Amplifier

Amplifier, Power, 20W 7.5-10.5 GHz Features ♦ ♦ ♦ ♦ ♦ MAAPGM0079-DIE Rev A Preliminary Datasheet 17 Watt Saturated Output Power Level 20 Watt Saturated Output Power Level over 8-10 GHz Band Variable Drain Voltage (8-10V) Operation MSAG™ Process Robust Stability Description The MAAPGM0079-DIE is a 3 stage 20W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG)Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM’s MSAG process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Primary Applications ♦ SatCom ♦ Commercial Avionics ♦ Radar www.DataSheet4U.com Also Available in: Description Part Number Ceramic Package MAAP-000079-PKG001 Sample Board (Die) MAAP-000079-SMB004 Sample Board (Pkg) MAAP-000079-SMB001 Mechanical Sample (Die) MAAP-000079-MCH000 Electrical Characteristics: T B = 40°C1, Z0 = 50 Ω, VDD = 10V, IDQ = 4A2, Pin = 18 dBm, Rg = 20 Ω Parameter Bandwidth Output Power Output Power, 8-10 GHz 1-dB Compression Point Small Signal Gain Power Added Efficiency Input VSWR Output VSWR Gate Current Drain Current, under RF Drive Output Third Order Intercept Output Third Order Intermod, Pout = 39 dBm (DCL) 1. 2. Symbol f POUT POUT P1dB G PAE VSWR VSWR IGG IDD TOI IM3 Typical 7.5-10.5 42 43 42 29 30 2.5:1 2.5:1 50 6 48 18.5 mA A dBm dBc Units GHz dBm dBm dBm dB % 1 TB = MMIC Base Temperature Adjust VGG between –2.6 and –1.5V to achieve specified Idq. M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 20W 7.5-10.5 GHz Maximum Ratings3 Parameter Input Power Drain Supply Voltage Gate Supply Voltage Quiescent Drain Current (No RF) Quiescent DC Power Dissipated (No RF) Junction Temperature Storage Temperature Symbol PIN VDD VGG IDQ PDISS TJ TSTG Absolute Maximum 23 +12.0 -3.0 6.6 65.8 170 -55 to +150 MAAPGM0079-DIE Rev A Preliminary Datasheet Units dBm V V A W °C °C 3. Operation beyond these limits may result in permanent damage to the part. Recommended Operating Conditions4 Characteristic Drain Voltage Gate Voltage Input Power Thermal Resistance MMIC Base Temperature Symbol VDD VGG PIN ΘJC TB Min 4.0 -2.6 Typ 10.0 -2.2 18.0 2.2 Note 5 Max 10.0 -1.5 21.0 Unit V V dBm °C/W °C 4. Operation outside of these ranges may reduce product reliability. 5. MMIC Base Temperature = 170°C — ΘJC* VDD * I DQ Power Derating Curve, Quiescent (No RF) 70 60 Peak Power Dissipation (W) 50 Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG = -2.7 V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 10.0 V. 3. Adjust VGG to set IDQ, (approximately @ –2.2 V). 4. Set RF input. 40 30 20 10 0 0 20 40 60 80 100 120 140 160 180 5. Power down sequence in reverse. Turn VGG off last. 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. MMIC Base Temperature (ºC) • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 20W 7.5-10.5 GHz MAAPGM0079-DIE Rev A Preliminary Datasheet All Data is at 40ºC MMIC base temperature, CW stimulus, unless otherwise noted. 50 48 46 44 50 46 42 38 50 48 46 Output Power (dBm) 44 42 40 38 36 34 32 30 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 VDS=10V VDS=8V POUT (dBm) 40 38 POUT 36 34 32 30 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 PAE 30 26 22 18 14 10 11.0 PAE (%) 42 34 Frequency (GHz) Figure 1. Output Power and Power Added Efficiency vs. Frequency at V DD = 10V and P in = 18 dBm Frequency (GHz) Figure 2. 1dB Compression Point vs. Drain Voltage 50 48 46 44 45 42 39 40 37 34 Gain @ 10V Input VSWR Output VSWR 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 7 7.5 8 8.5 9 9.5 10 10.5 11 PAE (%) 42 40 38 36 PO UT : VDS=10V POUT : VDS=8V PAE : VDS=8V 33 30 27 24 PAE : VDS=10V Relative Gain (dB) 36 31 28 25 22 19 16 13 10 POUT (dBm) 34 32 30 7.0 7.5 8.0 21 18 15 11.0 8.5 9.0 9.5 10.0 10.5 Frequency (GHz) Figure 3. Saturated Output Power and Power Added Efficiency vs. Frequency and Drain Voltage Frequency (GHz) Figure 4. Small Signal Gain and Input and Output VSWR vs. Frequency. 45 43 7.0 6.8 6.6 50 Pout (dBm), Gain (dB), PAE (%) 41 39 37 35 33 31 29 27 25 30 40 50 60 70 80 90 100 110 120 130 140 45 Output Power (dBm) 6.4 6.2 6.0 5.8 5.6 40 Current (A) 35 7.5 GHz 30 9.5 GHz 8.5 GHz 10.5 GHz Pout SSG PAE IDS 5.4 25 5.2 5.0 150 20 2 4 6 8 10 12 14 16 18 20 22 Junction Temperature (ºC) Input Power (dBm) Figure 6. Output Power vs. Input Power at VDD = 10V Fig 5. Output Power, Power Added Efficiency, and Drain Current vs. Junction Temperature at VD=10V, f=9GHz, and Pin=18dBm. 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. VSWR Amplifier, Power, 20W 7.5-10.5 GHz MAAPGM0079-DIE Rev A Preliminary Datasheet All Data is at 40ºC MMIC base temperature, CW stimulus, unless otherwise noted. 40 8 7.5 GHz 8.5 GHz 9.5 GHz 10.5 GHz 35 30 7 6 5 25 PAE (%) 20 IDS (A) 4 3 2 1 0 2 4 6 8 10 12 14 16 18 20 22 7.5 GHz 9.5 GHz 8.5 GHz 10.5 GHz 15 10 5 0 -2 0 2 4 6 8 10 12 14 16 18 20 22 24 Input Power (dBm) Input Power (dBm) Figure 8. Drain Current vs. Input Power at V DD = 10V 35 33 31 Fig 7. Power Added Efficiency vs. Input Power at VD=10V. 35 33 31 Relative Gain (dB) 7.5 GHz 9.0 GHz 10.5 GHz Relative Gain (dB) 29 27 25 23 21 19 17 15 25 27 29 31 33 35 37 39 41 43 45 29 27 25 23 21 19 17 15 25 27 29 31 33 35 37 39 41 43 45 7.5 GHz 9.0 GHz 10.5 GHz Output Power (dBm) Output Power (dBm) Figure 9. Relative Gain vs. Output Pow er by Frequency at VD =8V and 25% IDSS Figure 10. Relative Gain vs. Output Power by Frequency at VD=10V and 25% IDSS 60 58 56 54 8 GHz 9 GHz 10 GHz 100 90 80 70 8 GHz 9 GHz 10 GHz TOI (dBm) 50 48 46 44 42 40 12 14 16 18 20 22 24 26 28 30 32 34 36 38 IMD3 (dBc) 52 60 50 40 30 20 10 0 12 14 16 18 20 22 24 26 28 30 32 34 36 38 Fundamental Output Power, Single Tone (dBm) Figure 11. Third Order Intercept vs. Output Power and Frequency at 8V. Fundamental Output Power per Tone (dBm) Figure 12. Third Order Intermod vs. Output Power and Frequency at 8V. 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 20W 7.5-10.5 GHz 60 58 56 54 8 GHz 9 GHz 10 GHz MAAPGM0079-DIE Rev A Preliminary Datasheet All Data is at 40ºC MMIC base temperature, CW stimulus, unless otherwise noted. 100 90 80 70 8 GHz 9 GHz 10 GHz IMD3 (dBc) 12 14 16 18 20 22 24 26 28 30 32 34 36 38 TOI (dBm) 52 50 48 46 44 42 40 60 50 40 30 20 10 0 12 14 16 18 20 22 24 26 28 30 32 34 36 38 Fundamental Output Power, Single Tone (dBm) Figure 13. Third Order Intercept vs. Output Power and Frequency at 10V. Fundamental Output Power per Tone (dBm) Figure 14. Third Order Intermod vs. Output Power and Frequency at 10V. 60 58 56 54 8 GHz 9 GHz 10 GHz 60 55 50 45 8 GHz 9 GHz 10 GHz TOI (dBm) 52 50 48 46 44 42 40 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 IMD3 (dBc) 40 35 30 25 20 15 10 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 MMIC Base Temperature (ºC) Figure 15. Third Order Intercept vs. Temperature and Frequency at 10V and Pout = 39 dBm DCL. MMIC Base Te