM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 (+) MT2 Quadrant II (−) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant I IGT − (−) MT2 (−) MT2 + IGT Quadrant III (−) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant IV − MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 MAC210A8, MAC210A10 TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (° C) P (AV) , AVERAGE POWER DISSIPATION 130 CONDUCTION ANGLE = 360° 120 110 100 90 80 70 60 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 IT(RMS), RMS ON-STATE CURRENT (AMPS) 9.0 10.0 14.0 CONDUCTION ANGLE = 360° 12.0 10.0 8.0 6.0 4.0 2.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 IT(RMS), RMS ON-STATE CURRENT (AMPS) 9.0 10.0 Figure 1. Current Derating Figure 2. Power Dissipation 100 IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) 50 100 ITSM , PEAK SURGE CURRENT (AMP) 80 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) TJ = 25°C TJ = 125°C 60 40 20 CYCLE TC = 70°C f = 60 Hz Surge is preceded and followed by rated current 2.0 3.0 NUMBER OF CYCLES 5.0 7.0 10 0 1.0 Figure 4. Maximum Non−Repetitive Surge Current VGT , GATE TRIGGER VOLTAGE (NORMALIZED) 2.0 OFF-STATE VOLTAGE = 12 Vdc ALL MODES 1.6 Figure 3. Maximum On−State Characteristics 1.2 0.8 0.4 0 −60 −40 0 40 −20 20 TC, CASE TEMPERATURE (°C) 60 80 Figure 5. Typical Gate Trigger Voltage http://onsemi.com 4 MAC210A8, MAC210A10 I GT, GATE TRIGGER CURRENT (NORMALIZED) 2.0 IH , HOLDING CURRENT (NORMALIZED) OFF-STATE VOLTAGE = 12 Vdc ALL MODES 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 −60 OFF-STATE VOLTAGE = 12 Vdc ALL MODES 1.6 1.2 0.8 0.4 0 −60 −40 −20 0 20 40 60 80 −40 −20 0 20 40 60 80 TC, CASE TEMPERATURE (°C) TC, CASE TEMPERATURE (°C) Figure 6. Typical Gate Trigger Current r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 7. Typical Holding Current 1.0 0.5 0.2 ZqJC(t) = r(t) • RqJC 0.1 0.05 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k t, TIME (ms) Figure 8. Thermal Response http://onsemi.com 5 MAC210A8, MAC210A10 PACKAGE DIMENSIONS TO−220AB CASE 221A−07 ISSUE AA −T− B F C S SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 T 4 Q 1 2 3 A U K H Z L V G D N J R STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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